1PS70SB16 Dual Schottky barrier diode 17 December 2012 Product data sheet 1. General description Dual Planar Schottky barrier diode in common anode configuration with an integrated guard ring for stress protection, encapsulated in a very small SOT323 (SC-70) SurfaceMounted Device (SMD) plastic package. 2. Features and benefits • • • Low forward voltage Low capacitance AEC-Q101 qualified 3. Applications • • • • Ultra high-speed switching Line termination Voltage clamping Reverse polarity protection 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode IF forward current - - 200 mA VR reverse voltage - - 30 V - - 400 mV Per diode VF forward voltage IF = 10 mA; Tamb = 25 °C Scan or click this QR code to view the latest information for this product 1PS70SB16 NXP Semiconductors Dual Schottky barrier diode 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K1 cathode (diode 1) 2 K2 cathode (diode 2) 3 A1, A2 common anode Simplified outline Graphic symbol A1, A2 3 K1 1 K2 aaa-004974 2 SC-70 (SOT323) 6. Ordering information Table 3. Ordering information Type number Package 1PS70SB16 Name Description Version SC-70 plastic surface-mounted package; 3 leads SOT323 7. Marking Table 4. Marking codes Type number Marking code [1] 1PS70SB16 7%6 [1] % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode VR reverse voltage - 30 V IF forward current - 200 mA IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 - 300 mA IFSM non-repetitive peak forward current tp < 10 ms; Tj(init) = 25 °C - 600 mA Ptot total power dissipation Tamb < 25 °C - 200 mW Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C 1PS70SB16 Product data sheet All information provided in this document is subject to legal disclaimers. 17 December 2012 © NXP B.V. 2012. All rights reserved 2/9 1PS70SB16 NXP Semiconductors Dual Schottky barrier diode Symbol Parameter Conditions Tstg storage temperature Min Max Unit -65 150 °C Min Typ Max Unit - - 625 K/W 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient in free air Per device Rth(j-a) [1] [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit forward voltage IF = 0.1 mA; Tamb = 25 °C - - 240 mV IF = 1 mA; Tamb = 25 °C - - 320 mV IF = 10 mA; Tamb = 25 °C - - 400 mV IF = 30 mA; Tamb = 25 °C - - 500 mV IF = 100 mA; Tamb = 25 °C - - 800 mV VR = 25 V; pulsed; tp = 300 µs; - - 2 µA - - 10 pF Per diode VF IR reverse current δ = 0.02 ; Tamb = 25 °C Cd diode capacitance 1PS70SB16 Product data sheet VR = 1 V; f = 1 MHz; Tamb = 25 °C All information provided in this document is subject to legal disclaimers. 17 December 2012 © NXP B.V. 2012. All rights reserved 3/9 1PS70SB16 NXP Semiconductors Dual Schottky barrier diode 006aac829 103 IF (mA) (3) (1) aaa-004515 103 IR (µA) (2) 102 (1) 102 (2) 10 10 (1) (2) (3) 1 1 10-1 0.0 Fig. 1. 0.4 0.8 VF (V) 10-1 1.2 (3) 0 10 (1) Tamb = 125 °C (1) Tamb = 125 °C (2) Tamb = 85 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (3) Tamb = 25 °C Forward current as a function of forward voltage; typical values Fig. 2. 20 VR (V) 30 Reverse current as a function of reverse voltage; typical values 006aac891 10 Cd (pF) 8 6 4 2 0 0 10 20 VR (V) 30 Tamb = 25 °C; f = 1 MHz Fig. 3. Diode capacitance as a function of reverse voltage; typical values 11. Test information 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 1PS70SB16 Product data sheet All information provided in this document is subject to legal disclaimers. 17 December 2012 © NXP B.V. 2012. All rights reserved 4/9 1PS70SB16 NXP Semiconductors Dual Schottky barrier diode 12. Package outline 2.2 1.8 1.1 0.8 0.45 0.15 3 2.2 1.35 2.0 1.15 1 2 0.4 0.3 1.3 0.25 0.10 Dimensions in mm Fig. 4. 04-11-04 Package outline SC-70 (SOT323) 13. Soldering 2.65 1.85 1.325 solder lands solder resist 2 2.35 0.6 (3×) 3 1.3 1 0.5 (3×) solder paste occupied area Dimensions in mm 0.55 (3×) Fig. 5. sot323_fr Reflow soldering footprint for SC-70 (SOT323) 1PS70SB16 Product data sheet All information provided in this document is subject to legal disclaimers. 17 December 2012 © NXP B.V. 2012. All rights reserved 5/9 1PS70SB16 NXP Semiconductors Dual Schottky barrier diode 4.6 2.575 1.425 (3×) solder lands solder resist occupied area 1.8 3.65 2.1 Dimensions in mm preferred transport direction during soldering 09 (2×) sot323_fw Fig. 6. Wave soldering footprint for SC-70 (SOT323) 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes 1PS70SB16 v.2 20121217 Product data sheet - 1PS70SB10_14_15_16 v.1 Modifications: • • • • • • • • • • • • The format of this document has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Sections 1 to 3 updated Section 4 "Quick reference data" added Section 6 "Ordering information" added Section 7 "Marking" updated Table 5 "Limiting values": ambient temperature Tamb and junction temperature Tj updated Figues 1, 2 and 3 updated Section 11 "Test information" added Figure 4: superseded by minimized package outline drawing Section 13 "Soldering" added Section 14 "Legal information" updated 1PS70SB10_14_15_16 19990426 v.1 1PS70SB16 Product data sheet Product data sheet - All information provided in this document is subject to legal disclaimers. 17 December 2012 - © NXP B.V. 2012. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................3 10 Characteristics ....................................................... 3 11 11.1 Test information ..................................................... 4 Quality information ......................................... 12 Package outline ..................................................... 5 13 Soldering ................................................................ 5 14 Revision history ..................................................... 6 15 15.1 15.2 15.3 15.4 Legal information ...................................................7 Data sheet status ................................................. 7 Definitions .............................................................7 Disclaimers ...........................................................7 Trademarks .......................................................... 8 © NXP B.V. 2012. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 17 December 2012 1PS70SB16 Product data sheet All information provided in this document is subject to legal disclaimers. 17 December 2012 © NXP B.V. 2012. All rights reserved 9/9