AOS Semiconductor Product Reliability Report AOI4126, rev A 100V N-Channel MOSFET SDMOS TM ALPHA & OMEGA Semiconductor, Inc www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOI4126. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOI4126 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation I. Product Description: The AOI4126 are fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge. The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. -RoHS Compliant -Halogen Free Detailed refer to the datasheet. II. Die / Package Information: Process Package Type Lead Frame Die Attach Bonding Mold Material Moisture Level AOI4126 Standard sub-micron Middle voltage N channel process TO251A Bare Cu Soft solder Al wire Epoxy resin with silica filler Up to Level 1 * Note * based on info provided by assembler and mold compound supplier 2 III. Result of Reliability Stress for AOI4126 Test Item Test Condition Time Point Solder Reflow Precondition HTGB 168hr 85°°c /85%RH +3 cycle reflow@260°°c HTRB HAST Pressure Pot Temperature Cycle Lot Attribution Total Sample size - 3 lots 495pcs 0 JESD22A113 Temp = 150°°c , Vgs=100% of Vgsmax 168hrs 500 hrs 1000 hrs 1 lot 231pcs 0 JESD22A108 Temp = 150°°c , Vds=80% of Vdsmax 168hrs 500 hrs 1000 hrs 77pcs / lot 231pcs 0 JESD22A108 130 +/- 2°°c , 85%RH, 33.3 psi, Vgs = 100% of Vgs max 121°°c , 29.7psi, RH=100% 100 hrs (Note A) 3 lots 77pcs / lot 165pcs 0 JESD22A110 96 hrs (Note A*) 3 lots 55 pcs / lot 165pcs 0 JESD22A102 (Note A*) 55 pcs / lot 0 JESD22A104 -65°°c to 150°°c , air to air Number of Failures Standard 2 lots (Note A) 1 lot 2 lots 250 / 500 cycles 3 lots (Note A*) 165pcs 55 pcs / lot Note A: The reliability data presents total of available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 11 MTTF = 10747 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion device hours. 2 9 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 1.83 x 10 9 7 MTTF = 10 / FIT = 9.41 x 10 hrs = 10747 years / [2x (2x77x168+4x77x1000) x (258)] = 11 Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s )] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10 -5eV / K 3