BAT754L Schottky barrier triple diode 22 November 2012 Product data sheet 1. Product profile 1.1 General description Three internal isolated planar Schottky barrier diodes with an integrated guard ring for stress protection,encapsulated in very small SOT363 Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits • Low forward voltage • Low capacitance • AEC-Q101 qualified 1.3 Applications • Ultra high-speed switching • Line termination • Voltage clamping • Reverse polarity protection 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit - - 30 V - - 750 mV - - 2 µA Per diode VR reverse voltage Per diode VF forward voltage IF = 100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C IR reverse current VR = 25 V; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C Scan or click this QR code to view the latest information for this product BAT754L NXP Semiconductors Schottky barrier triple diode 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 A1 anode (diode 1) 2 A2 anode (diode 2) 3 A3 anode (diode 3) 4 K3 cathode (diode 3) 5 K2 cathode (diode 2) 6 K1 cathode (diode 1) Simplified outline Graphic symbol 6 5 4 1 2 3 K1 A1 K2 K3 A2 A3 aaa-005704 TSSOP6 (SOT363) 3. Ordering information Table 3. Ordering information Type number Package BAT754L Name Description Version TSSOP6 plastic surface-mounted package; 6 leads SOT363 4. Marking Table 4. Marking codes Type number Marking code [1] BAT754L L1% [1] % = placeholder for manufacturing site code 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode VR reverse voltage - 30 V IF forward current - 200 mA IFRM repetitive peak forward current tp < 1 s; δ < 0.5 - 300 mA IFSM non-repetitive peak forward current tp < 10 ms; Tj(init) = 25 °C - 600 mA Tj junction temperature - 125 °C Tamb ambient temperature -55 125 °C BAT754L Product data sheet All information provided in this document is subject to legal disclaimers. 22 November 2012 © NXP B.V. 2012. All rights reserved 2/9 BAT754L NXP Semiconductors Schottky barrier triple diode Symbol Parameter Conditions Tstg storage temperature Min Max Unit -65 150 °C Min Typ Max Unit - - 416 K/W 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air [1] [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit forward voltage IF = 0.1 mA; pulsed; tp ≤ 300 µs; - - 200 mV - - 260 mV - - 340 mV - - 420 mV - - 750 mV - - 2 µA - - 10 pF Per diode VF δ ≤ 0.02 ; Tamb = 25 °C IF = 1 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C IF = 10 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C IF = 30 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C IF = 100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C IR reverse current VR = 25 V; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C Cd diode capacitance BAT754L Product data sheet VR = 1 V; f = 1 MHz; Tamb = 25 °C All information provided in this document is subject to legal disclaimers. 22 November 2012 © NXP B.V. 2012. All rights reserved 3/9 BAT754L NXP Semiconductors Schottky barrier triple diode 006aac830 103 IF (mA) (2) (1) IR (µA) (3) 102 10 10 (2) 10-1 0.0 (2) (3) 1 Fig. 1. (1) 102 (1) aaa-004516 103 (3) 1 0.4 0.8 VF (V) 10-1 1.2 0 10 (1) Tamb = 125 °C (1) Tamb = 125 °C (2) Tamb = 85 °C (2) Tamb = 85 °C (3) Tamb = 25 °C (3) Tamb = 25 °C Forward current as a function of forward voltage; typical values Fig. 2. 20 VR (V) 30 Reverse current as a function of reverse voltage; typical values msa891 15 Cd (pF) 10 5 0 0 10 20 VR (V) 30 f = 1 MHz; Tamb = 25 °C Fig. 3. Diode capacitance as a function of reverse voltage; typical values 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BAT754L Product data sheet All information provided in this document is subject to legal disclaimers. 22 November 2012 © NXP B.V. 2012. All rights reserved 4/9 BAT754L NXP Semiconductors Schottky barrier triple diode 9. Package outline 2.2 1.8 6 2.2 1.35 2.0 1.15 1.1 0.8 5 4 2 3 0.45 0.15 pin 1 index 1 0.65 1.3 0.3 0.2 0.25 0.10 Dimensions in mm Fig. 4. 06-03-16 Package outline TSSOP6 (SOT363) 10. Soldering 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) 0.6 (4×) Dimensions in mm 1.8 Fig. 5. occupied area sot363_fr Reflow soldering footprint for TSSOP6 (SOT363) BAT754L Product data sheet All information provided in this document is subject to legal disclaimers. 22 November 2012 © NXP B.V. 2012. All rights reserved 5/9 BAT754L NXP Semiconductors Schottky barrier triple diode 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 preferred transport direction during soldering 1.3 2.45 5.3 Fig. 6. sot363_fw Wave soldering footprint for TSSOP6 (SOT363) 11. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes BAT754L v.2 20121122 Product data sheet - BAT754L v.1 Modifications: • • • • • • • • • • BAT754L v.1 BAT754L Product data sheet The format of this document has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Section 1 Product profile: updated Section 4 Marking: updated Table 5 Limiting values: changed Tamb minimum value to -55 °C according to AEC-Q101 Figure 1 and 2: updated Section 8 Test information: added Figure 4: superseded by minimized package outline drawing Section 10 Soldering: added Section 11 Legal information: updated 20010118 Product specification - All information provided in this document is subject to legal disclaimers. 22 November 2012 - © NXP B.V. 2012. All rights reserved 6/9 BAT754L NXP Semiconductors Schottky barrier triple diode In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. Legal information 12.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. 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NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. BAT754L Product data sheet Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 22 November 2012 © NXP B.V. 2012. All rights reserved 7/9 BAT754L NXP Semiconductors Schottky barrier triple diode No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TOPTriac, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. BAT754L Product data sheet All information provided in this document is subject to legal disclaimers. 22 November 2012 © NXP B.V. 2012. All rights reserved 8/9 BAT754L NXP Semiconductors Schottky barrier triple diode 13. Contents 1 1.1 1.2 1.3 1.4 Product profile ....................................................... 1 General description .............................................. 1 Features and benefits ...........................................1 Applications .......................................................... 1 Quick reference data ............................................ 1 2 Pinning information ............................................... 2 3 Ordering information ............................................. 2 4 Marking ................................................................... 2 5 Limiting values .......................................................2 6 Thermal characteristics .........................................3 7 Characteristics ....................................................... 3 8 8.1 Test information ..................................................... 4 Quality information ......................................... 9 Package outline ..................................................... 5 10 Soldering ................................................................ 5 11 Revision history ..................................................... 6 12 12.1 12.2 12.3 12.4 Legal information ...................................................7 Data sheet status ................................................. 7 Definitions .............................................................7 Disclaimers ...........................................................7 Trademarks .......................................................... 8 © NXP B.V. 2012. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 22 November 2012 BAT754L Product data sheet All information provided in this document is subject to legal disclaimers. 22 November 2012 © NXP B.V. 2012. All rights reserved 9/9