UNISONIC TECHNOLOGIES CO., LTD UP672 Power MOSFET N-CHANNEL MOSFET ARRAY FOR SWITCHING DESCRIPTION 6 5 4 The UTC UP672 includes two MOSFET devices in a SOT-363 package. It achieves high-density mounting and saves mounting costs. 1 2 3 SOT-363 FEATURES * Automatic mounting supported SYMBOL (3) D2 (6) D1 (5) G2 (2) G1 S1 (1) S2 (4) N-Channel N-Channel ORDERING INFORMATION Ordering Number Lead Free Halogen Free UP672L-AL6-R UP672G-AL6-R Note: Pin Assignment: G: Gate D: Drain Package SOT-363 S: Source 1 S1 Pin Assignment 2 3 4 5 G1 D2 S2 G2 6 D1 Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-504.B UP672 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C) PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL RATINGS UNIT VDSS 50 V VGSS ±7.0 V Continuous ID 100 mA Drain Current Pulsed (Note 2) IDM 200 mA Total Power Dissipation PD 200 mW Channel Temperature TCH 150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. PW ≤ 10ms, Duty Cycle ≤ 50% ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Turn-ON Delay Time Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall Time IGSS VGS(OFF) RDS(ON)1 RDS(ON)2 |yFS| MIN ID=250µA, VGS=0V VDS=50V, VGS=0V VDS=0V ,VGS=7.0V VDS=0V ,VGS=-7.0V 50 VDS=3.0V, ID=1.0µA VGS=2.5V, ID=10mA VGS=4.0V, ID=10mA VDS=3.V, ID=10mA 0.7 TYP 1.0 3 2.3 20 MAX UNIT 10 5.0 -5.0 V µA µA µA 1.5 40 20 V Ω Ω mS CISS COSS CRSS VDS=3.0V, VGS=0V, f=1.0MHz 27 17 11 pF pF pF tD(ON) tR tD(OFF) tF VDD=3V,ID=20mA, VGS(ON)=3V, RG=10Ω, RL=120Ω 30 18 42 12.5 ns ns ns ns UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS 2 of 3 QW-R502-504.B UP672 Power MOSFET SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-504.B UP672 Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (µA) Drain Current, ID (µA) 14 Drain Current, ID (mA) 12 VGS=4V, ID=10mA 10 8 VGS=2.5V, ID=10mA 6 4 2 0 0 50 100 150 200 250 Drain to Source Voltage, VDS (mV) Source to Drain Diode Current, ISD (mA) Drain-Source On-State Resistance Characteristics Source to Drain Diode Current vs. Source to Drain Voltage 140 120 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 3 QW-R502-504.B