Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
MBD128
PUMF11
NPN resistor-equipped transistor;
PNP general purpose transistor
Product data sheet
2002 Apr 09
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistor; PNP
general purpose transistor
FEATURES
PUMF11
QUICK REFERENCE DATA
• Resistor-equipped transistor and general purpose
transistor in one package
SYMBOL
PARAMETER
MAX.
UNIT
• 100 mA collector current
TR1 (NPN)
• 50 V collector-emitter voltage
VCEO
collector-emitter voltage
50
V
• 300 mW total power dissipation
IO
output current (DC)
100
mA
• SOT363 package; replaces two SOT323 (SC-70)
packaged devices on same PCB area
R1
bias resistor
22
kΩ
R2
bias resistor
47
kΩ
• Reduced pick and place costs.
TR2 (PNP)
VCEO
collector-emitter voltage
50
V
APPLICATIONS
IC
collector current (DC)
100
mA
• Power management switch for portable equipment,
e.g. cellular phone and CD player
ICM
peak collector current
200
mA
PINNING
• Switch for regulator.
PIN
DESCRIPTION
DESCRIPTION
1, 4
emitter
TR1; TR2
NPN resistor-equipped transistor and a PNP general
purpose transistor in a SOT363 (SC-88) plastic package.
2, 5
base
TR1; TR2
6, 3
collector
TR1; TR2
MARKING
TYPE NUMBER
PUMF11
MARKING CODE(1)
6
6
R1∗
5
5
4
4
Note
TR2
TR1
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
R2
1
Top view
2
R1
3
MAM465
1
2
3
Fig.1 Simplified outline (SOT363) and symbol.
2, 5
6, 3
1, 4
MBK120
Fig.2 Equivalent inverter symbol.
2002 Apr 09
2
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistor; PNP
general purpose transistor
PUMF11
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
−
200
mW
storage temperature
−65
+150
°C
junction temperature
−
150
°C
operating ambient temperature
−65
+150
°C
Ptot
total power dissipation
Tstg
Tj
Tamb
Tamb ≤ 25 °C; note 1
TR1 (NPN)
VCBO
collector-base voltage
open emitter
−
50
V
VCEO
collector-emitter voltage
open base
−
50
V
VEBO
emitter-base voltage
open collector
−
10
V
Vi
input voltage
positive
−
+40
V
negative
−
−10
V
IO
output current (DC)
−
100
mA
ICM
peak collector current
−
100
mA
TR2 (PNP)
VCBO
collector-base voltage
open emitter
−
−50
V
VCEO
collector-emitter voltage
open base
−
−40
V
VEBO
emitter-base voltage
open collector
−
−5
V
IC
collector current (DC)
−
−100
mA
ICM
peak collector current
−
−200
mA
−
300
mW
Per device
Ptot
Tamb ≤ 25 °C; note 1
total power dissipation
Note
1. Device mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
in free air; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
2002 Apr 09
3
VALUE
UNIT
416
K/W
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistor; PNP
general purpose transistor
PUMF11
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
TR1 (NPN)
ICBO
collector-base cut-off current
VCB = 50 V; IE = 0
−
−
100
nA
ICEO
collector-emitter cut-off current
VCE = 30 V; IB = 0
−
−
1
µA
VCE = 30 V; IB = 0; Tj = 150 °C
−
−
50
µA
mA
IEBO
emitter-base cut-off current
VEB = 5 V; IC = 0
−
−
0.12
hFE
DC current gain
VCE = 5 V; IC = 5 mA
80
−
−
VCEsat
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
−
−
150
mV
Vi(off)
input off voltage
VCE = 5 V; IC = 100 µA
−
0.9
0.5
V
Vi(on)
input on voltage
VCE = 0.3 V; IC = 2 mA
2
1.1
−
V
R1
input resistor
15.4
22
28.6
kΩ
R2
------R1
resistor ratio
1.7
2.1
2.6
Cc
collector capacitance
VCB = 10 V; IE = ie = 0; f = 1 MHz
−
−
2.5
pF
ICBO
collector-base cut-off current
VCB = −30 V; IE = 0
−
−
−100
nA
ICEO
collector-emitter cut-off current
VCB = −30 V; IB = 0; Tj = 150 °C
−
−
−10
µA
IEBO
emitter-base cut-off current
VEB = −4 V; IC = 0
−
−
−100
nA
hFE
DC current gain
VCE = −6 V; IC = −1 mA
120
−
−
VCEsat
saturation voltage
IC = −50 mA; IB = −5 mA; note 1
−
−
−200
mV
Cc
collector capacitance
VCB = −12 V; IE = ie = 0; f = 1 MHz
−
−
2.2
pF
fT
transition frequency
VCE = −12 V; IC = −2 mA; f = 100 MHz 100
−
−
MHz
TR2 (PNP)
Note
1. Device mounted on an FR4 printed-circuit board.
APPLICATION INFORMATION
4
handbook, halfpage
3
5
RBE(ext)
RB(ext)
6
R1
2
R2
1
MHC182
Fig.3 Typical power management circuit.
2002 Apr 09
4
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistor; PNP
general purpose transistor
PUMF11
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
v M A
4
5
Q
pin 1
index
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT363
2002 Apr 09
REFERENCES
IEC
JEDEC
EIAJ
SC-88
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistor; PNP
general purpose transistor
PUMF11
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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that is open for acceptance or the grant, conveyance or
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Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
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Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
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national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2002 Apr 09
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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© NXP B.V. 2009
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp7
Date of release: 2002 Apr 09
Document order number: 9397 750 09388