Reliability Report

AOS Semiconductor
Product Reliability Report
AON6996,
rev B
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
www.aosmd.com
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This AOS product reliability report summarizes the qualification result for AON6996. Accelerated
environmental tests are performed on a specific sample size, and then followed by electrical test
at end point. Review of final electrical test result confirms that AON6996 passes AOS quality and
reliability requirements. The released product will be categorized by the process family and be
routine monitored for continuously improving the product quality.
I. Reliability Stress Test Summary and Results
Test Item
HTGB
HTRB
Precondition
(Note A)
HAST
H3TRB
Autoclave
Total
Sample
Size
Number
of
Failures
Reference
Standard
924 pcs
0
JESD22-A108
924 pcs
0
JESD22-A108
-
5313 pcs
0
JESD22-A113
96 hours
924 pcs
0
JESD22-A110
1000 hours
693 pcs
0
JESD22-A101
96 hours
924 pcs
0
JESD22-A102
Test Condition
Time Point
Temp = 150°C ,
Vgs=100% of Vgsmax
Temp = 150°C ,
Vds=80% of Vdsmax
168hr 85°C / 85%RH +
3 cycle reflow@260°C
(MSL 1)
130°C , 85%RH,
33.3 psia,
Vds = 80% of Vdsmax
85°C , 85%RH,
Vds = 80% of Vdsmax
121°C , 29.7psia,
RH=100%
-65°C to 150°C ,
air to air,
Temp = 150°C
168 / 500 /
1000 hours
168 / 500 /
1000 hours
Temperature
1000 cycles
924 pcs
0
JESD22-A104
Cycle
1000 hours
924 pcs
0
JESD22-A103
HTSL
15000 cycles
924 pcs
0
AEC Q101
Tj = 100°C
Power Cycling
Note: The reliability data presents total of available generic data up to the published date.
Note A: MSL (Moisture Sensitivity Level) 1 based on J-STD-020
II. Reliability Evaluation
FIT rate (per billion): 2.18
MTTF = 52359 years
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one
failure per billion hours.
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Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 2.18
9
MTTF = 10 / FIT = 52359 years
Chi²= Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from burn-in tests
H = Duration of burn-in testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
Af
259
87
32
13
5.64
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u =The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 X 10-5eV / K
130 deg C
150 deg C
2.59
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