SSF6025
Main Product Characteristics:
VDSS
-60V
RDS(on)
12mΩ (typ.)
ID
-60A
TO-220
Marking and pin
Schematic diagram
Assignment
Features and Benefits:
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
High Power and current handing capability
Fully Avalanche Rated
Description:
It utilizes the advanced trench processing techniques to achieve extremely low on resistance and low gate
charge. These features combine to make this design an extremely efficient and reliable device for use in PWM,
load switching and a wide variety of other applications.
Absolute max Rating:
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
-60
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
-50
IDM
Pulsed Drain Current②
-240
ISM
Pulsed Source Current (Body Diode)②
-240
PD @TC = 25°C
Power Dissipation③
166
W
VDS
Drain-Source Voltage
-60
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=0.3mH
300
mJ
IAS
Single Pulse Avalanche Current @ L=0.3mH
44
A
TJ
Operating Junction and
TSTG
Storage Temperature Range
-55 to + 150
°C
©Silikron Semiconductor CO.,LTD.
2015.01.23
www.silikron.com
Preliminary Version: 1.0
A
page 1 of 6
SSF6025
Thermal Resistance
Symbol
Characterizes
RθJA
Junction-to-ambient (t ≤ 10s) ④
RJC
Maximum Junction-to-Case⑤
Value
Unit
62
℃/W
0.75
℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Parameter
Min.
Typ.
Max.
Units
BVDSS
Drain-to-Source breakdown voltage
-60
—
—
V
Static Drain-to-Source
—
12
25
Conditions
VGS = 0V, ID =- 250μA
VGS=-10V,
RDS(on)
mΩ
on-resistance
—
22
—
-2
-2.6
-4
—
—
-1
—
—
-50
Gate-to-Source forward leakage
—
—
100
Gate-to-Source reverse leakage
—
—
-100
Qg
Total gate charge
—
—
170
Qgs
Gate-to-Source charge
—
—
30
Qgd
Gate-to-Drain("Miller") charge
—
—
70
td(on)
Turn-on delay time
—
15.2
—
tr
Rise time
—
23.7
—
td(off)
Turn-Off delay time
—
53.3
—
tf
Fall time
—
12.7
—
Ciss
Input capacitance
—
7456
—
Coss
Output capacitance
—
376
—
Crss
Reverse transfer capacitance
—
293
—
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
ID =- 23A
TJ = 125℃
V
μA
nA
VDS = VGS, ID =-250uA
VDS =-60V,VGS = 0V
TJ = 125°C
VGS =20V
VGS = -20V
ID=-30A,
nC
VDD=-40V,
VGS=-10V
VDD=-30V,ID=-20A,
ns
RL=1.50Ω,RG=3.00Ω,
VGS=-10V
VDS=-25V,
pF
VGS=0V,
f=1MHZ
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Maximum Body-Diode
Continuous Current
Maximum Body-Diode Pulse
Current
Min.
Typ.
Max.
Units
—
-60
—
A
—
-240
—
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
-0.74
-1.2
V
TJ=25ْC,IS=-10A,VGS=0V
trr
Reverse Recovery Time
—
38.2
—
nS
TJ = 25℃, IF =-20A, di/dt =
Qrr
Reverse Recovery Charge
—
62.5
—
nC
100A/μs
©Silikron Semiconductor CO.,LTD.
2015.01.23
www.silikron.com
Version : 1.0
page 2 of 6
SSF6025
Test circuits and Wave forms
EAS Test Circuit:
Gate charge test circuit:
Switching Time Test Circuit:
Switching Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2015.01.23
www.silikron.com
Version : 1.0
page 3 of 6
SSF6025
Mechanical Data：
©Silikron Semiconductor CO.,LTD.
2015.01.23
www.silikron.com
Version : 1.0
page 4 of 6
SSF6025
Ordering and Marking Information
Device Marking: SSF6025
Package (Available)
TO-220
Operating Temperature Range
C : -55 to 150ºC
Devices per Unit
Package Units/ Tubes/Inner
Type
Tube Box
TO-220
50
Units/Inner
Box
20
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
1000
Inner
Boxes/Carton
Box
6
Duration
Sample Size
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃
@ 100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO.,LTD.
2015.01.23
www.silikron.com
Version : 1.0
Units/Carton
Box
6000
page 5 of 6
SSF6025
ATTENTION:
■
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■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
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Any and all information described or contained herein are subject to change without notice due to
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Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Suzhou Silikron Semiconductor Corp.
Building 11A Suchun Industrial Square, 428# Xinglong Street, Suzhou P.R. China
TEL: (86-512) 62560688
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E-mail: [email protected]
©Silikron Semiconductor CO.,LTD.
2015.01.23
www.silikron.com
Version : 1.0
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