IRF IRFP22N60K

PD - 94414A
SMPS MOSFET
IRFP22N60K
HEXFET® Power MOSFET
Applications
VDSS
RDS(on) typ.
l Hard Switching Primary or PFS Switch
600V
240mΩ
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Motor Drive
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage and
Current
l Enhanced Body Diode dv/dt Capability
ID
22A
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Max.
Units
22
14
88
370
2.9
± 30
18
-55 to + 150
A
W
W/°C
V
V/ns
300
°C
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Typ.
Max.
Units
–––
–––
–––
380
22
37
mJ
A
mJ
Typ.
Max.
Units
–––
0.24
–––
0.34
–––
40
°C/W
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
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Parameter
Junction-to-Case†
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient†
1
8/26/04
IRFP22N60K
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
RDS(on)
VGS(th)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
∆V(BR)DSS/∆TJ
Min.
600
–––
–––
3.0
–––
–––
–––
–––
Typ.
–––
0.30
240
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA†
280
mΩ VGS = 10V, ID = 13A „
5.0
V
VDS = VGS, ID = 250µA
50
µA VDS = 600V, VGS = 0V
250
µA
VDS = 480V, VGS = 0V, TJ = 125°C
100
VGS = 30V
nA
-100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
26
99
48
37
3570
350
36
4710
92
180
Max. Units
Conditions
–––
S
VDS = 50V, ID = 13A
150
ID = 22A
45
nC
VDS = 480V
76
VGS = 10V „
–––
VDD = 300V
–––
ID = 22A
ns
–––
RG = 6.2 Ω
–––
VGS = 10V „
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 480V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to 480V …
Diode Characteristics
Symbol
IS
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISM
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
––– ––– 22
MOSFET symbol
showing the
A
G
––– ––– 88
integral reverse
S
p-n junction diode.
––– ––– 1.5
V
TJ = 25°C, IS = 22A, VGS = 0V „
IF = 22A
––– 590 890
TJ = 25°C
ns
––– 670 1010
TJ = 125°C
di/dt = 100A/µs „
––– 7.2
11
TJ = 25°C
µC
––– 8.5
13
TJ = 125°C
––– 26
39
A
TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 1.5mH, RG = 25Ω,
IAS = 22A
ƒ ISD ≤ 22A, di/dt ≤ 540 A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C.
2
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
† Rθ is measured at TJ approximately 90°C
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IRFP22N60K
100
100
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
10
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
1
0.1
5.0V
0.01
10
5.0V
1
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 150°C
0.001
0.1
0.1
1
10
100
0.1
1
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3.0
T J = 150°C
1.00
T J = 25°C
0.10
VDS = 50V
20µs PULSE WIDTH
0.01
7.0
8.0
9.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
10.0
2.0
(Normalized)
10.00
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I D = 22A
2.5
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current (A)
100.00
6.0
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
5.0
10
1.5
1.0
0.5
V GS = 10V
0.0
-60
-40
-20
0
20
40
60
TJ, Junction Temperature
80
100
120
140
( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
160
IRFP22N60K
100000
ID= 22A
VGS , Gate-to-Source Voltage (V)
Crss
Coss
10000
C, Capacitance (pF)
20
VGS = 0V,
f = 1 MHZ
C iss
= C gs + C gd , C ds
SHORTED
= Cgd
= Cds + Cgd
Ciss
1000
Coss
100
VDS= 480V
VDS= 300V
VDS= 120V
16
12
8
4
Crss
0
10
1
10
100
0
1000
40
80
120
160
Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100.0
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
T J = 150°C
10.0
1.0
T J = 25°C
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
1msec
1
0.1
1.4
100µsec
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
10msec
100
1000
10000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFP22N60K
25
VGS
20
ID , Drain Current (A)
RD
V DS
D.U.T.
RG
+
-VDD
VGS
15
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
10
Fig 10a. Switching Time Test Circuit
VDS
5
90%
0
25
50
75
100
TC , Case Temperature
125
150
( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
(Z thJC)
1
D = 0.50
0.1
Thermal Response
0.20
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P DM
t1
t2
Notes:
1. Duty factor D =
2. Peak T
0.001
0.00001
0.0001
0.001
0.01
t1/ t 2
J = P DM x Z thJC
+T C
0.1
1
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFP22N60K
800
ID
TOP
EAS , Single Pulse Avalanche Energy (mJ)
BOTTOM
9.8A
14A
22A
15V
600
DRIVER
L
VDS
400
D.U.T
RG
+
V
- DD
IAS
20V
200
tp
A
0.01Ω
Fig 12c. Unclamped Inductive Test Circuit
0
25
50
75
100
125
150
( °C)
Starting T , JJunction Temperature
Fig 12a. Maximum Avalanche Energy
Vs. Drain Current
V(BR)DSS
tp
I AS
Fig 12d. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
50KΩ
12V
VGS
.2µF
.3µF
D.U.T.
QGS
+
V
- DS
QGD
VG
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 13a. Gate Charge Test Circuit
6
Charge
Fig 13b. Basic Gate Charge Waveform
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IRFP22N60K
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D.U.T
ƒ
+
‚
-
-
„
+

RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
Period
D=
+
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRFP22N60K
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: T HIS IS AN IRFPE30
WIT H ASS EMBLY
LOT CODE 5657
AS S EMBLED ON WW 35, 2000
IN THE ASS EMBLY LINE "H"
Note: "P" in assembly line
position indicates "Lead-Free"
PART NUMBER
INTERNAT IONAL
RECTIFIER
LOGO
IRFPE30
56
ASS EMBLY
LOT CODE
035H
57
DATE CODE
YEAR 0 = 2000
WEEK 35
LINE H
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/04
8
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