Schottky Barrier Diodes (SBD) MA3X791 Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Single Average forward current Single Unit VR 30 V VRRM 30 V IFM 300 mA Series*2 1.45 0.95 + 0.1 + 0.1 0.16 − 0.06 0.8 + 0.2 1.1 − 0.1 0.1 to 0.3 0.4 ± 0.2 1 : Anode 1 2 : Cathode 2 JEDEC : TO-236 3 : Cathode 1 EIAJ : SC-59 Anode 2 Mini Type Package (3-pin) 200 IF(AV) 100 Series*2 Non-repetitive peak forward surge current*1 3 0 to 0.1 Rating 1 2 ■ Absolute Maximum Ratings Ta = 25°C Symbol 1.9 ± 0.2 + 0.2 • Two MA3X786s are contained in one package (series connection) • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • Low VF (forward rise voltage), with high rectification efficiency 0.65 ± 0.15 1.5 − 0.05 0.95 2.9 − 0.05 ■ Features Parameter + 0.25 0.65 ± 0.15 0.4 − 0.05 For super-high speed switching circuit For small current rectification Marking Symbol: M4A mA 70 Internal Connection IFSM 1 A Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 1 3 2 Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) *2 : Value per chip ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit 15 µA 0.55 V Reverse current (DC) IR VR = 30 V Forward voltage (DC) VF IF = 100 mA Terminal capacitance Ct VR = 0 V, f = 1 MHz 20 pF Reverse recovery time* trr IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 2 ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 250 MHz 3. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω 1 MA3X791 Schottky Barrier Diodes (SBD) IF V F VF Ta 1 IR VR 10−2 0.8 0.7 75°C 25°C − 20°C 10−3 10−4 0.6 0.5 IF = 100 mA 0.4 0.3 0.2 0 0.1 0.2 0.3 0.4 0.5 Forward voltage VF (V) 25°C 10−7 0 IR T a 40 80 120 160 200 0 5 10 15 20 25 30 Reverse voltage VR (V) IF(surge) tW Ct VR 1 000 30 Terminal capacitance Ct (pF) VR = 30 V 3V 1V 100 10 1 25 20 15 10 5 0 0 40 80 120 160 Ambient temperature Ta (°C) 200 Forward surge current IF(surge) (A) Ta = 25°C 1 000 Reverse current IR (µA) 10−5 Ambient temperature Ta (°C) 10 000 0.1 −40 75°C 3 mA 0 −40 0.6 10−4 10−6 10 mA 0.1 2 Reverse current IR (A) Forward voltage VF (V) Forward current IF (A) Ta = 125°C 10−2 10−5 Ta = 125°C 10−3 10−1 0 5 10 15 20 25 Reverse voltage VR (V) 30 300 IF(surge) tW 100 30 10 3 1 0.3 0.1 0.03 0.1 0.3 1 3 10 Pulse width tW (ms) 30