Schottky Barrier Diodes (SBD) MA3X716 Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Symbol Peak forward current Single Forward current (DC) Single 1.45 0.95 3 + 0.1 0.16 − 0.06 0.8 + 0.2 1.1 − 0.1 Rating VR 30 V 150 mA Series 1 : Anode 1 2 : Cathode 2 3 : Cathode 1 JEDEC : TO-236 Anode 2 EIAJ : SC-59 Mini Type Package (3-pin) Unit IFM 110 IF 30 Series 0 to 0.1 0.1 to 0.3 0.4 ± 0.2 ■ Absolute Maximum Ratings Ta = 25°C Reverse voltage (DC) 1 2 verse recovery time (trr) Parameter 0.65 ± 0.15 + 0.1 • Two MA3X704As are contained in one package (series connection) • Optimum for low-voltage rectification because of its low forward rise voltage (VF) • Optimum for high-frequency rectification because of its short re- 1.5 0.95 + 0.2 ■ Features 1.9 ± 0.2 2.9 − 0.05 0.65 ± 0.15 + 0.25 − 0.05 0.4 − 0.05 For switching circuits For wave detection circuit Marking Symbol: M1U mA Internal Connection 20 Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 1 3 2 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 30 V 1 µA Forward voltage (DC) VF1 IF = 1 mA 0.4 V VF2 IF = 30 mA Terminal capacitance Ct VR = 1 V, f = 1 MHz 1.5 1.0 pF V Reverse recovery time* trr IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω 1.0 ns Detection efficiency η Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 65 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω 1 MA3X716 Schottky Barrier Diodes (SBD) IF V F − 20°C 10 1 10−1 10−2 1.0 103 0.8 102 IF = 30 mA 0.6 0.4 3 mA 1 mA 0.2 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) 0 40 80 120 160 Ct VR IR T a 103 102 Reverse current IR (µA) Terminal capacitance Ct (pF) f = 1 MHz Ta = 25°C 2.0 1.6 1.2 0.8 0 0 5 10 15 20 25 Reverse voltage VR (V) 2 VR = 30 V 15 V 10 1 10−1 0.4 30 10−2 −40 0 40 80 120 160 Ambient temperature Ta (°C) 75°C 1 25°C 10−1 0 5 10 15 20 25 Reverse voltage VR (V) Ambient temperature Ta (°C) 2.4 Ta = 125°C 10 10−2 0 −40 1.2 Reverse current IR (µA) Forward current IF (mA) Ta = 125°C Forward voltage VF (V) 75°C 25°C 102 IR VR VF Ta 103 200 30