PEMD16; PUMD16 NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 47 k Rev. 3 — 28 June 2011 Product data sheet 1. Product profile 1.1 General description NPN/PNP resistor-equipped transistors. Table 1. Product overview Type number Package NXP JEITA PNP/PNP complement NPN/NPN complement PEMD16 SOT666 - PEMB16 PEMH16 PUMD16 SOT363 SC-88 PUMB16 PUMH16 1.2 Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place cost 1.3 Applications Low current peripheral driver Control of IC inputs Replacement of general-purpose transistors in digital applications 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 50 V IO output current - - 100 mA R1 bias resistor 1 (input) 15.4 22 28.6 k R2/R1 bias resistor ratio 1.7 2.1 2.6 PEMD16; PUMD16 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 47 k 2. Pinning information Table 3. Pinning Pin Description Simplified outline 1 GND (emitter) TR1 2 input (base) TR1 3 output (collector) TR2 4 GND (emitter) TR2 5 input (base) TR2 6 output (collector) TR1 6 5 4 Graphic symbol 6 5 R1 4 R2 TR2 1 2 3 TR1 R2 001aab555 1 R1 2 3 006aaa143 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PEMD16 - plastic surface-mounted package; 6 leads SOT666 PUMD16 SC-88 plastic surface-mounted package; 6 leads SOT363 4. Marking Table 5. Type number Marking code[1] PEMD16 5H PUMD16 D1* [1] PEMD16_PUMD16 Product data sheet Marking codes * = placeholder for manufacturing site code All information provided in this document is subject to legal disclaimers. Rev. 3 — 28 June 2011 © NXP B.V. 2011. All rights reserved. 2 of 11 PEMD16; PUMD16 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 47 k 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 5 V VI input voltage TR1 positive - +40 V negative - 7 V - +7 V input voltage TR2 positive negative - 40 V IO output current - 100 mA ICM peak collector current - 100 mA Ptot total power dissipation Tamb 25 C SOT363 [1] - 200 mW SOT666 [1][2] - 200 mW Tstg storage temperature 65 +150 C Tj junction temperature - 150 C Tamb ambient temperature 65 +150 C Per device Ptot PEMD16_PUMD16 Product data sheet total power dissipation Tamb 25 C SOT363 [1] - 300 mW SOT666 [1][2] - 300 mW [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. All information provided in this document is subject to legal disclaimers. Rev. 3 — 28 June 2011 © NXP B.V. 2011. All rights reserved. 3 of 11 PEMD16; PUMD16 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 47 k 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor thermal resistance from junction to ambient Rth(j-a) in free air SOT363 [1] - - 625 K/W SOT666 [1][2] - - 625 K/W SOT363 [1] - - 416 K/W SOT666 [1][2] - - 416 K/W Per device Rth(j-a) thermal resistance from junction to ambient in free air [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. 7. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per transistor; for the PNP transistor with negative polarity PEMD16_PUMD16 Product data sheet ICBO collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 A - - 1 A VCE = 30 V; IB = 0 A; Tj = 150 C - - 50 A IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 120 A hFE DC current gain VCE = 5 V; IC = 5 mA 80 - - VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - 150 mV VI(off) off-state input voltage VCE = 5 V; IC = 100 A - 0.8 0.5 V VI(on) on-state input voltage VCE = 0.3 V; IC = 2 mA 2 1.1 - V R1 bias resistor 1 (input) 15.4 22 28.6 k R2/R1 bias resistor ratio 1.7 2.1 2.6 Cc collector capacitance TR1 (NPN) - - 2.5 pF TR2 (PNP) - - 3 pF VCB = 10 V; IE = ie = 0 A; f = 1 MHz All information provided in this document is subject to legal disclaimers. Rev. 3 — 28 June 2011 © NXP B.V. 2011. All rights reserved. 4 of 11 PEMD16; PUMD16 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 47 k 006aaa174 103 006aaa175 103 (1) hFE VCEsat (mV) (2) (3) 102 102 (2) (1) 10 (3) 1 10−1 1 10 102 10 I C (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 100 C (1) Tamb = 100 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 40 C (3) Tamb = 40 C Fig 1. TR1 (NPN): DC current gain as a function of collector current; typical values Fig 2. 