Datasheet

UFZ24N
UNISONIC TECHNOLOGIES CO., LTD
Power MOSFET
28A, 60V N-CHANNEL
POWER MOSFET
1

DESCRIPTION
The UTC UFZ24N is an N-channel Power MOSFET, it uses
UTC’s advanced technology to provide the customers with a
minimum on state resistance, high switching speed and low gate
charge.
The UTC UFZ24N is suitable for all commercial-industrial
applications, etc.

TO-220
1
TO-251
1
FEATURES
TO-252
* R DS(ON) <0.07Ω @V GS =10V, I D =10A
* High switching speed
* Low gate charge

SYMBOL
D (2)
G (1)
S (3)

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UFZ24NL-TA3-T
UFZ24NG-TA3-T
UFZ24NL-TM3-T
UFZ24NG-TM3-T
UFZ24NL-TN3-T
UFZ24NG-TN3-T
UFZ24NL-TN3-R
UFZ24NG-TN3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
UFZ24NL-TA3-T
Package
TO-220
TO-251
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tape Reel
(1)Packing Type
(1) T: Tube, R: Tape Reel
(2)Package Type
(2) TA3: TO-220, TM3: TO-251, TN3: TO-252
(3)Lead Free
(3) L: Lead Free, G: Halogen Free
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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UFZ24N

Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
55
V
±20
V
T C =25°C
17
A
Continuous
ID
Drain Current
T C =100°C
12
A
Pulsed (Note 1)
I DM
68
A
Avalanche Current (Note 1)
I AR
10
A
Single Pulsed (Note 2)
E AS
71
mJ
Avalanche Energy
Repetitive (Note 1)
E AR
4.5
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
5.0
V/ns
TO-220
73
W
Power Dissipation
PD
(T C =25°C)
TO-251/TO-252
46
W
Linear Derating Factor
0.30
W/°C
Junction Temperature
TJ
-55~+175
°C
Storage Temperature Range
T STG
-55~+175
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
V DSS
V GSS
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATING
TO-220
62.5
Junction to Ambient
θ JA
TO-251/TO-252
100
TO-220
1.71
Junction to Case
θ JC
TO-251/TO-252
2.7
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. L=1.0mH, I AS =10A, V DD =25V, R G =25Ω, Starting T J =25°C.
3. I SD ≤10A, di/dt≤280A/µs, V DD ≤BV DSS , Starting T J ≤175°C.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
UNIT
°C/W
°C/W
°C/W
°C/W
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
Power MOSFET
ELECTRICAL CHARACTERISTICS (T J =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BV DSS
I DSS
Forward
Reverse
I GSS
TEST CONDITIONS
I D =250µA, V GS =0V
V DS =55V, V GS =0V
V GS =+20V, V DS =0V
V GS =-20V, V DS =0V
ON CHARACTERISTICS
Gate Threshold Voltage
V GS(TH)
V DS =V GS , I D =250µA
Static Drain-Source On-State Resistance
R DS(ON)
V GS =10V, I D =10A
(Note 2)
DYNAMIC PARAMETERS
Input Capacitance
C ISS
V GS =0V, V DS =25V,
Output Capacitance
C OSS
f=1.0MHz
Reverse Transfer Capacitance
C RSS
SWITCHING PARAMETERS
Total Gate Charge
QG
V GS =10V, V DS =44V, I D =10A
Gate to Source Charge
Q GS
(Note 4)
Gate to Drain Charge
Q GD
Turn-ON Delay Time
t D(ON)
Rise Time
tR
V DD =28V, I D =10A, R G =24Ω,
R D =2.6 Ω (Note 4)
Turn-OFF Delay Time
t D(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
I SM
(Note 1)
Drain-Source Diode Forward Voltage
V SD
T J =25°C, I S =10A, V GS =0V
(Note 2)
Body Diode Reverse Recovery Time
t RR
I F =10A, T J =25°C,
Body Diode Reverse Recovery Charge
di/dt=100A/µs
Q RR
(Note 2)
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Pulse Test: Pulse width≤300µs, Duty cycle≤2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
55
2.0
25
+100
-100
V
µA
nA
nA
4.0
V
0.07
Ω
370
140
65
pF
pF
pF
20
5.3
7.6
nC
nC
nC
ns
ns
ns
ns
17
A
68
A
1.3
V
56
83
ns
120
180
nC
4.9
34
19
27
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS

VGS
Same Type
as DUT
QG
12V
10V
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
VDS
RG
90%
RD
VDS
VGS
10V
10%
VGS
DUT
td(ON)
tR
td(OFF) tF
tON
Resistive Switching Waveforms
Resistive Switching Test Circuit
2
EAS= 1
2 LIAS
VDS
RG
tOFF
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Power MOSFET
TYPICAL CHARACTERISTICS
300
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
Drain Current, ID (µA)
250
Drain Current, ID (µA)

200
150
100
150
100
50
50
0
0
0
0
20
40
60
80
Drain-Source Breakdown Voltage, BVDSS (V)
Drain-Source On-State Resistance
Characteristics
0.5
1.5
1
2.5
2
Gate Threshold Voltage, VTH (V)
3
Drain Current vs. Source to Drain Voltage
12.5
12
10
VGS=10V, ID=10A
10
Drain Current, ID (A)
Drain Current, ID (A)
200
7.5
5
2.5
8
6
4
2
0
0
0.06 0.12 0.18 0.24 0.3 0.36
Drain to Source Voltage, VDS (V)
0
0
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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