AON7430L N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON7430L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. VDS (V) = 30V ID = 20A (VGS = 10V) RDS(ON) < 12mΩ (VGS = 10V) RDS(ON) < 16mΩ (VGS = 4.5V) - RoHS Compliant - Halogen Free 100% UIS Tested! 100% R g Tested! DFN 3x3 Top View D Bottom View Top View S S S G Pin 1 D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G TC=25°C Units V ±20 V 20 TC=100°C Pulsed Drain Current C Continuous Drain Current A Maximum 30 ID 16 IDM 80 TA=25°C A 9 TA=70°C A 7 Avalanche Current C IDSM IAR 22 A Repetitive avalanche energy L=0.1mH C EAR 24 mJ TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. 1.7 W 1 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State W 10 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B 25 PD TC=100°C RθJA RθJC Typ 30 60 4 °C Max 40 75 5 Units °C/W °C/W °C/W www.aosmd.com AON7430L Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) VDS=VGS ID=250µA 1.5 ID(ON) Gate Threshold Voltage On state drain current VGS=10V, VDS=5V 80 RDS(ON) Static Drain-Source On-Resistance TJ=55°C 5 VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Units V 1 Zero Gate Voltage Drain Current gFS Max 30 IDSS IS Typ VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 1.9 µA 100 nA 2.5 V A 10 12 14 17 13 16 mΩ 1 V 25 A mΩ 45 0.7 S 610 760 910 pF 88 125 160 pF 40 70 100 pF 0.8 1.6 2.4 Ω 11 14 17 nC 5 6.6 8 nC 1.9 2.4 2.9 nC 3 4.2 nC 1.8 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 4.4 ns 9 ns 17 ns 6 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 5.6 7 8 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 6.4 8 9.6 ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. G. The maximum current rating is limited by bond-wires. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 0 : Nov-08 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON7430L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 30 5V 10V 4.5 6V 60 VDS=5V 25 4V 40 ID(A) ID (A) 20 15 3.5V 10 125°C 20 VGS=3V 5 25°C 0 0 0 1 2 3 4 1 5 1.5 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 18 Normalized On-Resistance 1.6 16 RDS(ON) (mΩ) 2 VGS=4.5V 14 12 10 VGS=10V 8 VGS=10V ID=20A 1.4 17 5 2 VGS=4.5V10 1.2 1 ID=20A 0.8 6 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18 Temperature 30 1.0E+02 ID=20A 1.0E+01 25 40 20 IS (A) RDS(ON) (mΩ) 1.0E+00 125°C 1.0E-01 125°C 1.0E-02 25°C 15 1.0E-03 10 1.0E-04 25°C 1.0E-05 5 0.0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AON7430L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=15V ID=20A 1000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 400 Coss Crss 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge Characteristics 14 0 10µs 100.0 RDS(ON) limited 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 160 30 100µs 1ms 10ms DC 1.0 0.1 1 VDS (Volts) 10 100 80 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 17 5 2 10 120 40 TJ(Max)=150°C TC=25°C 0.0 0.01 TJ(Max)=150°C TC=25°C 10µs Power (W) 10.0 0.1 5 200 1000.0 ID (Amps) 600 200 0 ZθJC Normalized Transient Thermal Resistance 800 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=5°C/W 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON7430L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 TA=25°C 50 Power Dissipation (W) ID(A), Peak Avalanche Current 60 TA=100°C 40 30 TA=125°C TA=150°C 20 10 25 20 15 10 5 0 0 0.000001 0.00001 0.0001 0 0.001 25 100 125 150 TA=25°C 20 1000 Power (W) Current rating ID(A) 75 10000 25 15 10 17 5 2 10 100 10 5 1 0.00001 0 0 25 50 75 100 125 150 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.001 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note F) ZθJA Normalized Transient Thermal Resistance 50 TCASE (°C) Figure 13: Power De-rating (Note F) Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON7430L Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.aosmd.com