UNISONIC TECHNOLOGIES CO., LTD UF624 Preliminary Power MOSFET 4.4 A, 250 V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF624 is an N-Channel enhancement MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. The UTC UF624 is suitable for all commercial-industrial applications. FEATURES * RDS(ON)=1.1Ω @VGS=10V,ID=2.6A * Low gate charge ( Max=14nC) * Low CRSS ( Typ=15pF) * High switching speed SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF624L-TN3-T UF624G-TN3-T UF624L-TN3-R UF624G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package TO-252 TO-252 1 G G Pin Assignment 2 3 D S D S Packing Tube Tape Reel 1 of 6 QW-R502-855.a UF624 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted) PARAMETER RATINGS UNIT 250 V ±20 V 4.4 A VGS at 10V, TC=25°C ID Continuous Drain Current VGS at 10V, TC=100°C 2.8 A Pulsed (Note 2) IDM 14 A Avalanche Current (Note 2) IAR 4.4 A 100 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 5.0 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.8 V/ns Power Dissipation 50 W PD Linear Derating Factor 0.40 W/°C Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged. 1. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive rating; pulse width limited by maximum junction temperature. 3. VDD=50V, starting TJ=25°C, L=8.3mH, Rg=25Ω, IAS=4.4A. 4. ISD≤4.4A, dI/dt≤90A/μs, VDD≤VDS, TJ≤150°C. Drain-Source Voltage Gate-Source Voltage SYMBOL VDSS VGSS THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 110 2.5 UNIT °C/W °C/W 2 of 6 Ver.a UF624 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient SYMBOL BVDSS TEST CONDITIONS ID=250µA, VGS=0V △BVDSS/△TJ Reference to 25°C, ID=1mA Drain-Source Leakage Current IDSS Gate-Source Leakage Current IGSS MIN TYP MAX UNIT 250 V 0.36 V/°C VDS=250V, VGS=0V VDS=200V, VGS=0V , TJ=125°C VGS=+20V, VDS=0V 25 250 ±10 µA µA µA VGS=-20V, VDS=0V ±10 µA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2.6A (Note 2) 1.1 Ω Forward Transconductance gFS VDS=50V, ID=2.6A (Note 2) 1.5 S DYNAMIC PARAMETERS 260 pF Input Capacitance CISS Output Capacitance COSS 77 pF VGS=0V, VDS=25V, f=1.0MHz Reverse Transfer Capacitance CRSS 15 pF SWITCHING PARAMETERS 14 nC Total Gate Charge QG Gate to Source Charge QGS 2.7 nC VGS=10V, VDS=200V, ID=4.4A Gate to Drain Charge QGD 7.8 nC Turn-ON Delay Time tD(ON) 7.0 ns Rise Time tR 13 ns VDD=125V, ID=4.4A, RG=18Ω, RD=28Ω Turn-OFF Delay Time tD(OFF) 20 ns Fall-Time tF 12 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 4.4 A Maximum Body-Diode Pulsed Current ISM 14 A (Note 1) TJ=25°C, IS=4.4A, VGS=0V (Note Drain-Source Diode Forward Voltage 1.8 V VSD 2) 200 400 ns Body Diode Reverse Recovery Time tRR TJ=25°C, IF=4.4A, dI/dt=100A/µs (Note 2) Body Diode Reverse Recovery Charge QRR 0.93 1.9 µC Intrinsic turn-on time is negligible (turn-on is dominated by Forward Turn-On Time tON LS and LD) Notes: 1. Repetitive rating; pulse width limited by maximum junction temperature. 2. Pulse width≤300µs; duty cycle≤2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-855.a UF624 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit Gate Charge Waveforms 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 4 of 6 QW-R502-855.a UF624 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-855.a UF624 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-855.a