SSMD60200PT Main Product Characteristics: IF 2×30A VRRM 200V Tj(max) 175℃ Vf(max) 0.76V TO247 Schematic Diagram SSMD60200PT Features and Benefits: High Junction Temperature High ESD Protection High Forward & Reverse Surge capability Description: Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC convertors; this product special design for high forward and reverse surge capability Absolute Rating: Symbol VRRM VR(RMS) Characterizes Value Unit Peak Repetitive Reverse Voltage 200 V RMS Reverse Voltage 140 V Per diode 30 A Per device 60 A IF(AV) Average Forward Current IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal) 300 A IRRM Peak Repetitive Reverse Surge Current(Tp=2us) 0.5 A TJ Maximum operation Junction Temperature Range -55~175 ℃ Tstg Storage Temperature Range -55~175 ℃ Value Unit 1.2 ℃/W Thermal Resistance Symbol RθJC Characterizes Maximum Thermal Resistance Junction To Case (per leg) Electrical Characterizes @TA=25℃ unless otherwise specified Symbol VR Characterizes Reverse Breakdown Voltage Min Typ Max 200 Unit V 0.85 VF Forward Voltage Drop 0.92 V Leakage Current trr Reverse recovery time 28 35 ns Irrm Peak recovery current 1.2 2 A ©Silikron Semiconductor CO., LTD. 2011.5.26 www.silikron.com IF=30A, TJ=25℃ IF=30A, TJ=125℃ IR 5 IR=0.5mA IF=15A, TJ=25℃ 0.76 0.1 Test Condition mA VR=200V, TJ=25℃ VR=200V, TJ=125℃ IF=30A,di/dt=100A/us,VR=30V Version: 1.0 page 1of5 SSMD60200PT I-V Curves: Figure 1：Typical Forward Characteristics Figure 2：Typical Capacitance Characteristics Figure 3：Typical Reverse Characteristics ©Silikron Semiconductor CO., LTD. 2011.5.26 www.silikron.com Version: 1.0 page 2of5 SSMD60200PT Mechanical Data： TO247: ©Silikron Semiconductor CO., LTD. 2011.5.26 www.silikron.com Version: 1.0 page 3of5 SSMD60200PT Ordering and Marking Information Device Marking: SSMD60200PT Package (Available) TO-247 Operating Temperature Range C : -55 to 175 ºC Devices per Unit Packag Units/ Tubes/Inne Units/Inne e Type Tube r r Box Box 30 20 600 TO247 Reliability Test Program Test Item Conditions High Temperature Reverse Bias(HTRB) Tj=125℃ to 175℃ @ 80% of Max VDSS/VCES/VR ©Silikron Semiconductor CO., LTD. Inner Boxes/Carton Box Units/Carto n Box 10 6000 Duration Sample Size 168 hours 500 hours 1000 hours 3 lots x 77 devices 2011.5.26 www.silikron.com Version: 1.0 page 4of5 SSMD60200PT ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. 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Specifications and information herein are subject to change without notice. Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Suzhou Silikron Semiconductor Corp. 11A, 468 Xinglong Street, Suzhou Industrial Park, P.R.China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: [email protected] ©Silikron Semiconductor CO., LTD. 2011.5.26 www.silikron.com Version: 1.0 page 5of5