UNISONIC TECHNOLOGIES CO., LTD UT3P01Z Power MOSFET P CHANNEL POWER MOSFET DESCRIPTION The UT3P01Z uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operated with low gate voltages. This device can be applied to general-purpose switching devices applications. FEATURES * RDS(ON) = 8Ω @VGS = -4 V * Ultra Low Gate Charge ( typical 1.43 nC ) * Low Reverse Transfer Capacitance ( CRSS = typical 1.8 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness * Halogen Free SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Package UT3P01ZG-AL3-R UT3P01ZG-AN3-R UT3P01ZG-AE2-R SOT-323 SOT-523 SOT-23-3 1 S S S Pin Assignment 2 G G G 3 D D D Packing Tape Reel Tape Reel Tape Reel MARKING www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-341.B UT3P01Z Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V VDSS -30 Gate-Source Voltage V VGSS ±10 DC A -0.1 Drain Current ID Pulse(Note 2) A -0.4 SOT-523 150 mW Power Dissipation PD SOT-323 / SOT-23-3 200 mW Storage Temperature TSTG °C -55 ~ +150 Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width≤10μs, Duty cycle≤1% ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Cutoff Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Total Gate Charge SYMBOL BVDSS IDSS IGSS VGS(OFF) RDS(ON) gFS CISS COSS CRSS TEST CONDITIONS VGS=0V, ID=-1mA VDS=-30V,VGS=0V VGS=±8V, VDS=0V -30 VDS=-10V, ID=-100µA VGS=-4V, ID=-50mA VGS=-2.5V, ID=-30mA VGS=-1.5V, ID=-1mA VDS=-10V, ID=-50mA -0.4 VDS=-10V, VGS=0 V, f=1.0MHz QG VDS=-10V, VGS=-10V, Gate Source Charge QGS ID=-100mA Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR See specified Test Circuit Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=-100mA, VGS=0V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -1 ±10 80 8 11 27 110 -1.4 10.4 15.4 54 V µA µA V Ω Ω Ω mS 7.5 5.7 1.8 pF pF pF 1.43 0.18 0.25 24 55 120 130 nC nC ns ns ns ns -0.83 nC -1.2 V 2 of 4 QW-R502-341.B UT3P01Z Power MOSFET SWITCHING TIME TEST CIRCUIT VOUT RL=300 Ω D ID=-50mA VIN G 0V -4V VDD=-15V D.U.T. RG=50Ω S Pulse Width= 10μs Duty cycle≤1% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R502-341.B UT3P01Z Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage 300 250 1.6 Drain Current, ID (µA) Drain Current, ID (mA) 2.0 Drain Current vs. Gate Threshold Voltage 1.2 0.8 0.4 200 150 100 50 0 0 5 0 10 15 20 25 30 35 40 45 50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Drain-Source Breakdown Voltage, BVDSS(V) Gate Threshold Voltage, VTH (V) Drain-Source On-State Resistance Characteristics Drain Current vs. Source to Drain Voltage 120 VGS=-4V ID=50mA 40 30 VGS=-2.5V ID=-30mA 20 10 0 VGS=-1.5V ID=-1mA 0 20 40 60 80 100 120 140 160 180 200 Drain to Source Voltage, VDS (mV) Drain Current, ID (mA) Drain Current, ID (mA) 50 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage, VSD (V) 1.2 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-341.B