UFZ24N UNISONIC TECHNOLOGIES CO., LTD Power MOSFET 28A, 60V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC UFZ24N is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge. The UTC UFZ24N is suitable for all commercial-industrial applications, etc. TO-220 1 TO-251 1 FEATURES TO-252 * R DS(ON) <0.07Ω @V GS =10V, I D =10A * High switching speed * Low gate charge SYMBOL D (2) G (1) S (3) ORDERING INFORMATION Ordering Number Lead Free Halogen Free UFZ24NL-TA3-T UFZ24NG-TA3-T UFZ24NL-TM3-T UFZ24NG-TM3-T UFZ24NL-TN3-T UFZ24NG-TN3-T UFZ24NL-TN3-R UFZ24NG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source UFZ24NL-TA3-T Package TO-220 TO-251 TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel (1)Packing Type (1) T: Tube, R: Tape Reel (2)Package Type (2) TA3: TO-220, TM3: TO-251, TN3: TO-252 (3)Lead Free (3) L: Lead Free, G: Halogen Free www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-901.B UFZ24N Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 55 V ±20 V T C =25°C 17 A Continuous ID Drain Current T C =100°C 12 A Pulsed (Note 1) I DM 68 A Avalanche Current (Note 1) I AR 10 A Single Pulsed (Note 2) E AS 71 mJ Avalanche Energy Repetitive (Note 1) E AR 4.5 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 5.0 V/ns TO-220 73 W Power Dissipation PD (T C =25°C) TO-251/TO-252 46 W Linear Derating Factor 0.30 W/°C Junction Temperature TJ -55~+175 °C Storage Temperature Range T STG -55~+175 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL V DSS V GSS THERMAL CHARACTERISTICS PARAMETER SYMBOL RATING TO-220 62.5 Junction to Ambient θ JA TO-251/TO-252 100 TO-220 1.71 Junction to Case θ JC TO-251/TO-252 2.7 Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. L=1.0mH, I AS =10A, V DD =25V, R G =25Ω, Starting T J =25°C. 3. I SD ≤10A, di/dt≤280A/µs, V DD ≤BV DSS , Starting T J ≤175°C. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw UNIT °C/W °C/W °C/W °C/W 2 of 6 QW-R502-901.B UFZ24N Power MOSFET ELECTRICAL CHARACTERISTICS (T J =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BV DSS I DSS Forward Reverse I GSS TEST CONDITIONS I D =250µA, V GS =0V V DS =55V, V GS =0V V GS =+20V, V DS =0V V GS =-20V, V DS =0V ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS =V GS , I D =250µA Static Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =10A (Note 2) DYNAMIC PARAMETERS Input Capacitance C ISS V GS =0V, V DS =25V, Output Capacitance C OSS f=1.0MHz Reverse Transfer Capacitance C RSS SWITCHING PARAMETERS Total Gate Charge QG V GS =10V, V DS =44V, I D =10A Gate to Source Charge Q GS (Note 4) Gate to Drain Charge Q GD Turn-ON Delay Time t D(ON) Rise Time tR V DD =28V, I D =10A, R G =24Ω, R D =2.6 Ω (Note 4) Turn-OFF Delay Time t D(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current I SM (Note 1) Drain-Source Diode Forward Voltage V SD T J =25°C, I S =10A, V GS =0V (Note 2) Body Diode Reverse Recovery Time t RR I F =10A, T J =25°C, Body Diode Reverse Recovery Charge di/dt=100A/µs Q RR (Note 2) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Pulse Test: Pulse width≤300µs, Duty cycle≤2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 55 2.0 25 +100 -100 V µA nA nA 4.0 V 0.07 Ω 370 140 65 pF pF pF 20 5.3 7.6 nC nC nC ns ns ns ns 17 A 68 A 1.3 V 56 83 ns 120 180 nC 4.9 34 19 27 3 of 6 QW-R502-901.B UFZ24N Power MOSFET TEST CIRCUITS AND WAVEFORMS VGS Same Type as DUT QG 12V 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit Gate Charge Waveforms VDS RG 90% RD VDS VGS 10V 10% VGS DUT td(ON) tR td(OFF) tF tON Resistive Switching Waveforms Resistive Switching Test Circuit 2 EAS= 1 2 LIAS VDS RG tOFF BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 4 of 6 QW-R502-901.B UFZ24N Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) + DUT VDS RG L - ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-901.B UFZ24N Power MOSFET TYPICAL CHARACTERISTICS 300 Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 Drain Current, ID (µA) 250 Drain Current, ID (µA) 200 150 100 150 100 50 50 0 0 0 0 20 40 60 80 Drain-Source Breakdown Voltage, BVDSS (V) Drain-Source On-State Resistance Characteristics 0.5 1.5 1 2.5 2 Gate Threshold Voltage, VTH (V) 3 Drain Current vs. Source to Drain Voltage 12.5 12 10 VGS=10V, ID=10A 10 Drain Current, ID (A) Drain Current, ID (A) 200 7.5 5 2.5 8 6 4 2 0 0 0.06 0.12 0.18 0.24 0.3 0.36 Drain to Source Voltage, VDS (V) 0 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-901.B