UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET DESCRIPTION The UTC UK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is particularly suited for low voltage and low current applications such as small servo motor controllers, power MOSFET gate drivers, and other switching applications. FEATURES * Min VDSS =30V * RDS(ON) =5Ω(VGS=4V) * RDS(ON) =7Ω(VGS=2.5V) * Pulsed ID=400mA * Low voltage drive (2.5V) * Halogen Free SYMBOL ORDERING INFORMATION Ordering Number Package UK3018G-AE2-R UK3018G-AL3-R SOT-23-3 SOT-323 1 S S Pin Assignment 2 G G 3 D D Packing Tape Reel Tape Reel MARKING 3018G www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., LTD 1 of 3 QW-R502-313.b UK3018 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATING (Ta=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous ID 100 mA Drain Current Pulsed (Note 2) IDP 400 mA Power Dissipation (Note 3) PD 200 mW Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pw≤10µs, Duty cycle≤1% 3. With each pin mounted on the recommended lands. THERMAL RESISTANCE PARAMETER Junction to Ambient SYMBOL θJA RATINGS 625 UNIT °С/W ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static drain-source on-state resistance DYNAMIC PARAMETERS Input capacitance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Turn-ON Delay Time Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall-Time SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS=0V, ID=10μA VDS=30V, VGS=0V VDS=0V, VGS=±20V, 30 VGS(TH) VDS=3V, ID=100μA VGS=4V, ID=10mA, VGS=2.5V, ID=1mA, 0.8 RDS(ON) TYP MAX UNIT 5 7 1 ±1 V µA µA 1.5 8 13 V Ω Ω CISS COSS CRSS VDS = 5V, VGS = 0V, f = 1MHz 13 9 4 pF pF pF tD(ON) tR tD(OFF) tF VGS = 5V, VDD≈5V ID = 10mA, RL = 500Ω, RG = 10Ω 15 35 80 80 ns ns ns ns UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 2 of 3 QW-R502-313.b UK3018 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Pulse Width VGS RG ID D.U.T VDS VGS 90% 50% 10% RL 50% 10% VDS 10% VDD tD(ON) tR 90% 90% tD(OFF) tON Switching Time Measurement Circuit tF tOFF Switching Time Waveforms UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-313.b