SSFT3904U
Main Product Characteristics:
VDSS
35V
RDS(on)
3.0mohm(typ.)
ID
110A
SSFT3904U
TO220
Schematic diagram
Assignment
Features and Benefits:
Marking and pin
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
110
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
80
IDM
Pulsed Drain Current②
440
Power Dissipation③
100
W
Linear Derating Factor
0.55
W/°C
VDS
Drain-Source Voltage
35
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=0.1mH
320
mJ
IAS
Avalanche Current @ L=0.1mH
80
A
-55 to + 175
°C
PD @TC = 25°C
TJ
TSTG
Operating Junction and Storage Temperature Range
©Silikron Semiconductor CO., LTD.
2011.11.05
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Version: 1.1
Units
A
page 1 of 8
SSFT3904U
Thermal Resistance
Symbol
Characterizes
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case③
—
1.5
℃/W
Junction-to-ambient (t ≤ 10s) ④
—
62
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
40
℃/W
Electrical Characterizes @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
unless otherwise specified
Min.
Typ.
Max.
Units
35
—
—
V
—
3
4
—
3.9
—
—
5
6
—
5.8
—
1
—
3
—
1.1
—
—
—
1
—
—
50
—
—
100
-100
—
—
Total gate charge
—
57
—
Qgs
Gate-to-Source charge
—
17
—
Qgd
Gate-to-Drain("Miller") charge
—
26
—
td(on)
Turn-on delay time
—
14.5
—
tr
Rise time
—
73.9
—
td(off)
Turn-Off delay time
—
99.7
—
tf
Fall time
—
107.1
—
Ciss
Input capacitance
—
5520
—
Coss
Output capacitance
—
623
—
Crss
Reverse transfer capacitance
—
594
—
mΩ
mΩ
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID =30A
TJ = 125℃
VGS=4.5V,ID =16A
TJ = 125℃
V
μA
nA
VDS = VGS, ID = 250μA
TJ = 125℃
VDS = 35V,VGS = 0V
TJ = 125°C
VGS =20V
VGS = -20V
VDS=15V,
nC
ID=30A,
VGS=10V
ns
VGS=4.5V, VDS=15V,
RGEN=4.7Ω, ID=30A
VGS = 0V
pF
VDS = 15V
ƒ = 600KHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
110
A
—
—
440
A
Conditions
MOSFET symbol
showing
the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.67
1.3
V
IS=2.1A, VGS=0V
trr
Reverse Recovery Time
—
22.1
—
ns
TJ = 25°C, IF =30A, di/dt =
Qrr
Reverse Recovery Charge
—
8.7
—
nC
100A/μs
©Silikron Semiconductor CO., LTD.
2011.11.05
www.silikron.com
Version:1.1
page 2 of 8
SSFT3904U
Test circuits and Waveforms
Switch Waveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
©Silikron Semiconductor CO., LTD.
2011.11.05
www.silikron.com
Version:1.1
page 3 of 8
SSFT3904U
Typical electrical characteristics
Figure 1: Typical Output Characteristics
Figure 2: Typical Transfer Characteristics
IS,source to drain current(A)
1.E+02
ID=50A
1.E+01
125℃
1.E+00
1.E-01
1.E-02
25℃
1.E-03
1.E-04
1.E-05
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1
VSD,source to drain voltage(V)
Figure 3: On-Resistance vs. Gate-Source
Figure 4: Body-Diode Characteristics
Voltage
Figure 5: Gate-Charge Characteristics
©Silikron Semiconductor CO., LTD.
Figure 6: Capacitance Characteristics
2011.11.05
www.silikron.com
Version:1.1
page 4 of 8
SSFT3904U
Typical thermal characteristics
Figure 7: Normalized Thermal transient Impedance Curve
©Silikron Semiconductor CO., LTD.
2011.11.05
www.silikron.com
Version:1.1
page 5 of 8
SSFT3904U
Mechanical Data：
TO220 PACKAGE OUTLINE DIMENSION_GN
E
ФP
A
ϴ1
D
D2
ФP1
ϴ3
ϴ2
D1
b1
b
A1
ϴ4
L
c
e
Symbol
A
A1
b
b1
c
D
D1
D2
E
E1
ФP
ФP1
e
L
ϴ1
ϴ2
ϴ3
ϴ4
Dimension In Millimeters
Min
Nom
Max
1.300
2.200
2.400
2.600
1.270
1.270
1.370
1.470
0.500
15.600
28.700
9.150
9.900
10.000
10.100
10.160
3.600
1.500
2.54BSC
12.900
13.100
13.300
0
7
-
70
-
0
©Silikron Semiconductor CO., LTD.
0
3
3
-
2011.11.05
www.silikron.com
E1
Dimension In Inches
Nom
Max
0.051
0.094
0.102
0.050
0.054
0.058
0.020
0.614
1.130
0.360
0.394
0.398
0.400
0.142
0.059
0.1BSC
0.508
0.516
0.524
0
7
Min
0.087
0.050
0.390
-
5
0
1
0
70
-
0
90
0
50
7
3
Version:1.1
page 6 of 8
SSFT3904U
Ordering and Marking Information
Device Marking: SSFT3904U
Package (Available)
TO220
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Package
Type
TO220
Units/
Tube
Tubes/Inner
Box
50
20
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Units/Inner Inner
Box
Boxes/Carton
Box
1000
6
Duration
Sample Size
Tj=125℃ to 175℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
TJ=125℃ to 175℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO., LTD.
2011.11.05
www.silikron.com
Version:1.1
Units/Carton
Box
6000
page 7 of 8
SSFT3904U
ATTENTION:
■
■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
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semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to
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Any and all information described or contained herein are subject to change without notice due to
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without notice.
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[email protected]
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©Silikron Semiconductor CO., LTD.
2011.11.05
www.silikron.com
Version:1.1
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