SSF1020D
Main Product Characteristics:
VDSS
100V
RDS(on)
16mΩ(typ.)
ID
60A
DPAK
Schematic diagram
Assignment
Features and Benefits:
Marking and pin
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
60
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
50
IDM
Pulsed Drain Current②
240
Power Dissipation③
143
W
Linear Derating Factor
2.0
W/°C
VDS
Drain-Source Voltage
100
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=0.3mH
240
mJ
IAS
Avalanche Current @ L=0.3mH
39
A
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to + 175
°C
PD @TC = 25°C
©Silikron Semiconductor CO.,LTD.
2012.02.25
www.silikron.com
Version : 2.2
A
page 1 of 8
SSF1020D
Thermal Resistance
Symbol
Characterizes
Typ.
Max.
Units
RθJC
Junction-to-case③
1.05
—
℃/W
RθJA
Junction-to-ambient
—
62
℃/W
④
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Parameter
Min.
V(BR)DSS
Drain-to-Source breakdown voltage
100
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
Typ.
Max.
Units
—
—
V
—
16
20
mΩ
2.0
3.0
4.0
—
2.0
—
—
—
1
—
—
10
—
—
100
—
—
-100
Total gate charge
—
90
—
Qgs
Gate-to-Source charge
—
14
—
Qgd
Gate-to-Drain("Miller") charge
—
24
—
td(on)
Turn-on delay time
—
18.2
—
tr
Rise time
—
15.6
—
td(off)
Turn-Off delay time
—
70.5
—
tf
Fall time
—
13.8
—
Ciss
Input capacitance
—
3150
—
Coss
Output capacitance
—
300
—
Crss
Reverse transfer capacitance
—
240
—
V
μA
nA
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 30A
VDS = VGS, ID = 250μA
TJ = 125℃
VDS = 100V,VGS = 0V
TJ = 150°C
VGS =20V
VGS = -20V
ID = 30A,
nC
VDS=30V,
VGS = 10V
VGS=10V, VDS=30V,
ns
RL=15Ω,
RGEN=2.5Ω
VGS = 0V
pF
VDS = 25V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
60
A
—
—
240
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
—
1.3
V
IS=30A, VGS=0V
trr
Reverse Recovery Time
—
57
—
ns
TJ = 25°C, IF =60A,
Qrr
Reverse Recovery Charge
—
107
—
nC
di/dt = 100A/μs
©Silikron Semiconductor CO.,LTD.
2012.02.25
www.silikron.com
Version : 2.2
page 2 of 8
SSF1020D
Test circuits and Waveforms
Switch Waveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
⑥ The maximum current rating is limited by bond-wires.
©Silikron Semiconductor CO.,LTD.
2012.02.25
www.silikron.com
Version : 2.2
page 3 of 8
SSF1020D
Typical electrical and thermal characteristics
Figure 1,Transfer Characteristic
Figure 2,Capacitance
Figure 3,On Resistance vs. Junction
Figure 4,Breakdown Voltage vs. Junction
Temperature
Temperature
©Silikron Semiconductor CO.,LTD.
2012.02.25
www.silikron.com
Version : 2.2
page 4 of 8
SSF1020D
Figure 5,Gate Charge
Figure 7. Safe Operation Area
Figure 6,Source-Drain Diode Forward Voltage
Figure 8. Max Drain Current vs. Junction
Temperature
Figure 9. Transient Thermal Impedance Curve
©Silikron Semiconductor CO.,LTD.
2012.02.25
www.silikron.com
Version : 2.2
page 5 of 8
SSF1020D
Mechanical Data：
DPAK PACKAGE OUTLINE DIMENSION
Symbol
A
A1
B
B1
C
D
D1
D2
E
E1
e
H
F
K
V2
Dimension In Millimeters
Nom
Max
2.300
2.380
1.010
1.110
0.760
0.810
5.330
5.460
0.510
0.560
6.100
6.200
5.350 (REF)
2.900 (REF)
6.500
6.600
6.700
4.83 (REF)
2.186
2.286
2.386
9.800
10.100
10.400
1.400
1.500
1.700
1.600 (REF)
Min
2.200
0.910
0.710
5.130
0.460
6.000
©Silikron Semiconductor CO.,LTD.
Min
0.087
0.036
0.028
0.202
0.018
0.236
0.256
0.086
0.386
0.055
0
Dimension In Inches
Nom
0.091
0.040
0.030
0.210
0.020
0.240
0.211 (REF)
0.114 (REF)
0.260
0.190 (REF)
0.090
0.398
0.059
0.063 (REF)
Max
0.094
0.044
0.032
0.215
0.022
0.244
0.264
0.094
0.409
0.067
0
8 (REF)
8 (REF)
2012.02.25
www.silikron.com
Version : 2.2
page 6 of 8
SSF1020D
Ordering and Marking Information
Device Marking: SSF1020D
Package (Available)
DPAK
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Option1：
Package Units/ Tubes/Inner
Type
Tube Box
TO-252
80
50
Units/Inner
Box
4000
Inner
Boxes/Carton
Box
10
Units/Carton
Box
Inner
Boxes/Carton
Box
7
Units/Carton
Box
Inner
Boxes/Carton
Box
10
Units/Carton
Box
40000
Option2：
Package Units/ Tapes/Inner
Type
Tape Box
TO-252
2500
2
Units/Inner
Box
5000
35000
Option3：
Package Units/ Tapes/Inner
Type
Tape Box
TO-252
2500
1
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Units/Inner
Box
2500
Duration
Sample Size
Tj=125℃ to 175℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ or 175℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO.,LTD.
2012.02.25
www.silikron.com
Version : 2.2
25000
page 7 of 8
SSF1020D
ATTENTION:
■
■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause
damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for
safe design, redundant design, and structural design.
In the event that any or all Silikron products(including technical data, services) described or contained herein are
controlled under any of applicable local export control laws and regulations, such products must not be exported
without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical,
including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior
written permission of Silikron Semiconductor CO.,LTD.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for
volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or
implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
Silikron product that you intend to use.
This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change
without notice.
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Suzhou Silikron Semiconductor Corp.
Building 11A Suchun Industrial Square, 428# Xinglong Street, Suzhou P.R. China
TEL: (86-512) 62560688
FAX: (86-512) 65160705
E-mail: [email protected]
©Silikron Semiconductor CO.,LTD.
2012.02.25
www.silikron.com
Version : 2.2
page 8 of 8