UNISONIC TECHNOLOGIES CO., LTD BSS84ZDW Preliminary Power MOSFET 0.13A, 50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION These P-Channel enhancement mode field vertical D-MOS transistors are in a SOT-363 SMD package, and in most applications they require up to 0.13A DC and can deliver current up to 0.52A. This product is particularly suited to low voltage applications requiring a low current high side switch. FEATURES * RDS(ON) < 10Ω @ VGS=-4.5V, ID=-0.1A SYMBOL ORDERING INFORMATION Ordering Number Package BSS84ZDWG-AL6-R SOT-363 1 S1 Pin Assignment 2 3 4 5 G1 D2 S2 G2 6 D1 Packing Tape Reel MARKING 6 5 4 S84G 1 2 3 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-896.b BSS84ZDW Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT -50 V ±20 V DC -0.13 Continuous Drain Current ID A Pulse -0.52 Power Dissipation PD 0.36 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient SYMBOL VDSS VGSS SYMBOL θJA RATINGS 350 UNIT °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250µA Zero Gate Voltage Drain Current IDSS VDS=-50V, VGS=0V Gate–Body Leakage, Forward IGSS VDS=0V, VGS=±20V ON CHARACTERISTICS (Note) Gate-Threshold Voltage VGS(TH) VDS=VGS, ID=-1m A Static Drain–Source On–Resistance RDS(ON) VGS=-4.5V, ID=-0.1A On-State Drain Current ID(ON) VGS=-10 V, VDS=-5V Forward Transconductance gFS VDS=-25V, ID=-0.1A DYNAMIC PARAMETERS Input Capacitance CISS VDS=-25V, VGS=0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS (Note) Total Gate Charge QG VDS=-30V, VGS=-10V, Gate Source Charge QGS ID=-0.1A Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=-30V, ID=-0.1A,VGS=-10V, RG=6Ω, Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS= 0V, IS=-0.13A (Note) Max. Diode Forward Current IS Pulsed Drain-Source Current ISm Note: Pulse test, pulse width ≤ 300us, duty cycle≤ 2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -50 -15 ±10 -0.8 -0.6 0.05 -1.7 1.2 0.6 V Ω A S 73 10 5 pF pF pF 0.9 0.2 0.3 2.5 6.3 10 4.8 -0.8 -2 10 V µA µA 1.3 5 13 20 9.6 nC nC nC ns ns ns ns -1.2 -0.13 -0.52 V A A 2 of 3 QW-R502-896.b BSS84ZDW Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-896.b