Datasheet

AOTF290L
100V N-Channel MOSFET
General Description
Product Summary
VDS
• Trench Power MV MOSFET technology
• Low RDS(ON)
• Low Gate Charge
• Optimized for fast-switching applications
Applications
ID (at VGS=10V)
100V
72A
RDS(ON) (at VGS=10V)
< 4.2mΩ
100% UIS Tested
100% Rg Tested
• Synchronous Rectification in DC/DC and AC/DC Converters
• Industrial and Motor Drive applications
TO220F
Top View
Bottom View
G
D
D
G
S
S
D
G
S
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOTF290L
TO-220F
Tube
1000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
VDS
Parameter
Drain-Source Voltage
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
C
Avalanche Current C
Avalanche energy
L=0.1mH
VDS Spike
C
10µs
TC=25°C
Power Dissipation B
TA=25°C
Power Dissipation
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0: June 2015
34
72
A
EAS
259
mJ
VSPIKE
120
V
48
Steady-State
Steady-State
W
24
8.3
W
5.3
TJ, TSTG
Symbol
t ≤ 10s
A
IAS
PDSM
TA=70°C
A
27
PD
TC=100°C
V
290
IDSM
TA=70°C
±20
58
IDM
TA=25°C
Continuous Drain
Current
Units
V
72
ID
TC=100°C
Maximum
100
RθJA
RθJC
www.aosmd.com
-55 to 175
Typ
10
45
2.6
°C
Max
15
55
3.1
Units
°C/W
°C/W
°C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
100
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
Static Drain-Source On-Resistance
TJ=55°C
2.9
VGS=10V, ID=20A
TJ=125°C
±100
nA
3.5
4.1
V
3.4
4.2
4.9
6.1
Forward Transconductance
VDS=5V, ID=20A
50
Diode Forward Voltage
IS=1A, VGS=0V
0.67
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Gate Source Charge
Qgd
mΩ
S
1
V
72
A
7180
VGS=0V, VDS=50V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Qgs
µA
5
gFS
Output Capacitance
Units
1
VSD
Coss
Max
V
VDS=100V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=10V, VDS=50V, ID=20A
0.8
pF
2780
pF
42
pF
1.7
2.6
Ω
90
126
nC
33
nC
Gate Drain Charge
21
nC
tD(on)
Turn-On DelayTime
31
ns
tr
Turn-On Rise Time
24
ns
tD(off)
Turn-Off DelayTime
45
ns
tf
trr
Turn-Off Fall Time
27
ns
IF=20A, di/dt=500A/µs
65
Qrr
Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs
460
ns
nC
Body Diode Reverse Recovery Time
VGS=10V, VDS=50V, RL=2.5Ω,
RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: September 2013
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
8V
VDS=5V
6V
80
80
10V
60
ID (A)
ID (A)
60
5.5V
40
125°C
40
20
20
25°C
VGS=5V
0
0
0
1
2
3
4
2
5
4
5
6
7
8
VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
1.8
Normalized On-Resistance
5
RDS(ON) (mΩ)
3
4
VGS=10V
3
1.6
VGS=10V
ID=20A
1.4
1.2
1
0.8
2
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature (Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
8
1.0E+02
ID=20A
1.0E+00
125°C
6
IS (A)
RDS(ON) (mΩ)
1.0E+01
125°C
1.0E-01
25°C
1.0E-02
4
1.0E-03
25°C
1.0E-04
2
1.0E-05
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: September 2013
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note E)
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
10000
VDS=50V
ID=20A
Ciss
8000
Capacitance (pF)
VGS (Volts)
8
6
4
6000
4000
2
Coss
2000
Crss
0
0
0
20
40
60
80
100
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
RDS(ON)
limited
80
100
1ms
10.0
10ms
1.0
TJ(Max)=175°C
TC=25°C
0.0
0.01
0.1
TJ(Max)=175°C
TC=25°C
400
Power (W)
ID (Amps)
60
500
10µs
10µs
100µs
300
200
DC
100
0.1
1
10
VDS (Volts)
100
1000
0
0.0001 0.001
VGS> or equal to 10V
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
10
ZθJC Normalized Transient
Thermal Resistance
40
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
100.0
20
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3.1°C/W
1
PDM
0.1
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: September 2013
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Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
100
Power Dissipation (W)
50
80
Current rating ID (A)
40
30
20
10
60
40
20
0
0
0
25
50
75
100
125
150
175
0
25
TCASE (°C)
Figure 12: Power De-rating (Note F)
50
75
100
125
150
175
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PDM
0.01
Single Pulse
0.001
0.0001
0.001
0.01
0.1
Ton
1
10
T
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: June 2015
www.aosmd.com
Page 5 of 6
Figure
A: Charge
Gate Charge
Circuit
& Waveforms
Gate
Test Test
Circuit
& Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Figure B:Resistive
ResistiveSwitching
Switching Test
Test Circuit
Circuit&&Waveforms
Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
t d(off)
t on
tf
toff
Figure C:
UnclampedInductive
InductiveSwitching
Switching (UIS)
(UIS) Test
Unclamped
TestCircuit
Circuit&&Waveforms
Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Figure
D: Recovery
Diode Recovery
Test Circuit
& Waveforms
Diode
Test Circuit
& Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: June 2015
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6