Schottky Barrier Diodes (SBD) MA3J741 Silicon epitaxial planar type Unit : mm For switching circuits 2.1 ± 0.1 1.25 ± 0.1 • S-mini type package (3-pin) of MA3X704A • Low forward rise voltage (VF) and satisfactory wave detection efficiency (η) • Small temperature coefficient of forward characteristic • Extremely low reverse current IR 0.3 − 0 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 ■ Features 1 3 0.9 ± 0.1 + 0.1 0.15 − 0.05 2 ■ Absolute Maximum Ratings Ta = 25°C Parameter 0.425 + 0.1 0.425 Symbol Rating Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30 V Forward current (DC) IF 30 mA Peak forward current IFM 150 mA Junction temperature Tj 125 °C Marking Symbol: M1L Storage temperature Tstg −55 to +125 °C Internal Connection 1 : Anode 2 : NC 3 : Cathode EIAJ : SC-70 Flat S-Mini Type Package (3-pin) 1 3 2 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 30 V 300 nA Forward voltage (DC) VF1 IF = 1 mA 0.4 V VF2 IF = 30 mA Terminal capacitance Ct VR = 1 V, f = 1 MHz 1 Reverse recovery time* trr Detection efficiency η V 1.5 pF IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω 1 ns Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 65 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω 1 MA3J741 Schottky Barrier Diodes (SBD) IF V F IR VR VF Ta 103 103 1.0 0.9 75°C 25°C 102 0.8 − 20°C 10 1 10−1 0.7 IF = 30 mA 0.6 10 mA 0.5 0.4 0.3 1 mA 0.2 Reverse current IR (µA) Ta = 125°C Forward voltage VF (V) Forward current IF (mA) 102 Ta = 125°C 10 75°C 1 25°C 10−1 0.1 10−2 0 0.2 0.4 0.6 0.8 1.0 10−2 0 −40 1.2 Forward voltage VF (V) 0 40 80 Ct VR IR T a VR = 30 V 15 V Reverse current IR (µA) Terminal capacitance Ct (pF) 2 1 0 5 10 15 20 25 Reverse voltage VR (V) 30 10 1 10−1 10−2 −40 0 40 80 120 160 Ambient temperature Ta (°C) 0 5 10 15 20 25 Reverse voltage VR (V) 102 f = 1 MHz Ta = 25°C 2 160 Ambient temperature Ta (°C) 3 0 120 200 30