IRFP22N60K, SiHFP22N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Hard Switching Primary or PFS Switch 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • Low Gate Charge Qg Results in Simple Drive Requirement 0.24 150 Qgs (nC) • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 45 Qgd (nC) 76 Configuration Available RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current Single D • Enhanced Body Diode dV/dt Capability TO-247 • Lead (Pb)-free Available BENEFITS G • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply S D • High Speed Power Switching S G • Motor Drive N-Channel MOSFET ORDERING INFORMATION Package TO-247 IRFP22N60KPbF SiHFP22N60K-E3 IRFP22N60K SiHFP22N60K Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta ID Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery TC = 25 °C dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s V 22 14 A IDM 88 2.9 W/°C EAS 380 mJ IAR 22 A EAR 37 mJ PD 370 W dV/dt 15 V/ns TJ, Tstg - 55 to + 150 Linear Derating Factor Single Pulse Avalanche Energyb UNIT 300d °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 1.5 mH, RG = 25 Ω, IAS = 22 A (see fig. 12). c. ISD ≤ 22 A, dI/dt ≤ 360 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91208 S-81274-Rev. A, 16-Jun-08 www.vishay.com 1 IRFP22N60K, SiHFP22N60K Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 40 Case-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC - 0.34 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS VDS VGS = 0 V, ID = 250 µA MIN. TYP. MAX. UNIT 600 - - V Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance ΔVDS/TJ VGS(th) Reference to 25 °C, ID = 1 VDS = VGS, ID = 250 µA RDS(on) gfs - 0.30 - V/°C 3.0 - 5.0 V nA VGS = ± 30 V - - ± 100 VDS = 600 V, VGS = 0 V - - 50 VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 250 IGSS IDSS mAd ID = 13 Ab VGS = 10 V VDS = 50 V, ID = 13 Ab µA - 0.240 0.280 Ω 11 - - S - 3570 - Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Output Capacitance Coss Effective Output Capacitance Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-Off Delay Time Fall Time VDS = 1.0 V , f = 1.0 MHz VGS = 0 V Coss eff. Total Gate Charge Rise Time VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 tr td(off) VGS = 10 V - 350 - - 36 - - 4710 - VDS = 480 V , f = 1.0 MHz - 92 - VDS = 0 V to 480 V - 180 - - - 150 ID = 22 A, VDS = 480 V see fig. 6 and 13b - - 45 - - 76 - 26 - - 99 - - 48 - - 37 - - - 22 - - 88 - - 1.5 VDD = 300 V, ID = 22 A, RG = 6.2, VGS = 10 V, see fig. 10b tf pF nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time trr Qrr IRRM ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 22 A, VGS = 0 Vb TJ = 25 °C - 590 890 TJ = 125 °C - 670 1010 - 7.2 11 - 8.5 13 - 26 39 TJ = 25 °C IF = 22 A, dI/dt = 100 A/µsb TJ =1 25 °C TJ = 25 °C V ns µC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. www.vishay.com 2 Document Number: 91208 S-81274-Rev. A, 16-Jun-08 IRFP22N60K, SiHFP22N60K Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 100.00 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V 10 ID, Drain-to-Source Current ( A) ID, Drain-to-Source Current (A) TOP 1 0.1 5.0V 0.01 T J = 150°C 10.00 1.00 T J = 25°C 0.10 VDS = 50V 20µs PULSE WIDTH 20µs PULSE WIDTH Tj = 25°C 0.001 0.01 0.1 1 10 100 5.0 VDS, Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics 100 3.0 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V r , Drain-to-Source On Resistance DS(on) (Normalized) ID, Drain-to-Source Current (A) TOP 10 6.0 7.0 8.0 9.0 10.0 VGS , Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics 5.0V 1 20µs PULSE WIDTH Tj = 150°C 0.1 I D = 22A 2.5 2.0 1.5 1.0 0.5 V GS = 10V 0.0 0.1 1 10 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics Document Number: 91208 S-81274-Rev. A, 16-Jun-08 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (° C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRFP22N60K, SiHFP22N60K Vishay Siliconix 100000 ISD, Reverse Drain Current (A) Crss Coss 10000 C, Capacitance (pF) 100.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED = Cgd = Cds + Cgd Ciss 1000 Coss 100 Crss 10 1.0 T J = 25°C VGS = 0V 0.1 1 10 100 1000 0.2 VDS, Drain-to-Source Voltage (V) 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-toDrain Voltage (V) Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 1000 20 ID= 22A OPERATION IN THIS AREA LIMITED BY RDS(on) VDS= 480V VDS= 300V VDS= 120V 16 ID, Drain-to-Source Current (A) VGS , Gate-to-Source Voltage (V) T J = 150°C 10.0 12 8 4 0 0 40 80 120 160 Q G Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 100 100µsec 10 1msec 1 0.1 Tc = 25°C Tj = 150°C Single Pulse 1 10 10msec 100 1000 10000 VDS , Drain-toSource Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91208 S-81274-Rev. A, 16-Jun-08 IRFP22N60K, SiHFP22N60K Vishay Siliconix RD VDS 25 VGS ID, Drain Current (A) D.U.T. RG 20 + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 15 Fig. 10a - Switching Time Test Circuit 10 VDS 90 % 5 0 25 50 75 100 125 10 % VGS 150 TC, Case Temperature (° C) td(on) td(off) tf tr Fig. 10b - Switching Time Waveforms Fig. 9 - Maximum Drain Current vs. Case Temperature Thermal Response (ZthJC) 1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 P DM t1 t2 Notes: 1. Duty factor D = 2. Peak T 0.001 0.00001 0.0001 0.001 0.01 t1/ t 2 J = P DM x Z thJC +T C 0.1 1 t1, Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS 15 V L VDS D.U.T RG IAS 20 V tp tp Driver + - VDD IAS 0.01Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91208 S-81274-Rev. A, 16-Jun-08 A Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 IRFP22N60K, SiHFP22N60K Vishay Siliconix 800 EAS, Single Pulse Avalanche Energy (mJ) ID TOP 9.8A 14A 22A BOTTOM 600 400 200 0 25 50 75 100 125 150 Starting T J, Junction Temperature Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG 10 V 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91208 S-81274-Rev. A, 16-Jun-08 IRFP22N60K, SiHFP22N60K Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - • • • • RG dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. + Period D= + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current dI/dt D.U.T. VDS Waveform Diode Recovery dV/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91208. Document Number: 91208 S-81274-Rev. A, 16-Jun-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1