RU30C8H Complementary Advanced Power MOSFET Features Pin Description • N-Channel 30V/8A, D2 D2 RDS (ON) =12mΩ(Typ.) @ VGS=10V RDS (ON) =16mΩ(Typ.) @ VGS=4.5V D1 D1 • P-Channel -30V/-7A, G2 RDS (ON) =18mΩ (Typ.) @ VGS=-10V RDS (ON) =25mΩ (Typ.) @ VGS=-4.5V S2 G1 • Reliable and Rugged • ESD Protected • Lead Free and Green Devices Available (RoHS Compliant) pin1 S1 SOP-8 Applications D1 D2 • Load Switch G1 G2 S1 S2 Complementary MOSFET Absolute Maximum Ratings Parameter Symbol N-Channel P-Channel Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 -30 VGSS Gate-Source Voltage ±12 ±12 Maximum Junction Temperature 150 150 °C -55 to 150 -55 to 150 °C TA=25°C 2.7 -2.5 A TA=25°C 32 -28 A TA=25°C 8 -7 TA=70°C 6.5 -5.6 TA=25°C 2 2 TA=70°C 1.3 1.3 Thermal Resistance-Junction to Case TBD TBD °C/W Thermal Resistance-Junction to Ambient 62.5 62.5 °C/W TBD TBD mJ TJ TSTG IS V Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ② Continuous Drain Current(VGS=±10V) IDP ID PD RθJC RθJA ③ Maximum Power Dissipation A W Drain-Source Avalanche Ratings EAS ④ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013 1 www.ruichips.com RU30C8H Electrical Characteristics (TA=25°C Unless Otherwise Noted) RU30C8H Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA N 30 VGS=0V, IDS=-250µA P -30 VDS=30V, VGS=0V IDSS Zero Gate Voltage Drain Current V 1 N TJ=125°C VDS=-30V, VGS=0V 30 P TJ=125°C VGS(th) IGSS Gate Threshold Voltage Gate Leakage Current ⑤ RDS(ON) Drain-Source On-state Resistance µA -1 -30 VDS=VGS, IDS=250µA N 1.2 1.8 2.4 VDS=VGS, IDS=-250µA P -1.2 -1.8 -2.4 VGS=±12V, VDS=0V N ±10 VGS=±12V, VDS=0V P ±10 VGS=10V, IDS=8A N 12 15 VGS=-10V, IDS=-6A P 18 25 VGS=4.5V, IDS=7A N 16 25 VGS=-4.5V, IDS=-5A P 25 35 ISD=1A, VGS=0V N 1.2 ISD=-1A, VGS=0V P -1.2 N-Channel ISD=8A, dlSD/dt=100A/µs N 12 P 17 P-Channel ISD=-7A, dlSD/dt=100A/µs N 3 P 9 N 1.8 P 3 N 340 P 780 N 75 P 155 N 50 P 95 V µA mΩ Diode Characteristics VSD ⑤ trr Qrr Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Dynamic Characteristics RG Ciss Coss Crss V ns nC ⑥ Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013 VGS=0V,VDS=0V,F=1MHz N-Channel VGS=0V,VDS=15V, Frequency=1.0MHz P-Channel VGS=0V,VDS=-15V, Frequency=1.0MHz 2 Ω pF www.ruichips.com RU30C8H Electrical Characteristics (TA=25°C Unless Otherwise Noted) RU30C8H Symbol Parameter Test Condition Unit Min. Dynamic Characteristics td(ON) tr td(OFF) tf Qgs Qgd Notes: Max. ⑥ Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time N-Channel VDD=15V, IDS=8A, VGEN=10V, RG=6Ω P-Channel VDD=-15V, IDS=-7A, VGEN= -10V, RG=6Ω Turn-off Fall Time Gate Charge Characteristics Qg Typ. N 5 P 9 N 3 P 6 N 15 P 21 N 4 P 7 N 8 P 15 N 1.2 P 2.5 N 2 P 3.5 ns ⑥ Total Gate Charge Gate-Source Charge Gate-Drain Charge N-Channel VDS=24V, VGS=10V, IDS=8A P-Channel VDS=-24V, VGS= -10V, IDS=-7A nC ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. ③When mounted on 1 inch square copper board, t≤10sec. The value in any given application depends on the user's specific board design. ④Limited by TJmax. Starting TJ = 25°C. ⑤Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑥Guaranteed by design, not subject to production testing. Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013 3 www.ruichips.com RU30C8H Ordering and Marking Information Device Marking Package RU30C8H RU30C8H SOP-8 Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013 Packaging Quantity Reel Size Tape width Tape&Reel 4 2500 13’’ 12mm www.ruichips.com RU30C8H Typical Characteristics(N-Channel) Power Dissipation 3 Drain Current 9 ID - Drain Current (A) PD - Power (W) 8 2 1 7 6 5 4 3 2 1 VGS=10V 0 0 0 25 50 75 100 125 150 25 175 50 DC 0.1 0.01 TA=25°C 0.01 0.1 RDS(ON) - On - Resistance (mΩ) RDS(ON) limited ID - Drain Current (A) 10µs 100µs 1ms 10ms 1 100 125 150 175 Drain Current Safe Operation Area 10 