SSF1090
Feathers:
ID =15A
Advanced trench process technology
Special designed for Convertors and power controls
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Avalanche Energy 100% test
BV=100V
Rdson=0.06Ω (Typ.)
Description:
The SSF1090 is a new generation of high voltage and low current
N–Channel enhancement mode trench power MOSFET. This new
technology increases the device reliability and electrical parameter
repeatability. SSF1090 is assembled in high reliability and qualified
assembly house.
Application:
Power switching application
SSF1090 TOP View (TO-220)
Absolute Maximum Ratings
Parameter
Max.
ID@Tc=25 ْC
Continuous drain current,VGS@10V
15
ID@Tc=100ْC
Continuous drain current,VGS@10V
10
IDM
Pulsed drain current
①
Units
A
60
Power dissipation
42
W
Linear derating factor
0.4
W/ C
ْ
VGS
Gate-to-Source voltage
±20
V
EAS
Single pulse avalanche energy ②
240
mJ
EAR
Repetitive avalanche energy
TBD
mJ
dv/dt
Peak diode recovery voltage
28
v/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
–55 to +175
ْC
PD@TC=25ْC
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
3.6
—
RθJA
Junction-to-ambient
—
—
69
Units
C/W
*When mounted on the minimum pas size recommended（PCB Mount）
Electrical Characteristics @TJ=25 ْC (unless otherwise specified)
Parameter
Min.
Typ.
Drain-to-Source breakdown voltage
100
—
—
V
VGS=0V,ID=250μA
RDS(on) Static Drain-to-Source on-resistance
—
0.06
0.09
Ω
VGS=10V,ID=2A
VGS(th)
Gate threshold voltage
2.0
—
4.0
V
VDS=VGS,ID=250μA
IDSS
Drain-to-Source leakage current
—
—
1
—
—
10
IGSS
Gate-to-Source forward leakage
—
—
100
BVDSS
©Silikron Semiconductor Corporation
2009.6.10
Max. Units
μA
nA
Test Conditions
VDS=30V,VGS=0V
VDS=100V, VGS=0V,TJ=150ْC
VGS=20V
Version: 2.1
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SSF1090
Gate-to-Source reverse leakage
—
—
Qg
Total gate charge
—
21.18
Qgs
Gate-to-Source charge
—
4.7
—
Qgd
Gate-to-Drain("Miller") charge
—
8.5
—
td(on)
Turn-on delay time
—
10
tr
Rise time
—
9.5
td(off)
Turn-Off delay time
—
18.3
tf
Fall time
—
4.2
Ciss
Input capacitance
—
697
750
Coss
Output capacitance
—
59
110
Crss
Reverse transfer capacitance
—
43
45
-100
VGS=-20V
ID=9.2A,VGS=10V
nC
VDD=80V,RL=8.6Ω
VDD=50V
ID=9.2A ,RL=5.4Ω
nS
RG=18Ω
VGS=10V
VGS=0V
pF
VDS=25V
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
①
Min.
Typ.
Max.
—
—
3
Units
MOSFET symbol
A
—
—
18
Test Conditions
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
—
1.3
V
TJ=25ْC,IS=3A,VGS=0V ③
trr
Reverse Recovery Time
—
35
—
nS
TJ=25ْC,IF=9.2A
Qrr
Reverse Recovery Charge
—
67.2
—
μC
di/dt=100A/μs ③
ton
Forward Turn-on Time
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature
② Test condition: L =30mH, VDD = 50V, Id=4A
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω
Starting TJ = 25°C
EAS Test Circuit:
BV dss
Gate Charge Test Circuit:
V dd
L
Vgs
RL
RG
VDD
1mA
©Silikron Semiconductor Corporation
2009.6.10
RG
Version: 2.1
page
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SSF1090
Switch Time Test Circuit:
Switch Waveform:
Gate Charge
Source-Drain Diode Forward Voltage
On Resistance vs. Junction Temperature
©Silikron Semiconductor Corporation
Breakdown Voltage vs. Junction Temperature
2009.6.10
Version: 2.1
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SSF1090
Safe Operation Area
Max Drain Current vs. Junction Temperature
Transient Thermal Impedance Curve
©Silikron Semiconductor Corporation
2009.6.10
Version: 2.1
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SSF1090
TO220 MECHANICAL DATA:
©Silikron Semiconductor Corporation
2009.6.10
Version: 2.1
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