UNISONIC TECHNOLOGIES CO., LTD UM6K1N Power MOSFET SILICON N-CHANNEL MOSFET DESCRIPTION The UTC UM6K1N is a silicon N-channel MOSFET. it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate threshold voltage. The UTC UM6K1N is suitable for switching and interfacing applications. FEATURES * RDS(on) < 8 Ω @ VGS=4V, ID=10mA RDS(on) < 13 Ω @ VGS=2.5V, ID=1mA * High switching speed * Low gate threshold voltage SYMBOL D1 G1 D2 G2 S1 S2 ORDERING INFORMATION Ordering Number Note: UM6K1NG-AL6-R Pin Assignment: G: Gate D: Drain Package SOT-363 Pin Assignment Packing 1 2 3 4 5 6 S1 G1 D2 S2 G2 D1 Tape Reel S: Source MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-897.C UM6K1N Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C) PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL RATINGS UNIT VDSS 30 V VGSS ±20 V Continuous ID 100 mA Drain Current Pulsed (Note 1) IDM 200 mA Power Dissipation (Note 2) TC=25°C PD 150 mW Channel Temperature TCH 150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pw≤10µs, Duty cycle≤50%. 3. With each pin mounted on the recommended lands. ELECTRICAL CHARACTERISTICS (TA=25°C) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate-Source Leakage Current Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance Forward Transfer Admittance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall-Time SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) |YFS| CISS COSS CRSS tD(ON) tR tD(OFF) tF UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS MIN TYP MAX UNIT ID=10µA, VGS=0V VDS=30V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V 30 VDS=3V, ID=100µA VGS=4V, ID=10mA VGS=2.5V, ID=1mA VDS=3V, ID=10mA 0.8 1.0 +1 -1 5 7 20 1.5 8 13 V µA µA µA V Ω Ω mS VGS=0V, VDS=5V, f=1.0MHz 13 9 4 pF pF pF VDD≈5V, VGS=5V, ID=10mA, RGS=10Ω, RL=500Ω 15 35 80 80 ns ns ns ns 2 of 4 QW-R502-897.C UM6K1N Power MOSFET TEST CIRCUITS AND WAVEFORMS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R502-897.C UM6K1N Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-897.C