datasheet

SKiiP 24NAB176V1
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
Inverter - IGBT
VCES
IC
IC
MiniSKiiP® 2
3-phase bridge rectifier +
brake chopper + 3-phase
bridge inverter
SKiiP 24NAB176V1
• Trench IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
ICRM
VGES
tpsc
Tj
• Max. case temperature limited to
TC=125°C
• Product reliability results valid for
Tj≤125°C (recommended
Tj,op=-40...+125°C)
• It(RMS) limited to 20A for +B, B, -B, -DC/
U, -DC/V, -DC/W power connectors
• The distance between terminals of
temperature sensor and –DC/W is not
sufficient for basic insulation
• The distance between terminals of
+rect, +B and +DC not sufficient for
basic insulation
• The distance between terminals of -B,
-DC/U, DC/V and –DC/W not sufficient
for basic insulation
Tj = 150 °C
V
33
A
Ts = 70 °C
23
A
Ts = 25 °C
38
A
Ts = 70 °C
ICRM = 2 x ICnom
VCC = 1200 V
VGE ≤ 20 V
VCES ≤ 1700 V
29
A
29
A
58
A
-20 ... 20
V
10
µs
-55 ... 150
°C
1700
V
Ts = 25 °C
33
A
Ts = 70 °C
23
A
Ts = 25 °C
38
A
Ts = 70 °C
29
A
29
A
58
A
-20 ... 20
V
10
µs
-55 ... 150
°C
Tj = 125 °C
Chopper - IGBT
VCES
IC
Tj = 25 °C
Tj = 125 °C
Tj = 150 °C
ICnom
ICRM
VGES
tpsc
Tj
Remarks
Tj = 125 °C
1700
Ts = 25 °C
ICnom
IC
Features
Tj = 25 °C
ICRM = 2 x ICnom
VCC = 1200 V
VGE ≤ 20 V
VCES ≤ 1700 V
Tj = 125 °C
Inverse - Diode
VRRM
IF
IF
Tj = 25 °C
Tj = 125 °C
Tj = 175 °C
1700
V
Ts = 25 °C
37
A
Ts = 70 °C
24
A
Ts = 25 °C
48
A
Ts = 70 °C
38
A
40
A
IFnom
IFRM
IFRM = 2 x IFnom
80
A
IFSM
tp = 10 ms, sin 180°, Tj = 150 °C
280
A
-40 ... 175
°C
Tj
Freewheeling - Diode
VRRM
IF
IF
Tj = 25 °C
Tj = 125 °C
Tj = 175 °C
1700
V
Ts = 25 °C
37
A
Ts = 70 °C
24
A
Ts = 25 °C
48
A
Ts = 70 °C
38
A
40
A
80
A
IFnom
IFRM
IFRM = 2 x IFnom
IFSM
tp = 10 ms, sin 180°, Tj = 150 °C
Tj
280
A
-40 ... 175
°C
NAB
© by SEMIKRON
Rev. 1 – 03.11.2014
1
SKiiP 24NAB176V1
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
Rectifier - Diode
MiniSKiiP® 2
3-phase bridge rectifier +
brake chopper + 3-phase
bridge inverter
SKiiP 24NAB176V1
Features
• Trench IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Remarks
• Max. case temperature limited to
TC=125°C
• Product reliability results valid for
Tj≤125°C (recommended
Tj,op=-40...+125°C)
• It(RMS) limited to 20A for +B, B, -B, -DC/
U, -DC/V, -DC/W power connectors
• The distance between terminals of
temperature sensor and –DC/W is not
sufficient for basic insulation
• The distance between terminals of
+rect, +B and +DC not sufficient for
basic insulation
• The distance between terminals of -B,
-DC/U, DC/V and –DC/W not sufficient
for basic insulation
VRRM
Tj = 25 °C
IF
Ts = 25 °C, Tj = 150 °C
IFnom
DC current
IFSM
I2t
A
41
A
10 ms
sin 180°
370
A
Tj = 150 °C
270
A
10 ms
sin 180°
Tj = 25 °C
685
A2s
Tj = 150 °C
365
A2s
-40 ... 150
°C
Module
It(RMS)
Tterminal = 80 °C, 20 A per spring
Tstg
Visol
AC sinus 50 Hz, 1 min
40
A
-40 ... 125
°C
2500
V
Characteristics
Symbol
Conditions
Inverter - IGBT
IC = 29 A
VCE(sat)
VGE = 15 V
chiplevel
VCE0
chiplevel
rCE
VGE = 15 V
chiplevel
min.
typ.
max.
