RU30C8H

RU30C8H
Complementary Advanced Power MOSFET
Features
Pin Description
• N-Channel
30V/8A,
D2
D2
RDS (ON) =12mΩ(Typ.) @ VGS=10V
RDS (ON) =16mΩ(Typ.) @ VGS=4.5V
D1
D1
• P-Channel
-30V/-7A,
G2
RDS (ON) =18mΩ (Typ.) @ VGS=-10V
RDS (ON) =25mΩ (Typ.) @ VGS=-4.5V
S2
G1
• Reliable and Rugged
• ESD Protected
• Lead Free and Green Devices Available (RoHS Compliant)
pin1
S1
SOP-8
Applications
D1
D2
• Load Switch
G1
G2
S1
S2
Complementary MOSFET
Absolute Maximum Ratings
Parameter
Symbol
N-Channel P-Channel
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
30
-30
VGSS
Gate-Source Voltage
±12
±12
Maximum Junction Temperature
150
150
°C
-55 to 150
-55 to 150
°C
TA=25°C
2.7
-2.5
A
TA=25°C
32
-28
A
TA=25°C
8
-7
TA=70°C
6.5
-5.6
TA=25°C
2
2
TA=70°C
1.3
1.3
Thermal Resistance-Junction to Case
TBD
TBD
°C/W
Thermal Resistance-Junction to Ambient
62.5
62.5
°C/W
TBD
TBD
mJ
TJ
TSTG
IS
V
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
①
300μs Pulse Drain Current Tested
②
Continuous Drain Current(VGS=±10V)
IDP
ID
PD
RθJC
RθJA
③
Maximum Power Dissipation
A
W
Drain-Source Avalanche Ratings
EAS
④
Avalanche Energy, Single Pulsed
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
1
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RU30C8H
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
RU30C8H
Symbol
Parameter
Test Condition
Unit
Min.
Typ.
Max.
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, IDS=250µA
N
30
VGS=0V, IDS=-250µA
P
-30
VDS=30V, VGS=0V
IDSS
Zero Gate Voltage Drain Current
V
1
N
TJ=125°C
VDS=-30V, VGS=0V
30
P
TJ=125°C
VGS(th)
IGSS
Gate Threshold Voltage
Gate Leakage Current
⑤
RDS(ON)
Drain-Source On-state Resistance
µA
-1
-30
VDS=VGS, IDS=250µA
N
1.2
1.8
2.4
VDS=VGS, IDS=-250µA
P
-1.2
-1.8
-2.4
VGS=±12V, VDS=0V
N
±10
VGS=±12V, VDS=0V
P
±10
VGS=10V, IDS=8A
N
12
15
VGS=-10V, IDS=-6A
P
18
25
VGS=4.5V, IDS=7A
N
16
25
VGS=-4.5V, IDS=-5A
P
25
35
ISD=1A, VGS=0V
N
1.2
ISD=-1A, VGS=0V
P
-1.2
N-Channel
ISD=8A, dlSD/dt=100A/µs
N
12
P
17
P-Channel
ISD=-7A, dlSD/dt=100A/µs
N
3
P
9
N
1.8
P
3
N
340
P
780
N
75
P
155
N
50
P
95
V
µA
mΩ
Diode Characteristics
VSD
⑤
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Dynamic Characteristics
RG
Ciss
Coss
Crss
V
ns
nC
⑥
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
VGS=0V,VDS=0V,F=1MHz
N-Channel
VGS=0V,VDS=15V,
Frequency=1.0MHz
P-Channel
VGS=0V,VDS=-15V,
Frequency=1.0MHz
2
Ω
pF
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RU30C8H
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
RU30C8H
Symbol
Parameter
Test Condition
Unit
Min.
Dynamic Characteristics
td(ON)
tr
td(OFF)
tf
Qgs
Qgd
Notes:
Max.
⑥
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
N-Channel
VDD=15V, IDS=8A,
VGEN=10V, RG=6Ω
P-Channel
VDD=-15V, IDS=-7A,
VGEN= -10V, RG=6Ω
Turn-off Fall Time
Gate Charge Characteristics
Qg
Typ.
N
5
P
9
N
3
P
6
N
15
P
21
N
4
P
7
N
8
P
15
N
1.2
P
2.5
N
2
P
3.5
ns
⑥
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
N-Channel
VDS=24V, VGS=10V,
IDS=8A
P-Channel
VDS=-24V, VGS= -10V,
IDS=-7A
nC
①Pulse width limited by safe operating area.
②Calculated continuous current based on maximum allowable junction temperature.
③When mounted on 1 inch square copper board, t≤10sec. The value in any given application
depends on the user's specific board design.
④Limited by TJmax. Starting TJ = 25°C.
⑤Pulse test;Pulse width≤300µs, duty cycle≤2%.
