SKiiP 24NAB176V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC IC MiniSKiiP® 2 3-phase bridge rectifier + brake chopper + 3-phase bridge inverter SKiiP 24NAB176V1 • Trench IGBTs • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised: File no. E63532 ICRM VGES tpsc Tj • Max. case temperature limited to TC=125°C • Product reliability results valid for Tj≤125°C (recommended Tj,op=-40...+125°C) • It(RMS) limited to 20A for +B, B, -B, -DC/ U, -DC/V, -DC/W power connectors • The distance between terminals of temperature sensor and –DC/W is not sufficient for basic insulation • The distance between terminals of +rect, +B and +DC not sufficient for basic insulation • The distance between terminals of -B, -DC/U, DC/V and –DC/W not sufficient for basic insulation Tj = 150 °C V 33 A Ts = 70 °C 23 A Ts = 25 °C 38 A Ts = 70 °C ICRM = 2 x ICnom VCC = 1200 V VGE ≤ 20 V VCES ≤ 1700 V 29 A 29 A 58 A -20 ... 20 V 10 µs -55 ... 150 °C 1700 V Ts = 25 °C 33 A Ts = 70 °C 23 A Ts = 25 °C 38 A Ts = 70 °C 29 A 29 A 58 A -20 ... 20 V 10 µs -55 ... 150 °C Tj = 125 °C Chopper - IGBT VCES IC Tj = 25 °C Tj = 125 °C Tj = 150 °C ICnom ICRM VGES tpsc Tj Remarks Tj = 125 °C 1700 Ts = 25 °C ICnom IC Features Tj = 25 °C ICRM = 2 x ICnom VCC = 1200 V VGE ≤ 20 V VCES ≤ 1700 V Tj = 125 °C Inverse - Diode VRRM IF IF Tj = 25 °C Tj = 125 °C Tj = 175 °C 1700 V Ts = 25 °C 37 A Ts = 70 °C 24 A Ts = 25 °C 48 A Ts = 70 °C 38 A 40 A IFnom IFRM IFRM = 2 x IFnom 80 A IFSM tp = 10 ms, sin 180°, Tj = 150 °C 280 A -40 ... 175 °C Tj Freewheeling - Diode VRRM IF IF Tj = 25 °C Tj = 125 °C Tj = 175 °C 1700 V Ts = 25 °C 37 A Ts = 70 °C 24 A Ts = 25 °C 48 A Ts = 70 °C 38 A 40 A 80 A IFnom IFRM IFRM = 2 x IFnom IFSM tp = 10 ms, sin 180°, Tj = 150 °C Tj 280 A -40 ... 175 °C NAB © by SEMIKRON Rev. 1 – 03.11.2014 1 SKiiP 24NAB176V1 Absolute Maximum Ratings Symbol Conditions Values Unit Rectifier - Diode MiniSKiiP® 2 3-phase bridge rectifier + brake chopper + 3-phase bridge inverter SKiiP 24NAB176V1 Features • Trench IGBTs • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised: File no. E63532 Remarks • Max. case temperature limited to TC=125°C • Product reliability results valid for Tj≤125°C (recommended Tj,op=-40...+125°C) • It(RMS) limited to 20A for +B, B, -B, -DC/ U, -DC/V, -DC/W power connectors • The distance between terminals of temperature sensor and –DC/W is not sufficient for basic insulation • The distance between terminals of +rect, +B and +DC not sufficient for basic insulation • The distance between terminals of -B, -DC/U, DC/V and –DC/W not sufficient for basic insulation VRRM Tj = 25 °C IF Ts = 25 °C, Tj = 150 °C IFnom DC current IFSM I2t A 41 A 10 ms sin 180° 370 A Tj = 150 °C 270 A 10 ms sin 180° Tj = 25 °C 685 A2s Tj = 150 °C 365 A2s -40 ... 150 °C Module It(RMS) Tterminal = 80 °C, 20 A per spring Tstg Visol AC sinus 50 Hz, 1 min 40 A -40 ... 125 °C 2500 V Characteristics Symbol Conditions Inverter - IGBT IC = 29 A VCE(sat) VGE = 15 V chiplevel VCE0 chiplevel rCE VGE = 15 V chiplevel min. typ. max. Unit Tj = 25 °C 2.00 2.45 V Tj = 125 °C 2.45 2.90 V Tj = 25 °C 1 1.2 V Tj = 125 °C 0.9 1.1 V Tj = 25 °C 34 43 mΩ Tj = 125 °C 53 62 mΩ VGE(th) VGE = VCE V, IC = 1.2 mA ICES VGE = 0 V VCE = 1700 V Cies Coes Cres VCE = 25 V VGE = 0 V 5.8 6.4 V Tj = 25 °C 5.2 0.1 0.3 mA f = 1 MHz 2.50 nF f = 1 MHz 0.11 nF f = 1 MHz 0.08 nF mA QG - 8 V...