AOTF290L 100V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Applications ID (at VGS=10V) 100V 72A RDS(ON) (at VGS=10V) < 4.2mΩ 100% UIS Tested 100% Rg Tested • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications TO220F Top View Bottom View G D D G S S D G S Orderable Part Number Package Type Form Minimum Order Quantity AOTF290L TO-220F Tube 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VDS Parameter Drain-Source Voltage Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH VDS Spike C 10µs TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: June 2015 34 72 A EAS 259 mJ VSPIKE 120 V 48 Steady-State Steady-State W 24 8.3 W 5.3 TJ, TSTG Symbol t ≤ 10s A IAS PDSM TA=70°C A 27 PD TC=100°C V 290 IDSM TA=70°C ±20 58 IDM TA=25°C Continuous Drain Current Units V 72 ID TC=100°C Maximum 100 RθJA RθJC www.aosmd.com -55 to 175 Typ 10 45 2.6 °C Max 15 55 3.1 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA Static Drain-Source On-Resistance TJ=55°C 2.9 VGS=10V, ID=20A TJ=125°C ±100 nA 3.5 4.1 V 3.4 4.2 4.9 6.1 Forward Transconductance VDS=5V, ID=20A 50 Diode Forward Voltage IS=1A, VGS=0V 0.67 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd mΩ S 1 V 72 A 7180 VGS=0V, VDS=50V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs µA 5 gFS Output Capacitance Units 1 VSD Coss Max V VDS=100V, VGS=0V IDSS RDS(ON) Typ VGS=10V, VDS=50V, ID=20A 0.8 pF 2780 pF 42 pF 1.7 2.6 Ω 90 126 nC 33 nC Gate Drain Charge 21 nC tD(on) Turn-On DelayTime 31 ns tr Turn-On Rise Time 24 ns tD(off) Turn-Off DelayTime 45 ns tf trr Turn-Off Fall Time 27 ns IF=20A, di/dt=500A/µs 65 Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs 460 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: September 2013 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 8V VDS=5V 6V 80 80 10V 60 ID (A) ID (A) 60 5.5V 40 125°C 40 20 20 25°C VGS=5V 0 0 0 1 2 3 4 2 5 4 5 6 7 8 VGS (Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 1.8 Normalized On-Resistance 5 RDS(ON) (mΩ) 3 4 VGS=10V 3 1.6 VGS=10V ID=20A 1.4 1.2 1 0.8 2 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 8 1.0E+02 ID=20A 1.0E+00 125°C 6 IS (A) RDS(ON) (mΩ) 1.0E+01 125°C 1.0E-01 25°C 1.0E-02 4 1.0E-03 25°C 1.0E-04 2 1.0E-05 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: September 2013 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 10000 VDS=50V ID=20A Ciss 8000 Capacitance (pF) VGS (Volts) 8 6 4 6000 4000 2 Coss 2000 Crss 0 0 0 20 40 60 80 100 0 Qg (nC) Figure 7: Gate-Charge Characteristics RDS(ON) limited 80 100 1ms 10.0 10ms 1.0 TJ(Max)=175°C TC=25°C 0.0 0.01 0.1 TJ(Max)=175°C TC=25°C 400 Power (W) ID (Amps) 60 500 10µs 10µs 100µs 300 200 DC 100 0.1 1 10 VDS (Volts) 100 1000 0 0.0001 0.001 VGS> or equal to 10V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) 10 ZθJC Normalized Transient Thermal Resistance 40 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 100.0 20 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3.1°C/W 1 PDM 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: September 2013 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 100 Power Dissipation (W) 50 80 Current rating ID (A) 40 30 20 10 60 40 20 0 0 0 25 50 75 100 125 150 175 0 25 TCASE (°C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 175 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=55°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM 0.01 Single Pulse 0.001 0.0001 0.001 0.01 0.1 Ton 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: June 2015 www.aosmd.com Page 5 of 6 Figure A: Charge Gate Charge Circuit & Waveforms Gate Test Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr t d(off) t on tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: June 2015 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6