⑥Guaranteed by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
3
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RU30C8H
Ordering and Marking Information
Device
Marking
Package
RU30C8H
RU30C8H
SOP-8
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
Packaging Quantity Reel Size Tape width
Tape&Reel
4
2500
13’’
12mm
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RU30C8H
Typical Characteristics(N-Channel)
Power Dissipation
3
Drain Current
9
ID - Drain Current (A)
PD - Power (W)
8
2
1
7
6
5
4
3
2
1
VGS=10V
0
0
0
25
50
75
100
125
150
25
175
50
DC
0.1
0.01
TA=25°C
0.01
0.1
RDS(ON) - On - Resistance (mΩ)
RDS(ON) limited
ID - Drain Current (A)
10µs
100µs
1ms
10ms
1
100
125
150
175
Drain Current
Safe Operation Area
10
75
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
50
Ids=8A
40
30
20
10
0
1
10
0
100
1
2
3
4
5
6
7
8
9
10
VGS - Gate-Source Voltage (V)
VDS - Drain-Source Voltage (V)
ZthJA - Thermal Response (°C/W)
Thermal Transient Impedance
1000
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
100
10
1
Single Pulse
RθJA=62.5°C/W
0.1
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (sec)
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
5
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RU30C8H
Typical Characteristics(N-Channel)
Output Characteristics
100
RDS(ON) - On Resistance (mΩ)
8V
ID - Drain Current (A)
Drain-Source On Resistance
50
80
10V
5V
60
3V
40
20
1V
0
0
1
2
3
4
40
30
20
4.5V
10
10V
0
5
0
2
4
VDS - Drain-Source Voltage (V)
10
Source-Drain Diode Forward
100
VGS=10V
IDS=8A
2.0
IS - Source Current (A)
Normalized On Resistance
8
ID - Drain Current (A)
Drain-Source On Resistance
2.5
6
1.5
1.0
0.5
TJ=25°C
Rds(on)=12mΩ
10
TJ=150°C
TJ=25°C
1
0.1
0.0
0.2
-50
-25
0
25
50
75
100
125
150
175
0.4
Capacitance
VGS - Gate-Source Voltage (V)
C - Capacitance (pF)
Frequency=1.0MHz
400
Ciss
200
Coss
Crss
0
1
1
1.2
1.4
Gate Charge
500
100
0.8
VSD - Source-Drain Voltage (V)
TJ - Junction Temperature (°C)
300
0.6
10
100
10
VDS=24V
IDS=8A
9
8
7
6
5
4
3
2
1
0
0
VDS - Drain-Source Voltage (V)
2
4
6
8
10
QG - Gate Charge (nC)
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
6
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RU40P3C
Typical Characteristics(P-Channel)
Power Dissipation
3
Drain Current
8
-ID - Drain Current (A)
PD - Power (W)
7
2
1
6
5
4
3
2
1
VGS=-10V
0
0
0
25
50
75
100
125
150
25
175
50
10µs
100µs
1ms
10ms
1
DC
0.1
0.01
TA=25°C
0.01
0.1
125
150
175
100
RDS(ON) - On - Resistance (mΩ)
RDS(ON) limited
-ID - Drain Current (A)
10
100
Drain Current
Safe Operation Area
100
75
TJ - Junction Temperature (°C)
TJ - Junction Temperature (°C)
Ids=-7A
80
60
40
20
0
1
10
0
100
1
2
3
4
5
6
7
8
9
10
-VGS - Gate-Source Voltage (V)
-VDS - Drain-Source Voltage (V)
ZthJA - Thermal Response (°C/W)
Thermal Transient Impedance
1000
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
100
10
1
Single Pulse
RθJA=62.5°C/W
0.1
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (sec)
Ruichips Semiconductor Co., Ltd
Rev. A– JAN., 2013
7
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RU40P3C
Typical Characteristics(P-Channel)
Output Characteristics
Drain-Source On Resistance
100
-8V
-10V
RDS(ON) - On Resistance (mΩ)
-ID - Drain Current (A)
100
80
-5V
60
-3V
40
20
-1V
0
0
1
2
3
4
80
60
40
-4.5V
-10V
20
0
5
0
2
4
-VDS - Drain-Source Voltage (V)
10
Source-Drain Diode Forward
100
VGS=-10V
IDS=-7A
2.0
-IS - Source Current (A)
Normalized On Resistance
8
-ID - Drain Current (A)
Drain-Source On Resistance
2.5
6
1.5
1.0
0.5
TJ=25°C
Rds(on)=18mΩ
10
TJ=150°C
TJ=25°C
1
0.1
0.0
0.2
-50
-25
0
25
50
75
100
125
150
175
0.4
Capacitance
-VGS - Gate-Source Voltage (V)
C - Capacitance (pF)
1
1.2
1.4
Gate Charge
1500
Frequency=1.0MHz
1200
Ciss
900
600
Coss
300
Crss
1
0.8
-VSD - Source-Drain Voltage (V)
TJ - Junction Temperature (°C)
0
0.6
10
100
-VDS - Drain-Source Voltage (V)
10
VDS=-24V
IDS=-7A
9
8
7
6
5
4
3
2
1
0
0
5
10
15
20
QG - Gate Charge (nC)
Ruichips Semiconductor Co., Ltd
Rev. A– JAN., 2013
8
www.ruichips.com
RU30C8H
Package Information
SOP-8
D
E
E1
L
C
e
θ
SYMBOL
A
A1
A2
b
c
D
E
E1
e
L
θ
A
A2
A1
b
MM
MIN
1.300
0.050
1.350
0.330
0.170
4.700
3.800
5.800
0.400
0°
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
NOM
1.525
0.150
1.450
0.420
0.210
4.900
3.900
6.000
1.270 BSC
0.835
INCH
MAX
1.750
0.250
1.550
0.510
0.250
5.100
4.000
6.200
MIN
0.051
0.002
0.053
0.013
0.007
0.185
0.150
0.228
1.270
8°
0.016
0°
9
NOM
0.060
0.006
0.057
0.017
0.008
0.193
0.154
0.236
0.050 BSC
0.033
MAX
0.069
0.010
0.061
0.020
0.010
0.201
0.157
0.244
0.050
8°
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RU30C8H
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Investor Relations Contacts:
[email protected]
Marcom Contact:
[email protected]
Editorial Contact:
[email protected]
HR Contact:
[email protected]
Legal Contact:
[email protected]
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: [email protected]
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
10
www.ruichips.com