006aaa176 10 102 10 1 I C (mA) TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values 006aaa177 10 VI(off) (V) VI(on) (V) (1) (1) 1 1 (2) (2) (3) (3) 10−1 10−1 1 102 10 10−1 10−2 10−1 I C (mA) VCE = 0.3 V VCE = 5 V (1) Tamb = 40 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 100 C (3) Tamb = 100 C TR1 (NPN): On-state input voltage as a function of collector current; typical values PEMD16_PUMD16 Product data sheet 10 I C (mA) (1) Tamb = 40 C Fig 3. 1 Fig 4. TR1 (NPN): Off-state input voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 28 June 2011 © NXP B.V. 2011. All rights reserved. 5 of 11 PEMD16; PUMD16 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 47 k 006aaa198 103 hFE 006aaa199 −103 (1) VCEsat (mV) (2) (3) 102 −102 (1) (2) (3) 10 1 −10−1 −1 −10 IC (mA) −102 −10 −10−1 VCE = 5 V −1 IC (mA) −102 IC/IB = 20 (1) Tamb = 100 C (1) Tamb = 100 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 40 C (3) Tamb = 40 C Fig 5. −10 TR2 (PNP): DC current gain as a function of collector current; typical values 006aaa200 −104 Fig 6. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values 006aaa201 −104 VI(on) (mV) VI(off) (mV) (1) (2) −103 −103 (3) (1) (2) (3) −102 −10−1 −1 −10 IC (mA) −102 −102 −10−2 VCE = 0.3 V −10−1 (1) Tamb = 40 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 100 C (3) Tamb = 100 C TR2 (PNP): On-state input voltage as a function of collector current; typical values PEMD16_PUMD16 Product data sheet IC (mA) −10 VCE = 5 V (1) Tamb = 40 C Fig 7. −1 Fig 8. TR2 (PNP): Off-state input voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 28 June 2011 © NXP B.V. 2011. All rights reserved. 6 of 11 PEMD16; PUMD16 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 47 k 8. Package outline 2.2 1.8 6 1.1 0.8 5 1.7 1.5 0.45 0.15 4 6 0.6 0.5 5 4 0.3 0.1 2.2 1.35 2.0 1.15 1.7 1.5 pin 1 index 1.3 1.1 pin 1 index 1 2 3 1 0.25 0.10 0.3 0.2 0.65 1.3 3 0.18 0.08 0.27 0.17 1 Dimensions in mm Fig 9. 2 0.5 06-03-16 Package outline SOT363 (SC-88) Dimensions in mm 04-11-08 Fig 10. Package outline SOT666 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number Package Description PEMD16 SOT666 PUMD16 [1] PEMD16_PUMD16 Product data sheet SOT363 Packing quantity 4 mm pitch, 8 mm tape and reel 3000 4000 10000 - -115 - 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 - -165 For further information and the availability of packing methods, see Section 12. [2] T1: normal taping [3] T2: reverse taping All information provided in this document is subject to legal disclaimers. Rev. 3 — 28 June 2011 © NXP B.V. 2011. All rights reserved. 7 of 11 PEMD16; PUMD16 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 47 k 10. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PEMD16_PUMD16 v.3 20110628 Product data sheet - PEMD16_PUMD16 v.2 Modifications: • The format of this document has been redesigned to comply with the new identity guidelines of NXP Semiconductor. • • • Legal texts have been adapted to the new company name where appropriate. Figure 9 “Package outline SOT363 (SC-88)” is updated. Section 11 “Legal information” is updated. PEMD16_PUMD16 v.2 20050607 Product data sheet - PUMD16 v.1 PUMD16 v.1 20031022 Product specification - - PEMD16_PUMD16 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 28 June 2011 © NXP B.V. 2011. All rights reserved. 8 of 11 PEMD16; PUMD16 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 47 k 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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Export might require a prior authorization from national authorities. PEMD16_PUMD16 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 28 June 2011 © NXP B.V. 2011. All rights reserved. 9 of 11 PEMD16; PUMD16 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 47 k Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PEMD16_PUMD16 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 28 June 2011 © NXP B.V. 2011. All rights reserved. 10 of 11 PEMD16; PUMD16 NXP Semiconductors NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 47 k 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 28 June 2011 Document identifier: PEMD16_PUMD16