Datasheet

AON7516
30V N-Channel AlphaMOS
General Description
Product Summary
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
VDS
RDS(ON) (at VGS=10V)
< 4.5mΩ
RDS(ON) (at VGS = 4.5V)
< 6.8mΩ
100% UIS Tested
100% Rg Tested
DFN 3x3 EP
Bottom View
Top View
30V
30A
ID (at VGS=10V)
D
Top View
1
8
2
7
3
6
4
5
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
CurrentG
Pulsed Drain Current
Continuous Drain
Current
C
V
A
80
20
IDSM
TA=70°C
±20
23
IDM
TA=25°C
Units
V
30
ID
TC=100°C
Maximum
30
A
16
Avalanche Current C
IAS
34
A
Avalanche energy L=0.05mH C
EAS
29
mJ
VDS Spike
VSPIKE
36
V
Power Dissipation B
100ns
TC=25°C
PD
TC=100°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev0: Oct 2011
3.1
Steady-State
Steady-State
RθJA
RθJC
W
2
TJ, TSTG
Symbol
t ≤ 10s
W
10
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
25
-55 to 150
Typ
30
60
4.2
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°C
Max
40
75
5
Units
°C/W
°C/W
°C/W
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AON7516
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
tD(on)
VGS=10V, VDS=15V, ID=20A
µA
5
1.2
0.8
Units
V
1
TJ=55°C
IGSS
Max
30
VDS=30V, VGS=0V
VGS(th)
Coss
Typ
1.8
100
nA
2.2
V
3.7
4.5
5.3
6.5
5.3
6.8
83
0.7
mΩ
mΩ
S
1
V
30
A
1229
pF
526
pF
83
pF
1.7
2.6
Ω
24
33
nC
12
17
nC
4
nC
Gate Drain Charge
5.5
nC
Turn-On DelayTime
7.0
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
4.8
ns
24.0
ns
tf
Turn-Off Fall Time
5.8
ns
trr
Body Diode Reverse Recovery Time
Qrr
IF=20A, dI/dt=500A/µs
12.6
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
15.2
ns
nC
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Oct 2011
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Page 2 of 6
AON7516
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
4.5V
6V
80
VDS=5V
80
8V
4V
60
ID(A)
ID (A)
60
3.5V
40
40
20
20
125°C
25°C
VGS=3V
0
0
0
1
2
3
4
0
5
10
2
3
4
5
6
Normalized On-Resistance
1.8
8
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
6
4
VGS=10V
2
0
1.6
VGS=10V
ID=20A
1.4
17
5
2
10
=4.5V
1.2
VGS
ID=20A
1
0.8
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
12
1.0E+02
ID=20A
1.0E+01
40
9
125°C
IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
6
1.0E-02
3
125°C
1.0E-01
25°C
1.0E-03
25°C
1.0E-04
0
1.0E-05
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev0: Oct 2011
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON7516
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1600
Ciss
1200
Capacitance (pF)
VGS (Volts)
1400
VDS=15V
ID=20A
8
6
4
1000
800
600
Coss
400
2
200
0
0
5
10
15
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
25
0
5
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
25
150
1000.0
RDS(ON)
10µs
10.0
100µs
DC
1.0
1ms
Power (W)
10µs
100.0
ID (Amps)
Crss
0
TJ(Max)=150°C
TC=25°C
100
50
TJ(Max)=150°C
TC=25°C
0.1
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=5°C/W
PD
0.1
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev0: Oct 2011
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Page 4 of 6
AON7516
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
Current rating ID(A)
Power Dissipation (W)
30
20
10
30
20
10
0
0
0
25
50
75
100
125
TCASE (°
°C)
Figure 12: Power De-rating (Note F)
150
0
25
50
75
100
125
TCASE (°
°C)
Figure 13: Current De-rating (Note F)
150
10000
TA=25°C
Power (W)
1000
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=75°C/W
0.1
PD
Single Pulse
0.01
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev0: Oct 2011
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Page 5 of 6
AON7516
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev0: Oct 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6