AO4264E 60V N-Channel AlphaSGT TM General Description Product Summary VDS • Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • ESD protected Applications ID (at VGS=10V) 60V 13.5A RDS(ON) (at VGS=10V) < 9.8mΩ RDS(ON) (at VGS=4.5V) < 13.5mΩ Typical ESD protection HBM Class 2 100% UIS Tested 100% Rg Tested • High efficiency power supply • Secondary synchronus rectifier SOIC-8 Top View D D D Bottom View D D G G PIN1 S S S S PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AO4264E SO-8 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Avalanche energy VDS Spike G Power Dissipation B L=0.3mH C 10µs TA=25°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev.1.0: May 2016 17 A EAS 43 mJ 72 V 3.1 Steady-State Steady-State W 2.0 TJ, TSTG Symbol t ≤ 10s A IAS PD Junction and Storage Temperature Range V 54 VSPIKE TA=70°C ±20 10.5 IDM Avalanche Current C Units V 13.5 ID TA=70°C Maximum 60 RθJA RθJL -55 to 150 Typ 31 59 16 www.aosmd.com °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 5 AO4264E Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA VGS=10V, ID=13.5A Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=13.5A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C VGS=4.5V, ID=11.5A Crss Reverse Transfer Capacitance Rg Gate resistance f=1MHz µA 2.4 V 8 9.8 12.5 15.0 10.5 13.5 0.72 VGS=0V, VDS=30V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg(10V) ±10 1.8 48 DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance µA 5 1.4 0.6 Units V 1 TJ=55°C RDS(ON) Max 60 VDS=60V, VGS=0V IDSS Coss Typ mΩ mΩ S 1 V 4 A 1100 pF 300 pF 28 pF 1.2 2.0 Ω 14.5 25 nC 7 13 nC Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 2.5 nC Qgd Gate Drain Charge 3.5 nC tD(on) Turn-On DelayTime 6.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=13.5A, di/dt=500A/µs Body Diode Reverse Recovery Time VGS=10V, VDS=30V, ID=13.5A VGS=10V, VDS=30V, RL=2.2Ω, RGEN=3Ω 3.5 ns 22 ns 3 ns IF=13.5A, di/dt=500A/µs 18.5 ns nC 59 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125°C. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.10.: May 2016 www.aosmd.com Page 2 of 5 AO4264E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 10V 4.5V VDS=5V 3.5V 50 50 6V 40 ID (A) ID (A) 40 30 3V 20 30 125°C 20 VGS=2.5V 10 25°C 10 0 0 0 1 2 3 4 1 5 3 4 5 VGS (Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 14 Normalized On-Resistance 1.8 12 RDS(ON) (mΩ) 2 VGS=4.5V 10 8 VGS=10V 6 1.6 VGS=10V ID=13.5A 1.4 1.2 VGS=4.5V ID=11.5A 1 0.8 4 0 3 6 9 12 0 15 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 35 1.0E+01 ID=13.5A 30 1.0E+00 125°C 1.0E-01 20 IS (A) RDS(ON) (mΩ) 25 125°C 1.0E-02 15 25°C 1.0E-03 10 5 1.0E-04 25°C 0 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.10.: May 2016 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 1.0 Page 3 of 5 AO4264E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1500 VDS=30V ID=13.5A Ciss 1200 Capacitance (pF) VGS (Volts) 8 6 4 2 900 600 Coss 300 0 Crss 0 0 3 6 9 12 15 0 Qg (nC) Figure 7: Gate-Charge Characteristics 50 60 TJ(Max)=150°C TA=25°C 100µs 1ms 10ms TJ(Max)=150°C TA=25°C Power (W) ID (Amps) 40 10µs 1.0 0.1 30 1000 10µs 10.0 20 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 RDS(ON) limited 10 100 10 DC 0.0 0.01 0.1 1 VDS (Volts) 10 100 1 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PDM 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.10.: May 2016 www.aosmd.com Page 4 of 5 AO4264E Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.10.: May 2016 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5