KEC 2N7002KU

SEMICONDUCTOR
2N7002KU
TECHNICAL DATA
N Channel MOSFET
INTERFACE AND SWITCHING APPLICATION.
FEATURES
E
・ESD Protected 2000V.(Human Body Model)
M
B
M
・High density cell design for low RDS(ON).
D
3
1
L
C
G
A
J
2
・Voltage controlled small signal switch.
H
N
K
N
DIM
A
B
C
D
E
G
H
J
K
L
M
N
MILLIMETERS
_ 0.20
2.00 +
_ 0.15
1.25 +
_ 0.10
0.90 +
0.3+0.10/-0.05
_ 0.20
2.10 +
0.65
0.15+0.1/-0.06
1.30
0.00~0.10
0.70
0.42
0.10 MIN
1. SOURCE
2. GATE
3. DRAIN
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Continuous
ID
300
Pulsed (Note 1)
IDP
1000
Drain Power Dissipation (Note 2)
PD
270
mW
Junction Temperature
Tj
150
℃
Tstg
-55~150
℃
RthJA
460
℃/W
Drain Current
USM
UNIT
mA
Storage Temperature Range
Thermal Resistance, Junction to Ambient
(Note 2)
Note 1) Pulse Width≦10㎲, Duty Cycle≦1%
Note 2) Surface Mounted on 2 ×2 FR4 Board
Marking
EQUIVALENT CIRCUIT
D
Lot No.
Type Name
KU
G
S
2013. 7. 19
Revision No : 1
1/4
2N7002KU
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT.
Static
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=10μA
60
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0V
-
-
1
μA
Gate-Body Leakage, Forward
IGSSF
VGS=20V, VDS=0V
-
-
10
μA
Gate-Body Leakage, Reverse
IGSSR
VGS=-20V, VDS=0V
-
-
-10
μA
Vth
VDS=VGS, ID=250μA
V
Gate Threshold Voltage
1.0
-
2.0
VGS=10V, ID=300mA
(Note 3)
-
1.2
1.5
VGS=4.5V, ID=250mA
(Note 3)
-
1.45
1.9
250
-
-
mS
-
0.9
1.2
V
-
20
-
-
4
-
-
8
-
-
9
-
-
43
-
RDS(ON)
Drain-Source ON Resistance
Forward Transconductance
gFS
VDS=10V, ID=300mA
Drain-Source Diode Forward Voltage
VSD
VGS=0V, IS=300mA
Ω
Dynamic
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
VDS=25V, VGS=0V, f=1MHz
ton
Turn-On Time
VDD=30V, ID=300mA, VGS=10V (Note 3)
Switching Time
toff
Turn-Off Time
pF
ns
Note 3) Pulse Test : Pulse Width≦80㎲, Duty Cycle≦1%
SWITCHING TIME TEST CIRCUIT
ton
td(on)
VDD
td(off)
tr
90%
toff
tf
90%
RL
VIN
VOUT
D
OUTPUT
VOUT 10%
VGS
INVERTED
G
90%
50%
50%
S
INPUT
VIN 10%
PULSE WIDTH
2013. 7. 19
Revision No : 1
2/4
2N7002KU
Fig 1. ID - VDS
COMMON SOURCE
Ta = 25 C
COMMON SOURCE
Ta = 25 C
5V
7V
10V
1.2
6V
ON - RESISTANCE RDS ( )
DRAIN CURRENT ID (A)
1.5
Fig 2. RDS(ON) - ID
6.0
4V
0.9
0.6
VGS = 3V
0.3
5.0
4.0
VGS = 3V
3.0
2.0
4V
1.0
10V
0.0
0.0
1.0
2.0
3.0
4.0
0.0
0.1
5.0
0.2
DRAIN-SOURCE VOLTAGE VDS (V)
0.3
NORMALIZED GATE SOURCE
THRESHOLDVOLTAGE Vth (V)
NORMALIZED ON - RESISTANCE
RDS ( )
1.4
2.5
2.0
1.5
1.0
VGS=10V
0.0
-100
-50
0
50
100
Common Source
VGS=VDS
ID=250 µA
1.2
1.0
0.8
0.6
0.4
-100
150
JUNCTION TEMPERATURE Tj ( C)
-50
REVERSE DRAIN CURRENT I S (A)
DRAIN CURRENT ID (A)
VDS =10V
0.8
0.6
0.4
125 C
0.2
25 C
0.0
2
3
4
DRAIN-SOURCE VOLTAGE VGS (V)
Revision No : 1
50
100
150
Fig 6. I S - VSD
1.0
1
0
JUNCTION TEMPERATURE Tj ( C)
Fig 5. ID - VGS
0
0.6
Fig 4. Vth - Tj
3.0
0.5
0.5
DRAIN-CURRENT ID (A)
Fig 3. RDS(ON) - Tj
2013. 7. 19
0.4
5
1
125 C
25 C
0.1
0.01
0.0
0.5
1.0
1.5
2.0
BODY DIODE FORWARD VOLTAGE VSD (V)
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2N7002KU
Fig 7. C - VDS
C iss
COMMON SOURCE
VGS =0V
f=1MHz
Ta=25 C
C oss
10
C rss
1
0
5
10
15
20
25
30
DRAIN CURRENT I D (A)
100
CAPACITANCE C (pF)
Fig 8. Safe Operation Area
101
100
10‫ט‬
100‫ט‬
10-1
1ms
10ms
Operation in this
area is limited by RDS(ON)
10-2
Tc= 25 C
Tj = 150 C
Single nonrepetitive pulse
10-3
10-1
100
DC
101
102
DRAIN-SOURCE VOLTAGE V DS (V)
DRAIN-SOURCE VOLTAGE V DS (V)
DRAIN POWER DISSIPATION P D (mW)
Fig 9. PD - Ta
350
300
250
200
150
100
50
0
0
20
40
60
80
100
120
140
160
AMBIENT TEMPERATURE Ta ( C)
2013. 7. 19
Revision No : 1
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