UNISONIC TECHNOLOGIES CO., LTD BSS138 Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. FEATURES * RDS(ON) < 3.5Ω @ VGS=10 V, ID=0.22A * RDS(ON) < 6.0Ω @ VGS=4.5 V, ID=0.22A * Low Capacitance * Low Gate Charge * Fast Switching Capability * Avalanche Energy Specified SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Note: BSS138G-AE2-R BSS138G-AL3-R Pin Assignment: G: Gate D: Drain Package SOT-23-3 SOT-323 Pin Assignment 1 2 3 S G D S G D Packing Tape Reel Tape Reel S: Source MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-271.F BSS138 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 50 V ±20 V DC 0.22 Continuous Drain Current ID A Pulse 0.88 SOT-23-3 0.36 Power Dissipation PD W SOT-323 0.15 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VDSS VGSS THERMAL DATA PARAMETER Junction to Ambient SYMBOL SOT-23-3 SOT-323 RATINGS 350 833 θJA UNIT °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward ON CHARACTERISTICS (Note) Gate-Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance SYMBOL TEST CONDITIONS BVDSS VGS=0V, ID=250µA ∆BVDSS/∆TJ ID=250μA,Referenced to 25°C VDS=50V, VGS=0V IDSS VDS=30V, VGS=0V IGSS VDS=0V, VGS=±20V VGS(TH) VDS=VGS, ID=1m A 50 RDS(ON) VGS=10 V, ID=0.22A VGS=4.5 V, ID=0.22A VGS=10 V, VDS=5V VDS=10V, ID=0.22A UNISONIC TECHNOLOGIES CO., LTD V mV/°C 72 0.5 0.1 ±100 0.8 ∆VGS(TH)/∆TJ ID=1mA, Referenced to 25°C On-State Drain Current ID(ON) Forward Transconductance gFS DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS (Note) Total Gate Charge QG VDS=25V, VGS=10V, ID=0.22A Gate Source Charge QGS Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=30V, ID=0.29A,VGS=10V, RG=6Ω, Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS= 0V, IS=0.44A (Note) Max. Diode Forward Current IS Note: Pulse test, pulse width ≤ 300us, duty cycle≤ 2% www.unisonic.com.tw MIN TYP MAX UNIT 1.3 1.5 -2 0.7 1.0 0.2 0.12 µA nA V mV/°C 3.5 6.0 Ω 0.5 A S 27 13 6 pF pF pF 1.7 0.1 0.4 2.5 9 20 7 2.4 5 18 36 14 nC nC nC ns ns ns ns 0.8 1.4 0.22 V A 2 of 3 QW-R502-271.F BSS138 Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Source to Drain Voltage 2.0 Static Drain–Source On–Resistance, RDS(ON) (Ω) 1.0 Drain Current, ID (A) 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1 1.2 VGS=4.5V ID=2.22A 1.5 VGS=10V ID=2.22A 1.0 0.5 0 0 1.4 0.2 0.4 0.6 0.8 1.0 Gate to Source Voltage, VGS (V) Source to Drain Voltage, VSD (V) Drain Current vs. Gate Threshold Voltage 1.6 Drain-Source On-State Resistance Characteristics Drain Current vs. Drain-Source Breakdown Voltage 200 1.4 150 Drain Current, ID (A) Drain Current, ID (A) 1.2 1.0 0.8 0.6 0.4 100 50 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 0 20 Gate Threshold Voltage, VTH (V) Drain Current, ID (A) 0.7 80 100 0.6 0.5 VG=4V Drain Current, ID (A) VG=6V VG=8V VG=10V 0.8 60 Transfer Characteristics On-State Characteristics 0.9 40 Drain Source Breakdown Voltage, BVDSS (V) 0.6 0.5 0.4 0.3 VG=2V 0.2 0.4 125°С 25°С 0.3 0.2 0.1 0.1 0 0 1 2 3 4 Drain to Source Voltage, VDS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 0 0.5 1 1.5 2 2.5 3 3.5 4 Gate to Source Voltage, VGS (V) 3 of 3 QW-R502-271.F BSS138 Power MOSFET TYPICAL CHARACTERISTICS (Cont.) Safe Operating Area Transient Thermal Response Curve 100 D=0.5 Operation in This Area is Limited by RDS(on) 100µs Thermal Response, θJC (t) Drain Current, ID (A) 100 1ms 10ms DC 10-1 10-2 10-3 100 Notes: 1. TJ=25°C 2. TJ=150°C 3. Single Pulse 10-1 0.2 0.1 0.05 -2 10 0.02 0.01 Single Pulse 10-3 1 101 102 Drain-Source Voltage, VDS (V) 10-5 10-4 10-3 Notes: 1. θJA (t) = 350°C/W Max. 2. Duty Factor, D=t1/t2 3. TJM-TC=PDM×θJC (t) 10-2 10-1 100 101 Square Wave Pulse Duration, t1 (sec) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 3 QW-R502-271.F