75 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) 50 Ids=8A 40 30 20 10 0 1 10 0 100 1 2 3 4 5 6 7 8 9 10 VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) ZthJA - Thermal Response (°C/W) Thermal Transient Impedance 1000 Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 100 10 1 Single Pulse RθJA=62.5°C/W 0.1 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (sec) Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013 5 www.ruichips.com RU30C8H Typical Characteristics(N-Channel) Output Characteristics 100 RDS(ON) - On Resistance (mΩ) 8V ID - Drain Current (A) Drain-Source On Resistance 50 80 10V 5V 60 3V 40 20 1V 0 0 1 2 3 4 40 30 20 4.5V 10 10V 0 5 0 2 4 VDS - Drain-Source Voltage (V) 10 Source-Drain Diode Forward 100 VGS=10V IDS=8A 2.0 IS - Source Current (A) Normalized On Resistance 8 ID - Drain Current (A) Drain-Source On Resistance 2.5 6 1.5 1.0 0.5 TJ=25°C Rds(on)=12mΩ 10 TJ=150°C TJ=25°C 1 0.1 0.0 0.2 -50 -25 0 25 50 75 100 125 150 175 0.4 Capacitance VGS - Gate-Source Voltage (V) C - Capacitance (pF) Frequency=1.0MHz 400 Ciss 200 Coss Crss 0 1 1 1.2 1.4 Gate Charge 500 100 0.8 VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) 300 0.6 10 100 10 VDS=24V IDS=8A 9 8 7 6 5 4 3 2 1 0 0 VDS - Drain-Source Voltage (V) 2 4 6 8 10 QG - Gate Charge (nC) Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013 6 www.ruichips.com RU40P3C Typical Characteristics(P-Channel) Power Dissipation 3 Drain Current 8 -ID - Drain Current (A) PD - Power (W) 7 2 1 6 5 4 3 2 1 VGS=-10V 0 0 0 25 50 75 100 125 150 25 175 50 10µs 100µs 1ms 10ms 1 DC 0.1 0.01 TA=25°C 0.01 0.1 125 150 175 100 RDS(ON) - On - Resistance (mΩ) RDS(ON) limited -ID - Drain Current (A) 10 100 Drain Current Safe Operation Area 100 75 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) Ids=-7A 80 60 40 20 0 1 10 0 100 1 2 3 4 5 6 7 8 9 10 -VGS - Gate-Source Voltage (V) -VDS - Drain-Source Voltage (V) ZthJA - Thermal Response (°C/W) Thermal Transient Impedance 1000 Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 100 10 1 Single Pulse RθJA=62.5°C/W 0.1 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (sec) Ruichips Semiconductor Co., Ltd Rev. A– JAN., 2013 7 www.ruichips.com RU40P3C Typical Characteristics(P-Channel) Output Characteristics Drain-Source On Resistance 100 -8V -10V RDS(ON) - On Resistance (mΩ) -ID - Drain Current (A) 100 80 -5V 60 -3V 40 20 -1V 0 0 1 2 3 4 80 60 40 -4.5V -10V 20 0 5 0 2 4 -VDS - Drain-Source Voltage (V) 10 Source-Drain Diode Forward 100 VGS=-10V IDS=-7A 2.0 -IS - Source Current (A) Normalized On Resistance 8 -ID - Drain Current (A) Drain-Source On Resistance 2.5 6 1.5 1.0 0.5 TJ=25°C Rds(on)=18mΩ 10 TJ=150°C TJ=25°C 1 0.1 0.0 0.2 -50 -25 0 25 50 75 100 125 150 175 0.4 Capacitance -VGS - Gate-Source Voltage (V) C - Capacitance (pF) 1 1.2 1.4 Gate Charge 1500 Frequency=1.0MHz 1200 Ciss 900 600 Coss 300 Crss 1 0.8 -VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) 0 0.6 10 100 -VDS - Drain-Source Voltage (V) 10 VDS=-24V IDS=-7A 9 8 7 6 5 4 3 2 1 0 0 5 10 15 20 QG - Gate Charge (nC) Ruichips Semiconductor Co., Ltd Rev. A– JAN., 2013 8 www.ruichips.com RU30C8H Package Information SOP-8 D E E1 L C e θ SYMBOL A A1 A2 b c D E E1 e L θ A A2 A1 b MM MIN 1.300 0.050 1.350 0.330 0.170 4.700 3.800 5.800 0.400 0° Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013 NOM 1.525 0.150 1.450 0.420 0.210 4.900 3.900 6.000 1.270 BSC 0.835 INCH MAX 1.750 0.250 1.550 0.510 0.250 5.100 4.000 6.200 MIN 0.051 0.002 0.053 0.013 0.007 0.185 0.150 0.228 1.270 8° 0.016 0° 9 NOM 0.060 0.006 0.057 0.017 0.008 0.193 0.154 0.236 0.050 BSC 0.033 MAX 0.069 0.010 0.061 0.020 0.010 0.201 0.157 0.244 0.050 8° www.ruichips.com RU30C8H Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Ruichips Semiconductor Co., Ltd Rev. A– DEC., 2013 10 www.ruichips.com