Unit
Tj = 25 °C
2.00
2.45
V
Tj = 125 °C
2.45
2.90
V
Tj = 25 °C
1
1.2
V
Tj = 125 °C
0.9
1.1
V
Tj = 25 °C
34
43
mΩ
Tj = 125 °C
53
62
mΩ
VGE(th)
VGE = VCE V, IC = 1.2 mA
ICES
VGE = 0 V
VCE = 1700 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
5.8
6.4
V
Tj = 25 °C
5.2
0.1
0.3
mA
f = 1 MHz
2.50
nF
f = 1 MHz
0.11
nF
f = 1 MHz
0.08
nF
mA
QG
- 8 V...+ 15 V
240
nC
RGint
Tj = 25 °C
VCC = 900 V
Tj = 125 °C
IC = 20 A
Tj = 125 °C
RG on = 1 Ω
Tj = 125 °C
RG off = 1 Ω
di/dton = 580 A/µs Tj = 125 °C
di/dtoff = 120 A/µs Tj = 125 °C
du/dt = 4000 V/µs
VGE = +15/-15 V
Tj = 125 °C
Ls = 47 nH
per IGBT, λpaste=0.8 W/K*m
32
Ω
td(on)
tr
Eon
td(off)
tf
Eoff
Chopper - IGBT
IC = 29 A
VCE(sat)
VGE = 15 V
chiplevel
VCE0
chiplevel
2
V
59
Tj = 25 °C
Tj
Rth(j-s)
NAB
1800
290
ns
40
ns
5.1
mJ
690
ns
120
ns
6.3
mJ
0.91
K/W
Tj = 25 °C
2.00
2.45
V
Tj = 125 °C
2.45
2.90
V
Tj = 25 °C
1
1.2
V
Tj = 125 °C
0.9
1.1
V
Tj = 25 °C
34
43
mΩ
mΩ
rCE
VGE = 15 V
chiplevel
VGE(th)
VGE = VCE V, IC = 1.2 mA
ICES
VGE = 0 V
VCE = 1700 V
Tj = 125 °C
Tj = 25 °C
5.2
53
62
5.8
6.4
V
0.1
0.3
mA
Tj = 125 °C
mA
QG
- 8 V...+ 15 V
240
nC
RGint
Tj = 25 °C
32
Ω
Rev. 1 – 03.11.2014
© by SEMIKRON
SKiiP 24NAB176V1
Characteristics
Symbol
MiniSKiiP® 2
3-phase bridge rectifier +
brake chopper + 3-phase
bridge inverter
SKiiP 24NAB176V1
Inverse - Diode
VF = VEC IF = 40 A
VGE = 0 V
chiplevel
VF0
chiplevel
rF
IRRM
Features
• Trench IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Remarks
• Max. case temperature limited to
TC=125°C
• Product reliability results valid for
Tj≤125°C (recommended
Tj,op=-40...+125°C)
• It(RMS) limited to 20A for +B, B, -B, -DC/
U, -DC/V, -DC/W power connectors
• The distance between terminals of
temperature sensor and –DC/W is not
sufficient for basic insulation
• The distance between terminals of
+rect, +B and +DC not sufficient for
basic insulation
• The distance between terminals of -B,
-DC/U, DC/V and –DC/W not sufficient
for basic insulation
Conditions
min.
Chopper - IGBT
VCC = 900 V
Tj = 125 °C
td(on)
I
C = 20 A
Tj = 125 °C
tr
RG on = 1 Ω
Tj = 125 °C
Eon
RG off = 1 Ω
td(off)
di/dton = 580 A/µs Tj = 125 °C
di/dt
Tj = 125 °C
tf
off = 120 A/µs
du/dt = 4000 V/µs
VGE = +15/-15 V
Tj = 125 °C
Eoff
Ls = 47 nH
per Diode, λpaste=0.8 W/K*m
Rth(j-s)
Qrr
Err
Rth(j-s)
chiplevel
rF
IRRM
Qrr
Err
Rth(j-s)
chiplevel
rF
Rth(j-s)
chiplevel
Unit
290
ns
40
ns
5.1
mJ
690
ns
120
ns
6.3
mJ
0.91
K/W
2
2.4
V
Tj = 150 °C
2.1
2.6
V
Tj = 25 °C
1.3
1.6
V
Tj = 150 °C
1.1
1.2
V
Tj = 25 °C
17
20
mΩ
27
33
mΩ
32.7
A
8.7
µC
4.9
mJ
1.14
K/W
Tj = 25 °C
2
2.4
V
Tj = 150 °C
2.1
2.6
V
Tj = 25 °C
1.3
1.6
V
Tj = 150 °C
1.1
1.2
V
Tj = 25 °C
17
20
mΩ
Tj = 150 °C
27
33
mΩ
IF = 20 A
Tj = 125 °C
di/dtoff = 620 A/µs T = 125 °C
j
VGE = -15 V
T
j = 125 °C
VCC = 900 V
per Diode, λpaste=0.8 W/K*m
Rectifier - Diode
VF = VEC IF = 41 A
VGE = 0 V
chiplevel
VF0
chiplevel
max.
Tj = 25 °C
Tj = 150 °C
IF = 20 A
Tj = 125 °C
di/dtoff = 620 A/µs T = 125 °C
j
VGE = -15 V
Tj = 125 °C
VCC = 900 V
per Diode, λpaste=0.8 W/K*m
Freewheeling - Diode
VF = VEC IF = 40 A
VGE = 0 V
chiplevel
VF0
chiplevel
typ.
Tj = 25 °C
32.7
A
8.7
µC
4.9
mJ
1.14
K/W
1.2
Tj = 125 °C
Tj = 25 °C
0.6
1.5
V
1.2
1.4
V
0.9
1.1
V
Tj = 125 °C
0.7
1
V
Tj = 25 °C
7.9
8.7
mΩ
10
11
Tj = 125 °C
per Diode, λpaste=0.8 W/K*m
1.32
mΩ
K/W
Module
Ms
to heat sink
2
2.5
Nm
w
55
g
LCE
31
nH
1670 ±
3%
Ω
Temperature Sensor
R100
Tr = 100 °C, tolerance = 3 %
2
R(T)
R(T)=1000Ω[1+A(T-25°C)+B(T-25°C)
], A = 7.635*10-3 °C-1,
B = 1.731*10-5 °C-2
NAB
© by SEMIKRON
Rev. 1 – 03.11.2014
3
SKiiP 24NAB176V1
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Typ. rated current vs. temperature IC = f(TS)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
4
Rev. 1 – 03.11.2014
© by SEMIKRON
SKiiP 24NAB176V1
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance of IGBT and Diode
Fig. 10: CAL diode forward characteristic
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. input bridge forward characteristic
© by SEMIKRON
Rev. 1 – 03.11.2014
5
SKiiP 24NAB176V1
pinout, dimensions
pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
6
Rev. 1 – 03.11.2014
© by SEMIKRON