2N7002KU Main Product Characteristics: VDSS 60V RDS(on) 3Ω(max.) ID 0.3A SOT-23 Marking and pin Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery ESD Rating：2000V HBM 150℃ operating temperature Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute max Rating: Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① 0.3 IDM Pulsed Drain Current② 1.2 PD @TC = 25°C Power Dissipation③ 0.63 W VDS Drain-Source Voltage 60 V VGS Gate-to-Source Voltage ± 20 V -55 to +150 °C TJ TSTG Operating Junction and Storage Temperature Range A Thermal Resistance Symbol Characterizes RθJA Junction-to-ambient (t ≤ 10s) ④ ©Silikron Semiconductor CO., LTD. 2012.04.20 www.silikron.com Typ. Max. Units — 200 ℃/W Version: 1.0 page 1 of 7 2N7002KU Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Parameter V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) Min. Typ. Max. Units 60 — — V — 1.6 3 — — 3.5 Gate threshold voltage 1 — 2.5 V VDS = VGS, ID = 250μA IDSS Drain-to-Source leakage current — — 1 μA VDS = 60V,VGS = 0V IGSS Gate-to-Source forward leakage — — ±100 nA VGS=±5V,VDS=0V — — ±10 uA VGS=±20V,VDS=0V td(on) Turn-on delay time — — 25 td(off) Turn-Off delay time — — 45 ID=0.2A,RGEN=10Ω Ciss Input capacitance — 40 — VGS = 0V Coss Output capacitance — 16.6 — Crss Reverse transfer capacitance — 9.5 — Ω ns pF Conditions VGS = 0V, ID = 250μA VGS=10V, ID=0.5A VGS=5V, ID=0.05A VGS=10V, VDS=30V, VDS = 25V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol IS ISM VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage ©Silikron Semiconductor CO., LTD. Min. Typ. — — 0.3 A — — 1.2 A — — 1.3 V 2012.04.20 www.silikron.com Max. Units Version: 1.0 Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=0.2A, VGS=0V page 2 of 7 2N7002KU Test circuits and Waveforms Switch Waveforms: Notes: ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. ©Silikron Semiconductor CO., LTD. 2012.04.20 www.silikron.com Version: 1.0 page 3 of 7 2N7002KU Typical electrical and thermal characteristics Figure 1. Power Dissipation Vs. Case Temperature Figure 2.Typical Capacitance Vs. Drain-to-Source Voltage Figure3. Maximum Effective Transient Thermal Impedance, Junction-to-Case ©Silikron Semiconductor CO., LTD. 2012.04.20 www.silikron.com Version: 1.0 page 4 of 7 2N7002KU Mechanical Data： ©Silikron Semiconductor CO., LTD. 2012.04.20 www.silikron.com Version: 1.0 page 5 of 7 2N7002KU Ordering and Marking Information Device Marking: U72 Package (Available) SOT-23 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tape Tapes/Inner Box Units/Inner Inner Box Boxes/Carton Box Units/ Carton Box SOT-23 3000 10 30000 120000 4 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) High Temperature Gate Bias(HTGB) Tj=125℃ to 150℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices Tj=150℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices ©Silikron Semiconductor CO., LTD. 2012.04.20 www.silikron.com Version: 1.0 page 6 of 7 2N7002KU ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all Silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of Silikron Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product that you intend to use. This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice. Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Suzhou Silikron Semiconductor Corp. Building 11A Suchun Industrial Square, 428# Xinglong Street, Suzhou P.R. China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: [email protected] ©Silikron Semiconductor CO., LTD. 2012.04.20 www.silikron.com Version: 1.0 page 7 of 7