AOK2500L 150V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Applications ID (at VGS=10V) 150V 180A RDS(ON) (at VGS=10V) < 6.2mΩ RDS(ON) (at VGS=6V) < 7.3mΩ 100% UIS Tested 100% Rg Tested • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications Top View D TO-247 G S S D G Orderable Part Number Package Type Form Minimum Order Quantity AOK2500L TO-247 Tube 240 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Avalanche Current C Avalanche energy VDS Spike L=0.3mH C 10µs TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1. 0: September 2014 IAS 65 A EAS 634 mJ VSPIKE 180 V 500 Steady-State Steady-State W 250 3.1 W 2.0 TJ, TSTG Symbol t ≤ 10s A 11 PDSM Junction and Storage Temperature Range A 14 PD TA=25°C V 440 IDSM TA=70°C ±20 127 IDM TA=25°C Continuous Drain Current Units V 180 ID TC=100°C C Maximum 150 RθJA RθJC -55 to 175 Typ 5 30 0.22 www.aosmd.com °C Max 8 40 0.3 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 150 Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1 TJ=55°C 2.3 ±100 nA 2.8 3.5 V 5.1 6.2 9.7 11.8 7.3 RDS(ON) Static Drain-Source On-Resistance VGS=6V, ID=20A 5.6 gFS Forward Transconductance VDS=5V, ID=20A 70 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C 0.66 DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=75V, f=1MHz f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg(10V) Qgs Gate Source Charge Qgd VGS=10V, VDS=75V, ID=20A µA 5 VGS=10V, ID=20A Coss Units V VDS=150V, VGS=0V IDSS Max 1.0 mΩ mΩ S 1 V 180 A 6460 pF 586 pF 22 pF 2.1 3.2 Ω 97 136 nC 22.5 nC Gate Drain Charge 17 nC tD(on) Turn-On DelayTime 18.5 ns tr Turn-On Rise Time 20 ns VGS=10V, VDS=75V, RL=3.75Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 67.5 ns 14 ns 90 ns nC 1090 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1. 0: September 2014 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 10V 100 5V 80 VDS=5V 80 6V 60 4.5V ID(A) ID (A) 60 40 125°C 40 20 25°C 20 VGS=4V 0 0 0 1 2 3 4 2 5 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 8 2.6 Normalized On-Resistance 2.4 RDS(ON) (mΩ) VGS=6V 6 VGS=10V 4 2.2 VGS=10V ID=20A 2 1.8 1.6 1.4 VGS=6V ID=20A 1.2 1 0.8 2 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 15 1.0E+02 ID=20A 1.0E+01 12 9 125°C IS (A) RDS(ON) (mΩ) 1.0E+00 1.0E-01 125°C 25°C 1.0E-02 6 1.0E-03 25°C 3 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1. 0: September 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 10000 VDS=75V ID=20A 8000 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 6000 4000 2000 Coss Crss 0 0 0 20 40 60 80 100 0 25 Qg (nC) Figure 7: Gate-Charge Characteristics 50 75 100 2000 TJ(Max)=175°C TC=25°C 10µs 10µs 100µs RDS(ON) limited 1500 Power (W) 100.0 ID (Amps) 150 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 1ms 10ms 10.0 DC 1.0 0.1 125 500 TJ(Max)=175°C TC=25°C 0.0 0.01 1000 0.1 1 10 100 1000 VDS (Volts) VGS> or equal to 6V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.3°C/W 1 0.1 PD Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1. 0: September 2014 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 200 500 Power Dissipation (W) 150 Current rating ID(A) 400 300 200 100 50 100 0 0 0 25 50 75 100 125 150 175 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 0.1 0.01 PD 0.001 Single Pulse 0.0001 0.0001 0.001 0.01 0.1 Ton 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1. 0: September 2014 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1. 0: September 2014 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6