SSBD15200G Main Product Characteristics: IF 15A VRRM 200V Tj(max) 150℃ Vf(max) 0.95V TO220AC Schematic Diagram SSBD15200G Features and Benefits: High Junction Temperature High ESD Protection High Forward & Reverse Surge capability Description: Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC convertors; this product special design for high forward and reverse surge capability Absolute Rating: Symbol Value Unit Peak Repetitive Reverse Voltage 200 V RMS Reverse Voltage 140 V IF(AV) Average Forward Current 15 A IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal) 180 A IRRM Peak Repetitive Reverse Surge Current(Tp=2us) 0.5 A TJ Maximum operation Junction Temperature Range -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ Value Unit 2 ℃/W VRRM VR(RMS) Characterizes Thermal Resistance Symbol RθJC Characterizes Maximum Thermal Resistance Junction To Case(per leg) Electrical Characterizes @TA=25℃ unless otherwise specified Symbol VR Characterizes Min Reverse Breakdown Voltage Typ Max Unit 200 V Forward Voltage Drop 0.95 V Leakage Current trr Reverse recovery time ©Silikron Semiconductor CO., LTD. 0.1 10 22 2012.3.23 www.silikron.com IF=15A, TJ=25℃ IF=15A, TJ=125℃ 0.85 IR IR=0.5mA IF=10A, TJ=25℃ 0.9 VF Test Condition mA ns Version: 1.0 VR=200V, TJ=25℃ VR=200V, TJ=125℃ IF=0.5A, di/dt=100A/us page 1of5 SSBD15200G I-V Curves: Figure 1：Typical Forward Characteristics Figure 2：Typical Capacitance Characteristics Figure 3：Typical Reverse Characteristics ©Silikron Semiconductor CO., LTD. 2012.3.23 www.silikron.com Version: 1.0 page 2of5 SSBD15200G Mechanical Data： TO220AC: ©Silikron Semiconductor CO., LTD. 2012.3.23 www.silikron.com Version: 1.0 page 3of5 SSBD15200G Ordering and Marking Information Device Marking: SSBD15200G Package (Available) TO220AC Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Units/ Tubes/Inner Type Tube Box TO220AC 50 20 Reliability Test Program Test Item Conditions High Temperature Reverse Bias(HTRB) Tj=125℃ to 175℃ @ 80% of Max VDSS/VCES/VR ©Silikron Semiconductor CO., LTD. Units/I nner Box Inner Boxes/Carton Box Units/Carto n Box 1000 6 6000 Duration Sample Size 168 hours 500 hours 1000 hours 3 lots x 77 devices 2012.3.23 www.silikron.com Version: 1.0 page 4of5 SSBD15200G ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. 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Specifications and information herein are subject to change without notice. Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Suzhou Silikron Semiconductor Corp. 11A, 468 Xinglong Street, Suzhou Industrial Park, P.R.China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: [email protected] ©Silikron Semiconductor CO., LTD. 2012.3.23 www.silikron.com Version: 1.0 page 5of5