SSBD6045PT Main Product Characteristics: IF 2×30A VRRM 45V Tj(max) 150℃ Vf(max) 0.55V TO247 Schematic Diagram SSBD6045PT Features and Benefits: High Junction Temperature High ESD Protection High Forward & Reverse Surge capability Description: Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC convertors; this product special design for high forward and reverse surge capability Absolute Rating: Symbol VRRM VR(RMS) Characterizes Value Unit Peak Repetitive Reverse Voltage 45 V RMS Reverse Voltage 31 V Per diode 30 A Per device 60 A IF(AV) Average Forward Current IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal) 300 A IRRM Peak Repetitive Reverse Surge Current(Tp=2us) 0.5 A TJ Maximum operation Junction Temperature Range -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ Value Unit 1.2 ℃/W Thermal Resistance Symbol RθJC Characterizes Maximum Thermal Resistance Junction To Case (per leg) Electrical Characterizes @TA=25℃ unless otherwise specified Symbol VR Characterizes Reverse Breakdown Voltage Min Typ Max 45 Unit V 0.5 VF Forward Voltage Drop 0.55 0.5 Leakage Current ©Silikron Semiconductor CO., LTD. 50 2011.10.18 www.silikron.com IR=0.5mA IF=15A, TJ=25℃ V 0.55 IR Test Condition IF=30A, TJ=25℃ IF=30A, TJ=125℃ mA VR=45V, TJ=25℃ VR=45V, TJ=125℃ Version: 1.0 page 1of5 SSBD6045PT I-V Curves: Figure 1：Typical Forward Characteristics Figure 2：Typical Capacitance Characteristics Figure 3：Typical Reverse Characteristics ©Silikron Semiconductor CO., LTD. 2011.10.18 www.silikron.com Version: 1.0 page 2of5 SSBD6045PT Mechanical Data： TO247: ©Silikron Semiconductor CO., LTD. 2011.10.18 www.silikron.com Version: 1.0 page 3of5 SSBD6045PT Ordering and Marking Information Device Marking: SSBD6045PT Package (Available) TO-247 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Units/ Tubes/Inner Type Tube Box Units/Inner Box Inner Boxes/Carton Box Units/Cart on Box TO247 600 10 6000 30 20 Reliability Test Program Test Item Conditions High Temperature Reverse Bias(HTRB) Tj=125℃ to 150℃ @ 80% of Max VDSS/VCES/VR ©Silikron Semiconductor CO., LTD. Duration Sample Size 168 hours 500 hours 1000 hours 3 lots x 77 devices 2011.10.18 www.silikron.com Version: 1.0 page 4of5 SSBD6045PT ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. 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Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product that you intend to use. This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice. Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Suzhou Silikron Semiconductor Corp. 11A, 468 Xinglong Street, Suzhou Industrial Park, P.R.China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: [email protected] ©Silikron Semiconductor CO., LTD. 2011.10.18 www.silikron.com Version: 1.0 page 5of5