UNISONIC TECHNOLOGIES CO., LTD UT7430 Preliminary Power MOSFET 30V, 34A N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT7430 is an N-Channel MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. The UTC UT7430 is suitable for general purpose applications and high side switch in SMPS. FEATURES * RDS(ON)<12mΩ @ VGS=10V, ID=20A RDS(ON)<16mΩ @ VGS=4.5V, ID=20A * Low gate charge * High switching speed ORDERING INFORMATION Ordering Number Note: UT7430G-K08-3030-R Pin Assignment: G: Gate D: Drain Package DFN-8(3×3) S: Source 1 S 2 S Pin Assignment 3 4 5 6 7 S G D D D 8 D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-903.d UT7430 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 30 V ±20 V TC=25°C 34 A Continuous ID Drain Current TC=100°C 21 A Pulsed (Note 3) IDM 80 A TA=25°C 13 A IDSM Continuous Drain Current (Note 1) TA=70°C 10.2 A Avalanche Current (Note 3) IAR 22 A Repetitive Avalanche Energy L=0.1mH (Note 3) EAR 24 mJ TC=25°C 23 W PD Power Dissipation (Note 2) TC=100°C 9 W TA=25°C 3.1 W PDSM Power Dissipation (Note 1) TA=70°C 2 W Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VDSS VGSS THERMAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNIT Junction to Ambient (Note 1) θJA 60 75 °C/W Junction to Case (Note 2) θJC 4.5 5.4 °C/W 2 Notes: 1. The value of θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. 2. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heat sinking is used. 3. Repetitive rating, pulse width limited by junction temperature TJ (MAX)=150°C. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-903.d UT7430 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate-Source Leakage Current Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) TEST CONDITIONS ID=250µA, VGS=0V VDS=30V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V 30 VDS=VGS, ID=250µA VGS=10V, ID=20A VGS=4.5V, ID=20A VDS=5V, ID=20A VGS=10V, VDS=5V 1.5 Forward Transconductance gFS On State Drain Current ID(ON) DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=15V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS Gate Resistance RG VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge QG VGS=4.5V, VDS=15V, ID=20A Total Gate Charge QG VGS=10V, VDS=15V, ID=20A Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous IS Current Drain-Source Diode Forward Voltage VSD IS=1A, VGS=0V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1 100 100 1.9 10 13 45 2.5 12 16 80 0.8 760 125 70 1.6 2.4 6.6 14 2.4 3 4.4 9 17 6 0.7 V µA nA nA V mΩ mΩ S A pF pF pF Ω nC nC nC nC ns ns ns ns 25 A 1 V 3 of 6 QW-R502-903.d UT7430 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS RG 90% RD VGS VDS 10V 10% DUT VGS td(ON) tON Resistive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw tR td(OFF) tF tOFF Resistive Switching Waveforms 4 of 6 QW-R502-903.d UT7430 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-903.d UT7430 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-903.d