Datasheet

AOK2500L
150V N-Channel MOSFET
General Description
Product Summary
VDS
• Trench Power MV MOSFET technology
• Low RDS(ON)
• Low Gate Charge
• Optimized for fast-switching applications
Applications
ID (at VGS=10V)
150V
180A
RDS(ON) (at VGS=10V)
< 6.2mΩ
RDS(ON) (at VGS=6V)
< 7.3mΩ
100% UIS Tested
100% Rg Tested
• Synchronous Rectification in DC/DC and AC/DC Converters
• Industrial and Motor Drive applications
Top View
D
TO-247
G
S
S
D
G
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOK2500L
TO-247
Tube
240
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
Avalanche energy
VDS Spike
L=0.3mH
C
10µs
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1. 0: September 2014
IAS
65
A
EAS
634
mJ
VSPIKE
180
V
500
Steady-State
Steady-State
W
250
3.1
W
2.0
TJ, TSTG
Symbol
t ≤ 10s
A
11
PDSM
Junction and Storage Temperature Range
A
14
PD
TA=25°C
V
440
IDSM
TA=70°C
±20
127
IDM
TA=25°C
Continuous Drain
Current
Units
V
180
ID
TC=100°C
C
Maximum
150
RθJA
RθJC
-55 to 175
Typ
5
30
0.22
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°C
Max
8
40
0.3
Units
°C/W
°C/W
°C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
150
Typ
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
1
TJ=55°C
2.3
±100
nA
2.8
3.5
V
5.1
6.2
9.7
11.8
7.3
RDS(ON)
Static Drain-Source On-Resistance
VGS=6V, ID=20A
5.6
gFS
Forward Transconductance
VDS=5V, ID=20A
70
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
TJ=125°C
0.66
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=75V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg(10V)
Qgs
Gate Source Charge
Qgd
VGS=10V, VDS=75V, ID=20A
µA
5
VGS=10V, ID=20A
Coss
Units
V
VDS=150V, VGS=0V
IDSS
Max
1.0
mΩ
mΩ
S
1
V
180
A
6460
pF
586
pF
22
pF
2.1
3.2
Ω
97
136
nC
22.5
nC
Gate Drain Charge
17
nC
tD(on)
Turn-On DelayTime
18.5
ns
tr
Turn-On Rise Time
20
ns
VGS=10V, VDS=75V, RL=3.75Ω,
RGEN=3Ω
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
67.5
ns
14
ns
90
ns
nC
1090
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1. 0: September 2014
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10V
100
5V
80
VDS=5V
80
6V
60
4.5V
ID(A)
ID (A)
60
40
125°C
40
20
25°C
20
VGS=4V
0
0
0
1
2
3
4
2
5
3
4
5
6
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
8
2.6
Normalized On-Resistance
2.4
RDS(ON) (mΩ)
VGS=6V
6
VGS=10V
4
2.2
VGS=10V
ID=20A
2
1.8
1.6
1.4
VGS=6V
ID=20A
1.2
1
0.8
2
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
15
1.0E+02
ID=20A
1.0E+01
12
9
125°C
IS (A)
RDS(ON) (mΩ)
1.0E+00
1.0E-01
125°C
25°C
1.0E-02
6
1.0E-03
25°C
3
1.0E-04
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1. 0: September 2014
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
10000
VDS=75V
ID=20A
8000
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
6000
4000
2000
Coss
Crss
0
0
0
20
40
60
80
100
0
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
50
75
100
2000
TJ(Max)=175°C
TC=25°C
10µs
10µs
100µs
RDS(ON)
limited
1500
Power (W)
100.0
ID (Amps)
150
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
1ms
10ms
10.0
DC
1.0
0.1
125
500
TJ(Max)=175°C
TC=25°C
0.0
0.01
1000
0.1
1
10
100
1000
VDS (Volts)
VGS> or equal to 6V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0
0.0001 0.001 0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.3°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1. 0: September 2014
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Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
600
200
500
Power Dissipation (W)
150
Current rating ID(A)
400
300
200
100
50
100
0
0
0
25
50
75
100
125
150
175
0
TCASE (°C)
Figure 12: Power De-rating (Note F)
25
50
75
100
125
150
175
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
0.1
0.01
PD
0.001
Single Pulse
0.0001
0.0001
0.001
0.01
0.1
Ton
1
10
T
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1. 0: September 2014
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1. 0: September 2014
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6