SSF4004

SSF4004
Feathers:
ID=200A

Advanced trench process technology

Special designed for Convertors and power controls

High density cell design for ultra low Rdson

Fully characterized Avalanche voltage and current

Avalanche Energy 100% test
BV=40V
Rdson=4 mΩ（max.）
Description:
The SSF4004 is a new generation of high voltage and low
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF4004 is assembled
in high reliability and qualified assembly house.
Application:

Power switching application

Commercial-industrial application
SSF4004 TOP View (TO220)
Absolute Maximum Ratings
Parameter
Max.
ID@Tc=25 ْC
Continuous drain current,VGS@10V
200
ID@Tc=100ْC
Continuous drain current,VGS@10V
140
IDM
Pulsed drain current
Units
A
800
①
Power dissipation
238
W
Linear derating factor
2.0
W/ C
ْ
VGS
Gate-to-Source voltage
±20
V
dv/dt
Peak diode recovery voltage
31
v/ns
EAS
Single pulse avalanche energy ②
520
mJ
EAR
Repetitive avalanche energy
TBD
TJ
Operating Junction and
TSTG
Storage Temperature Range
PD@TC=25ْC
–55 to +175
ْC
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
0.63
—
RθJA
Junction-to-ambient
—
—
62
Units
ْC/W
Electrical Characteristics @TJ=25 ْC (unless otherwise specified)
Parameter
Min.
Typ.
BVDSS
Drain-to-Source breakdown voltage
40
—
—
V
VGS=0V,ID=250μA
RDS(on)
Static Drain-to-Source on-resistance
—
3.5
4
mΩ
VGS=10V,ID=30A
VGS(th)
Gate threshold voltage
2.0
—
4.0
V
VDS=VGS,ID=250μA
IDSS
Drain-to-Source leakage current
—
—
2
—
—
10
Gate-to-Source forward leakage
—
—
100
Gate-to-Source reverse leakage
—
—
-100
IGSS
©Silikron Semiconductor Corporation
2009.7.10
Max. Units
Test Conditions
VDS=40V,VGS=0V
uA
VDS=40V,VGS=0V,TJ=150ْC
nA
Version: 1.1
VGS=20V
VGS=-20V
page
1of5
SSF4004
Qg
Total gate charge
—
90
—
Qgs
Gate-to-Source charge
—
14
—
Qgd
Gate-to-Drain("Miller") charge
—
24
—
VGS=10V
td(on)
Turn-on delay time
—
18.2
—
VDD=30V
tr
Rise time
—
15.6
—
td(off)
Turn-Off delay time
—
70.5
—
tf
Fall time
—
13.8
—
VGS=10V
Ciss
Input capacitance
—
3150
—
VGS=0V
Coss
Output capacitance
—
300
—
Crss
Reverse transfer capacitance
—
240
—
ID=30A
nC
VDD=30V
ID=2A ,RL=15Ω
nS
RG=2.5Ω
pF
VDS=25V
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
Continuous
IS
Source
Current.
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
.
①
Min.
Typ.
Max.
—
—
200
Units
MOSFET symbol
A
—
—
800
Test Conditions
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
—
1.3
V
TJ=25ْC,IS=30A,VGS=0V ③
trr
Reverse Recovery Time
－
57
—
nS
TJ=25ْC,IF=57A
Qrr
Reverse Recovery Charge
－
107
—
μC
di/dt=100A/μs ③
ton
Forward Turn-on Time
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, ID = 57A, VDD = 20V
③ Pulse width≤300μS; duty cycle≤1.5% RG = 25ΩStarting TJ = 25°C
EAS test circuits:
BV dss
Gate charge test circuit:
L
V dd
Vgs
RL
RG
VDD
1mA
©Silikron Semiconductor Corporation
2009.7.10
RG
Version: 1.1
page
2of5
SSF4004
Switch Time Test Circuit：
Switch Waveforms:
Transfer Characteristic
Capacitance
On Resistance vs. Junction Temperature
Breakdown Voltage vs. Junction Temperature
©Silikron Semiconductor Corporation
2009.7.10
Version: 1.1
page
3of5
SSF4004
Gate Charge
Source-Drain Diode Forward Voltage
Safe Operation Area
Max Drain Current vs. Junction Temperature
Transient Thermal Impedance Curve
©Silikron Semiconductor Corporation
2009.7.10
Version: 1.1
page
4of5
SSF4004
TO220 MECHANICAL DATA:
©Silikron Semiconductor Corporation
2009.7.10
Version: 1.1
page
5of5