Datasheet

AON7230
100V N-Channel MOSFET
General Description
Product Summary
• Trench Power MV MOSFET technology
• Low RDS(ON)
• Low Gate Charge
• Logic level driven
VDS
Applications
ID (at VGS=10V)
100V
47A
RDS(ON) (at VGS=10V)
< 11.5mΩ
RDS(ON) (at VGS=4.5V)
< 15.5mΩ
100% UIS Tested
100% Rg Tested
• Synchronous Rectification in DC/DC and AC/DC Converters
• Synchronous Rectification in cell phone Quick Charger
DFN 3.3x3.3
Top View
D
Bottom View
Top View
Pin 1
1
8
2
7
3
6
4
5
G
S
Pin 1
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AON7230
DFN 3.3x3.3
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current C
Avalanche Current
C
Avalanche energy
VDS Spike
Power Dissipation B
L=0.1mH
C
10µs
TC=25°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0: October 2015
IAS
33
A
EAS
54
mJ
VSPIKE
120
V
54
Steady-State
Steady-State
W
21
4.1
RθJA
RθJC
W
2.6
TJ, TSTG
Symbol
t ≤ 10s
A
10
PDSM
TA=70°C
A
13
PD
TC=100°C
V
125
IDSM
TA=70°C
±20
30
IDM
TA=25°C
Continuous Drain
Current
Units
V
47
ID
TC=100°C
Maximum
100
-55 to 150
Typ
25
50
1.8
www.aosmd.com
Max
30
60
2.3
°C
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON7230
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
100
Typ
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
1
TJ=55°C
1.5
±100
nA
1.95
2.5
V
9.5
11.5
18
22
15.5
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=11A
12
gFS
Forward Transconductance
VDS=5V, ID=13A
55
VSD
Diode Forward Voltage
IS=1A, VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=50V, f=1MHz
f=1MHz
µA
5
VGS=10V, ID=13A
Coss
Units
V
VDS=100V, VGS=0V
IDSS
Max
mΩ
S
1
V
47
A
2320
pF
175
pF
11
pF
1.4
2.1
Ω
SWITCHING PARAMETERS
Total Gate Charge
Qg(10V)
30
45
nC
Qg(4.5V)
Total Gate Charge
13
21
Qgs
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=50V, ID=13A
0.7
mΩ
nC
7
nC
Gate Drain Charge
3
nC
Turn-On DelayTime
8
ns
4
ns
27
ns
VGS=10V, VDS=50V, RL=3.85Ω,
RGEN=3Ω
5
ns
IF=13A, di/dt=500A/µs
25
Body Diode Reverse Recovery Charge IF=13A, di/dt=500A/µs
120
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: October 2015
www.aosmd.com
Page 2 of 6
AON7230
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
10V
VDS=5V
4.5V
60
60
3.5V
40
ID (A)
ID (A)
80
4V
40
125°C
20
20
25°C
VGS=3V
0
0
0
1
2
3
4
1
5
3
4
5
VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
16
2.4
2.2
Normalized On-Resistance
14
VGS=4.5V
RDS(ON) (mΩ)
2
12
10
8
VGS=10V
6
2
VGS=10V
ID=13A
1.8
1.6
1.4
1.2
VGS=4.5V
ID=11A
1
0.8
4
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
30
1.0E+01
ID=13A
25
1.0E+00
20
1.0E-01
IS (A)
RDS(ON) (mΩ)
125°C
15
10
125°C
1.0E-02
25°C
1.0E-03
25°C
5
1.0E-04
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: October 2015
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note E)
Page 3 of 6
AON7230
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3000
VDS=50V
ID=13A
Capacitance (pF)
VGS (Volts)
Ciss
2500
8
6
4
2
2000
1500
1000
500
Coss
Crss
0
0
0
5
10
15
20
25
30
35
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
10µs
100
100µs
1ms
10ms
1.0
300
200
DC
TJ(Max)=150°C
TC=25°C
0.0
0.01
TJ(Max)=150°C
TC=25°C
400
Power (W)
ID (Amps)
80
10µs
RDS(ON)
limited
0.1
ZθJC Normalized Transient
Thermal Resistance
60
500
100.0
10
40
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
10.0
20
100
0.1
1
10
100
1000
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=2.3°C/W
1
0.1
PDM
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: October 2015
www.aosmd.com
Page 4 of 6
AON7230
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
50
50
Current rating ID (A)
40
30
20
10
40
30
20
10
0
0
0
25
50
75
100
125
150
0
TCASE (°C)
Figure 12: Power De-rating (Note F)
25
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.1
PDM
0.01
Single Pulse
Ton
0.001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: October 2015
www.aosmd.com
Page 5 of 6
AON7230
Figure
A: Charge
Gate Charge
Test Circuit
& Waveforms
Gate
Test Circuit
& Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Figure B:Resistive
ResistiveSwitching
Switching Test
Test Circuit
Circuit&&Waveforms
Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Figure C:
UnclampedInductive
InductiveSwitching
Switching (UIS) Test
Unclamped
TestCircuit
Circuit&&Waveforms
Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Figure
D: Recovery
Diode Recovery
Test Circuit
& Waveforms
Diode
Test Circuit
& Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: October 2015
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
www.aosmd.com
Page 6 of 6