PHILIPS PUMD48

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
PUMD48
NPN/PNP resistor-equipped
transistors
Product Specification
1999 Apr 22
Philips Semiconductors
Product Specification
NPN/PNP resistor-equipped transistors
PUMD48
FEATURES
• Transistors with different polarity
and built-in bias resistors R1
(typ. 47 and 47 kΩ) and
R2 (typ. 2.2 and 47 kΩ)
6
handbook, halfpage
6
5
5
4
4
R1
R2
TR2
TR1
• No mutual interference between
the transistors
R2
1
• Simplification of circuit design
2
Top view
• Reduces number of components
and board space.
R1
3
MAM343
1
2
3
Fig.1 Simplified outline (SC-88) and symbol.
APPLICATIONS
PINNING
• Especially suitable for space
reduction in interface and driver
circuits
PIN
• Inverter circuit configurations
without use of external resistors.
2, 5
6, 3
DESCRIPTION
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
6, 3
collector
TR1; TR2
1, 4
MBK120
MARKING
DESCRIPTION
NPN/PNP resistor-equipped
transistors in an SC-88 plastic
package.
1999 Apr 22
Fig.2
Equivalent inverter
symbol.
TYPE NUMBER
PUMD48
2
MARKING
CODE
4t8
Philips Semiconductors
Product Specification
NPN/PNP resistor-equipped transistors
PUMD48
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
VCBO
collector-base voltage
open emitter
−
50
V
VCEO
collector-emitter voltage
open base
−
50
V
VEBO
emitter-base voltage
open collector
−
10
V
VI
input voltage TR1
positive
−
+40
V
negative
−
−10
V
positive
−
+5
V
negative
−
−12
V
input voltage TR2
IO
output current (DC)
−
100
mA
ICM
peak collector current
−
100
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
−
300
mW
Tamb ≤ 25 °C; note 1
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
Notes
1. Refer to SC-88 standard mounting conditions.
1999 Apr 22
3
Philips Semiconductors
Product Specification
NPN/PNP resistor-equipped transistors
PUMD48
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
VALUE
UNIT
416
K/W
thermal resistance from junction to ambient note 1
Note
1. Refer to SC-88 standard mounting conditions.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
ICBO
collector cut-off current
IE = 0; VCB = 50 V
−
−
100
nA
ICEO
collector cut-off current
IB = 0; VCE = 30 V
−
−
1
µA
IB = 0; VCE = 30 V; Tj = 150 °C
−
−
50
µA
µA
Transistor TR1 (NPN)
IEBO
emitter cut-off current
IC = 0; VEB = 5 V
−
−
90
hFE
DC current gain
IC = 5 mA; VCE = 5 V
80
−
−
VCEsat
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
−
−
150
mV
Vi(off)
input-off voltage
IC = 100 µA; VCE = 5 V
−
1.2
0.8
V
Vi(on)
input-on voltage
IC = 2 mA; VCE = 0.3 V
3
1.6
−
V
R1
input resistor
33
47
61
kΩ
R2
------R1
resistor ratio
0.8
1
1.2
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz −
−
2.5
pF
µA
Transistor TR2 (PNP)
IEBO
emitter cut-off current
IC = 0; VEB = −5 V
−
−
180
hFE
DC current gain
IC = −10 mA; VCE = −5 V
100
−
−
VCEsat
collector-emitter saturation voltage IC = −5 mA; IB = −0.25 mA
−
−
−100
mV
Vi(off)
input-off voltage
IC = −100 µA; VCE = −5 V
−
−0.6
−0.5
V
Vi(on)
input-on voltage
IC = −5 mA; VCE = −0.3 V
−1.1
−0.75
−
V
R1
input resistor
1.54
2.2
2.86
kΩ
R2
------R1
resistor ratio
17
21
26
Cc
collector capacitance
−
−
3
1999 Apr 22
IE = ie = 0; VCB = −10 V;
f = 1 MHz
4
pF
Philips Semiconductors
Product Specification
NPN/PNP resistor-equipped transistors
MDA972
10−1
handbook, halfpage
MDA973
103
handbook, halfpage
PUMD48
(2)
(1)
hFE
VCEsat
(V)
(3)
102
(1)
(2)
(3)
10
1
10−1
1
10
IC (mA)
10−2 −1
10
102
1
TR1 (NPN); VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
TR1 (NPN); IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.3
Fig.4
DC current gain as a function of collector
current; typical values.
MDA975
10
10
102
Collector-emitter saturation voltage as a
function of collector current; typical values.
MDA974
102
handbook, halfpage
handbook, halfpage
IC (mA)
Vi(on)
(V)
Vi(off)
(V)
10
(1)
(2)
1
(3)
(1)
1
(3) (2)
10−1
10−2
10−1
1
IC (mA)
10−1
10−1
10
TR1 (NPN); VCE = 5 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
TR1 (NPN); VCE = 0.3 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.5
Fig.6
Input-off voltage as a function of collector
current; typical values.
1999 Apr 22
5
1
10
IC (mA)
102
Input-on voltage as a function of collector
current; typical values.
Philips Semiconductors
Product Specification
NPN/PNP resistor-equipped transistors
MDA977
103
handbook, halfpage
(1)
hFE
PUMD48
MDA976
−103
handbook, halfpage
(2)
VCEsat
(mV)
(3)
102
−102
(1)
10
(3) (2)
1
−10−1
−1
−10
IC (mA)
−10
−10−1
−102
−1
TR2 (PNP); VCE = −5 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
TR2 (PNP); IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.7
Fig.8
DC current gain as a function of collector
current; typical values.
MDA979
−104
handbook, halfpage
Vi(on)
(mV)
(mV)
−102
MDA978
−103
(1)
IC (mA)
Collector-emitter saturation voltage as a
function of collector current; typical values.
−104
andbook, halfpage
Vi(off)
−103
−10
(1)
(2)
(2)
(3)
(3)
−102
−10−2
−10−1
−1
IC (mA)
−102
−10−1
−10
−1
−10
IC (mA)
−102
TR2 (PNP); VCE = −5 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
TR2 (PNP); VCE = −0.3 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.9
Fig.10 Input-on voltage as a function of collector
current; typical values.
Input-off voltage as a function of collector
current; typical values.
1999 Apr 22
6
Philips Semiconductors
Product Specification
NPN/PNP resistor-equipped transistors
PUMD48
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
v M A
4
5
Q
pin 1
index
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT363
1999 Apr 22
REFERENCES
IEC
JEDEC
EIAJ
SC-88
7
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product Specification
NPN/PNP resistor-equipped transistors
PUMD48
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 22
8
Philips Semiconductors
Product Specification
NPN/PNP resistor-equipped transistors
NOTES
1999 Apr 22
9
PUMD48
Philips Semiconductors
Product Specification
NPN/PNP resistor-equipped transistors
NOTES
1999 Apr 22
10
PUMD48
Philips Semiconductors
Product Specification
NPN/PNP resistor-equipped transistors
NOTES
1999 Apr 22
11
PUMD48
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© Philips Electronics N.V. 1999
SCA63
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Printed in The Netherlands
115002/00/01/pp12
Date of release: 1999 Apr 22
Document order number:
9397 750 05248