DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMD48 NPN/PNP resistor-equipped transistors Product Specification 1999 Apr 22 Philips Semiconductors Product Specification NPN/PNP resistor-equipped transistors PUMD48 FEATURES • Transistors with different polarity and built-in bias resistors R1 (typ. 47 and 47 kΩ) and R2 (typ. 2.2 and 47 kΩ) 6 handbook, halfpage 6 5 5 4 4 R1 R2 TR2 TR1 • No mutual interference between the transistors R2 1 • Simplification of circuit design 2 Top view • Reduces number of components and board space. R1 3 MAM343 1 2 3 Fig.1 Simplified outline (SC-88) and symbol. APPLICATIONS PINNING • Especially suitable for space reduction in interface and driver circuits PIN • Inverter circuit configurations without use of external resistors. 2, 5 6, 3 DESCRIPTION 1, 4 emitter TR1; TR2 2, 5 base TR1; TR2 6, 3 collector TR1; TR2 1, 4 MBK120 MARKING DESCRIPTION NPN/PNP resistor-equipped transistors in an SC-88 plastic package. 1999 Apr 22 Fig.2 Equivalent inverter symbol. TYPE NUMBER PUMD48 2 MARKING CODE 4t8 Philips Semiconductors Product Specification NPN/PNP resistor-equipped transistors PUMD48 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 10 V VI input voltage TR1 positive − +40 V negative − −10 V positive − +5 V negative − −12 V input voltage TR2 IO output current (DC) − 100 mA ICM peak collector current − 100 mA Ptot total power dissipation − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C − 300 mW Tamb ≤ 25 °C; note 1 Per device Ptot total power dissipation Tamb ≤ 25 °C Notes 1. Refer to SC-88 standard mounting conditions. 1999 Apr 22 3 Philips Semiconductors Product Specification NPN/PNP resistor-equipped transistors PUMD48 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS VALUE UNIT 416 K/W thermal resistance from junction to ambient note 1 Note 1. Refer to SC-88 standard mounting conditions. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor; for the PNP transistor with negative polarity ICBO collector cut-off current IE = 0; VCB = 50 V − − 100 nA ICEO collector cut-off current IB = 0; VCE = 30 V − − 1 µA IB = 0; VCE = 30 V; Tj = 150 °C − − 50 µA µA Transistor TR1 (NPN) IEBO emitter cut-off current IC = 0; VEB = 5 V − − 90 hFE DC current gain IC = 5 mA; VCE = 5 V 80 − − VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − − 150 mV Vi(off) input-off voltage IC = 100 µA; VCE = 5 V − 1.2 0.8 V Vi(on) input-on voltage IC = 2 mA; VCE = 0.3 V 3 1.6 − V R1 input resistor 33 47 61 kΩ R2 ------R1 resistor ratio 0.8 1 1.2 Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − − 2.5 pF µA Transistor TR2 (PNP) IEBO emitter cut-off current IC = 0; VEB = −5 V − − 180 hFE DC current gain IC = −10 mA; VCE = −5 V 100 − − VCEsat collector-emitter saturation voltage IC = −5 mA; IB = −0.25 mA − − −100 mV Vi(off) input-off voltage IC = −100 µA; VCE = −5 V − −0.6 −0.5 V Vi(on) input-on voltage IC = −5 mA; VCE = −0.3 V −1.1 −0.75 − V R1 input resistor 1.54 2.2 2.86 kΩ R2 ------R1 resistor ratio 17 21 26 Cc collector capacitance − − 3 1999 Apr 22 IE = ie = 0; VCB = −10 V; f = 1 MHz 4 pF Philips Semiconductors Product Specification NPN/PNP resistor-equipped transistors MDA972 10−1 handbook, halfpage MDA973 103 handbook, halfpage PUMD48 (2) (1) hFE VCEsat (V) (3) 102 (1) (2) (3) 10 1 10−1 1 10 IC (mA) 10−2 −1 10 102 1 TR1 (NPN); VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. TR1 (NPN); IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. Fig.3 Fig.4 DC current gain as a function of collector current; typical values. MDA975 10 10 102 Collector-emitter saturation voltage as a function of collector current; typical values. MDA974 102 handbook, halfpage handbook, halfpage IC (mA) Vi(on) (V) Vi(off) (V) 10 (1) (2) 1 (3) (1) 1 (3) (2) 10−1 10−2 10−1 1 IC (mA) 10−1 10−1 10 TR1 (NPN); VCE = 5 V. (1) Tamb = −40 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. TR1 (NPN); VCE = 0.3 V. (1) Tamb = −40 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.5 Fig.6 Input-off voltage as a function of collector current; typical values. 1999 Apr 22 5 1 10 IC (mA) 102 Input-on voltage as a function of collector current; typical values. Philips Semiconductors Product Specification NPN/PNP resistor-equipped transistors MDA977 103 handbook, halfpage (1) hFE PUMD48 MDA976 −103 handbook, halfpage (2) VCEsat (mV) (3) 102 −102 (1) 10 (3) (2) 1 −10−1 −1 −10 IC (mA) −10 −10−1 −102 −1 TR2 (PNP); VCE = −5 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. TR2 (PNP); IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. Fig.7 Fig.8 DC current gain as a function of collector current; typical values. MDA979 −104 handbook, halfpage Vi(on) (mV) (mV) −102 MDA978 −103 (1) IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values. −104 andbook, halfpage Vi(off) −103 −10 (1) (2) (2) (3) (3) −102 −10−2 −10−1 −1 IC (mA) −102 −10−1 −10 −1 −10 IC (mA) −102 TR2 (PNP); VCE = −5 V. (1) Tamb = −40 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. TR2 (PNP); VCE = −0.3 V. (1) Tamb = −40 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.9 Fig.10 Input-on voltage as a function of collector current; typical values. Input-off voltage as a function of collector current; typical values. 1999 Apr 22 6 Philips Semiconductors Product Specification NPN/PNP resistor-equipped transistors PUMD48 PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 v M A 4 5 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 1999 Apr 22 REFERENCES IEC JEDEC EIAJ SC-88 7 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product Specification NPN/PNP resistor-equipped transistors PUMD48 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 22 8 Philips Semiconductors Product Specification NPN/PNP resistor-equipped transistors NOTES 1999 Apr 22 9 PUMD48 Philips Semiconductors Product Specification NPN/PNP resistor-equipped transistors NOTES 1999 Apr 22 10 PUMD48 Philips Semiconductors Product Specification NPN/PNP resistor-equipped transistors NOTES 1999 Apr 22 11 PUMD48 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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