+ 15 V 240 nC RGint Tj = 25 °C VCC = 900 V Tj = 125 °C IC = 20 A Tj = 125 °C RG on = 1 Ω Tj = 125 °C RG off = 1 Ω di/dton = 580 A/µs Tj = 125 °C di/dtoff = 120 A/µs Tj = 125 °C du/dt = 4000 V/µs VGE = +15/-15 V Tj = 125 °C Ls = 47 nH per IGBT, λpaste=0.8 W/K*m 32 Ω td(on) tr Eon td(off) tf Eoff Chopper - IGBT IC = 29 A VCE(sat) VGE = 15 V chiplevel VCE0 chiplevel 2 V 59 Tj = 25 °C Tj Rth(j-s) NAB 1800 290 ns 40 ns 5.1 mJ 690 ns 120 ns 6.3 mJ 0.91 K/W Tj = 25 °C 2.00 2.45 V Tj = 125 °C 2.45 2.90 V Tj = 25 °C 1 1.2 V Tj = 125 °C 0.9 1.1 V Tj = 25 °C 34 43 mΩ mΩ rCE VGE = 15 V chiplevel VGE(th) VGE = VCE V, IC = 1.2 mA ICES VGE = 0 V VCE = 1700 V Tj = 125 °C Tj = 25 °C 5.2 53 62 5.8 6.4 V 0.1 0.3 mA Tj = 125 °C mA QG - 8 V...+ 15 V 240 nC RGint Tj = 25 °C 32 Ω Rev. 1 – 03.11.2014 © by SEMIKRON SKiiP 24NAB176V1 Characteristics Symbol MiniSKiiP® 2 3-phase bridge rectifier + brake chopper + 3-phase bridge inverter SKiiP 24NAB176V1 Inverse - Diode VF = VEC IF = 40 A VGE = 0 V chiplevel VF0 chiplevel rF IRRM Features • Trench IGBTs • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised: File no. E63532 Remarks • Max. case temperature limited to TC=125°C • Product reliability results valid for Tj≤125°C (recommended Tj,op=-40...+125°C) • It(RMS) limited to 20A for +B, B, -B, -DC/ U, -DC/V, -DC/W power connectors • The distance between terminals of temperature sensor and –DC/W is not sufficient for basic insulation • The distance between terminals of +rect, +B and +DC not sufficient for basic insulation • The distance between terminals of -B, -DC/U, DC/V and –DC/W not sufficient for basic insulation Conditions min. Chopper - IGBT VCC = 900 V Tj = 125 °C td(on) I C = 20 A Tj = 125 °C tr RG on = 1 Ω Tj = 125 °C Eon RG off = 1 Ω td(off) di/dton = 580 A/µs Tj = 125 °C di/dt Tj = 125 °C tf off = 120 A/µs du/dt = 4000 V/µs VGE = +15/-15 V Tj = 125 °C Eoff Ls = 47 nH per Diode, λpaste=0.8 W/K*m Rth(j-s) Qrr Err Rth(j-s) chiplevel rF IRRM Qrr Err Rth(j-s) chiplevel rF Rth(j-s) chiplevel Unit 290 ns 40 ns 5.1 mJ 690 ns 120 ns 6.3 mJ 0.91 K/W 2 2.4 V Tj = 150 °C 2.1 2.6 V Tj = 25 °C 1.3 1.6 V Tj = 150 °C 1.1 1.2 V Tj = 25 °C 17 20 mΩ 27 33 mΩ 32.7 A 8.7 µC 4.9 mJ 1.14 K/W Tj = 25 °C 2 2.4 V Tj = 150 °C 2.1 2.6 V Tj = 25 °C 1.3 1.6 V Tj = 150 °C 1.1 1.2 V Tj = 25 °C 17 20 mΩ Tj = 150 °C 27 33 mΩ IF = 20 A Tj = 125 °C di/dtoff = 620 A/µs T = 125 °C j VGE = -15 V T j = 125 °C VCC = 900 V per Diode, λpaste=0.8 W/K*m Rectifier - Diode VF = VEC IF = 41 A VGE = 0 V chiplevel VF0 chiplevel max. Tj = 25 °C Tj = 150 °C IF = 20 A Tj = 125 °C di/dtoff = 620 A/µs T = 125 °C j VGE = -15 V Tj = 125 °C VCC = 900 V per Diode, λpaste=0.8 W/K*m Freewheeling - Diode VF = VEC IF = 40 A VGE = 0 V chiplevel VF0 chiplevel typ. Tj = 25 °C 32.7 A 8.7 µC 4.9 mJ 1.14 K/W 1.2 Tj = 125 °C Tj = 25 °C 0.6 1.5 V 1.2 1.4 V 0.9 1.1 V Tj = 125 °C 0.7 1 V Tj = 25 °C 7.9 8.7 mΩ 10 11 Tj = 125 °C per Diode, λpaste=0.8 W/K*m 1.32 mΩ K/W Module Ms to heat sink 2 2.5 Nm w 55 g LCE 31 nH 1670 ± 3% Ω Temperature Sensor R100 Tr = 100 °C, tolerance = 3 % 2 R(T) R(T)=1000Ω[1+A(T-25°C)+B(T-25°C) ], A = 7.635*10-3 °C-1, B = 1.731*10-5 °C-2 NAB © by SEMIKRON Rev. 1 – 03.11.2014 3 SKiiP 24NAB176V1 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Typ. rated current vs. temperature IC = f(TS) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic 4 Rev. 1 – 03.11.2014 © by SEMIKRON SKiiP 24NAB176V1 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance of IGBT and Diode Fig. 10: CAL diode forward characteristic Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. input bridge forward characteristic © by SEMIKRON Rev. 1 – 03.11.2014 5 SKiiP 24NAB176V1 pinout, dimensions pinout This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. 6 Rev. 1 – 03.11.2014 © by SEMIKRON