UNISONIC TECHNOLOGIES CO., LTD 02N06Z Preliminary Power MOSFET 0.2A, 60V SILICON N-CHANNEL MOSFET DESCRIPTION The UTC 02N06Z is a silicon N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge. FEATURES * RDS(ON) < 2.4Ω @ VGS=10V, ID=200mA RDS(ON) < 4.0Ω @ VGS=4V, ID=200mA * High switching speed * Low gate charge * High ESD SYMBOL 3. Drain 2. Gate 1. Source ORDERING INFORMATION Ordering Number Note: 02N06ZG-AL3-R Pin Assignment: G: Gate D: Drain Package SOT-323 1 S Pin Assignment 2 3 G D Packing Tape Reel S: Source MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-906.b 02N06Z Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL RATINGS UNIT VDSS 60 V VGSS ±20 V Continuous ID 200 mA Drain Current Pulsed (Note 2) IDM 800 mA Continuous IS 200 mA Source Current Pulsed (Note 2) ISP 800 mA Power Dissipation (Note 3) PD 200 mW Channel Temperature TCH 150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. PW ≤ 10µs, Duty cycle ≤ 1% 3. Each terminal mounted on a recommended ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate-Source Leakage Current Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance (Note 2) Forward Transfer Admittance (Note 2) DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS (Note 3) Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall-Time Notes: 1. PW ≤ 300µs, Duty cycle ≤ 1% 2. Pulsed SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) |YFS| CISS COSS CRSS QG QGS QGD tD(ON) tR tD(OFF) tF UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS MIN TYP MAX UNIT ID=10µA, VGS=0V VDS=60V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V 60 VDS=10V, ID=1mA VGS=10V, ID=200mA VGS=4V, ID=200mA VDS=10V, ID=200mA 1 VGS=0V, VDS=10V, f=1.0MHz VGS=10V, VDD=30V, ID=200mA VDD=30V, VGS=10V, ID=100mA, RGS=10Ω, RL=300Ω 1 +10 -10 1.7 2.8 2.5 2.4 4.0 100 15 8 4 2.2 0.6 0.3 6 5 12 95 V µA µA µA V Ω Ω mS pF pF pF 4.4 nC nC nC ns ns ns ns 2 of 4 QW-R502-906.b 02N06Z Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R502-906.b 02N06Z Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-906.b