Schottky Barrier Diodes (SBD) MA4S713 Silicon epitaxial planar type For switching circuits For wave detection circuit Unit : mm 2.1 ± 0.1 1.25 ± 0.1 ■ Features 1 4 2 3 0.7 ± 0.1 0.3 ± 0.05 2.0 ± 0.1 1.3 ± 0.1 • Small S-mini type 4-pin package • Two isolated elements contained in one package, allowing highdensity mounting • Flat lead type package, resulting in promotion of the actual mounting ratio and solderability with a high-speed mounter • Optimum for low-voltage rectification because of its low forward rise voltage (VF) • Optimum for high-frequency rectification because of its short reverse recovery time (trr) ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Reverse voltage (DC) VR 30 V Peak forward current VRM 30 V IFM 150 mA Peak forward current Single Forward current (DC) Single Double* 1 : Anode 1 2 : Anode 2 3 : Cathode 2 4 : Cathode 1 S-Mini Type Package (4-pin) Marking Symbol: M1N 110 Internal Connection IF 30 Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Double* mA 20 1 4 2 3 Note) * : Value per chip ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 30 V 1 µA Forward voltage (DC) VF1 IF = 1 mA 0.4 V VF2 IF = 30 mA Terminal capacitance Ct VR = 1 V, f = 1 MHz Reverse recovery time* trr Detection efficiency η 1 V 1.5 pF IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω 1 ns Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 65 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU Input Pulse Output Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω 1 MA4S713 Schottky Barrier Diodes (SBD) IF V F 1.4 75°C 25°C 10 1 10−1 Reverse current IR (µA) 102 − 20°C Ta = 125°C Forward voltage VF (V) Forward current IF (mA) 103 1.6 102 1.2 1.0 0.8 IF = 30 mA 0.6 0.4 0 0.2 0.4 0.6 0.8 1.0 10 75°C 1 25°C 1 mA 0 −40 1.2 Ta = 125°C 10−1 3 mA 0.2 10−2 IR VR VF Ta 103 Forward voltage VF (V) 10−2 0 40 80 120 160 200 0 IR T a 5 15 20 25 30 IF(surge) tW Ct VR 1 000 3.0 1 000 10 Reverse voltage VR (V) Ambient temperature Ta (°C) VR = 30 V 10 V 1V 10 1 0.1 0.01 −40 40 80 120 Ambient temperature Ta 2 2.5 2.0 1.5 1.0 0.5 0 0 160 (°C) 200 Forward surge current IF(surge) (A) Reverse current IR (µA) 100 Terminal capacitance Ct (pF) Ta = 25°C 0 5 10 15 20 25 Reverse voltage VR (V) 30 300 IF(surge) tW 100 30 10 3 1 0.3 0.1 0.03 0.1 0.3 1 3 10 Pulse width tW (ms) 30 60