Datasheet

AON7232
100V N-Channel MOSFET
General Description
Product Summary
• Trench Power MV MOSFET Technology
• Low RDS(ON)
• Low Gate Charge
• Logic Level Driven
ID (at VGS=10V)
VDS
Applications
100V
37A
RDS(ON) (at VGS=10V)
< 13.5mΩ
RDS(ON) (at VGS=4.5V)
< 16.5mΩ
100% UIS Tested
100% Rg Tested
• Synchronous Rectification in AC-DC/DC-DC Converter
• Synchronous Rectification in Cell Phone Quick Charger
DFN 3.3x3.3
Top View
D
Bottom View
Top View
Pin 1
1
8
2
7
3
6
4
5
G
S
Pin 1
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AON7232
DFN 3.3x3.3
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
VDS
Parameter
Drain-Source Voltage
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
Avalanche energy
L=0.1mH
VDS Spike
10µs
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0: Nov 2015
12
26
A
EAS
34
mJ
VSPIKE
120
V
39
Steady-State
Steady-State
W
15.5
4.1
RθJA
RθJC
W
2.6
TJ, TSTG
Symbol
t ≤ 10s
A
IAS
PDSM
Junction and Storage Temperature Range
A
9.5
PD
TA=25°C
V
62
IDSM
TA=70°C
±20
23
IDM
TA=25°C
Units
V
37
ID
TC=100°C
Maximum
100
-55 to 150
Typ
25
50
2.6
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Max
30
60
3.2
°C
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON7232
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
100
Typ
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
1
TJ=55°C
1.5
±100
nA
2
2.5
V
11
13.5
20
24.5
16.5
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=10A
13
gFS
Forward Transconductance
VDS=5V, ID=12A
50
VSD
Diode Forward Voltage
IS=1A, VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=50V, f=1MHz
mΩ
S
1
V
37
A
1770
pF
145
pF
10
pF
1.2
2
Ω
26
40
nC
Qg(4.5V) Total Gate Charge
12
20
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=50V, ID=12A
0.5
mΩ
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
f=1MHz
µA
5
VGS=10V, ID=12A
Coss
Units
V
VDS=100V, VGS=0V
IDSS
Max
nC
4.5
nC
Gate Drain Charge
4.5
nC
Turn-On DelayTime
6
ns
3
ns
27
ns
VGS=10V, VDS=50V, RL=4.2Ω,
RGEN=3Ω
4
ns
IF=12A, di/dt=500A/µs
23
Body Diode Reverse Recovery Charge IF=12A, di/dt=500A/µs
96
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: Nov 2015
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Page 2 of 6
AON7232
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
80
10V
VDS=5V
4V
125°C
60
4.5V
3.5V
ID (A)
ID (A)
60
40
VGS=3V
20
40
20
25°C
0
0
0
1
2
3
4
0
5
1
2
3
4
5
6
VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
20
2.6
Normalized On-Resistance
2.4
RDS(ON) (mΩ)
17
VGS=4.5V
14
11
VGS=10V
8
VGS=10V
ID=12A
2.2
2
1.8
1.6
1.4
VGS=4.5V
ID=10A
1.2
1
0.8
5
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
32
1.0E+01
ID=12A
125°C
1.0E-01
IS (A)
RDS(ON) (mΩ)
1.0E+00
125°C
24
16
1.0E-02
25°C
1.0E-03
8
25°C
1.0E-04
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: Nov 2015
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note E)
Page 3 of 6
AON7232
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2500
VDS=50V
ID=12A
Ciss
2000
Capacitance (pF)
VGS (Volts)
8
6
4
2
1500
1000
Coss
500
Crss
0
0
0
5
10
15
20
25
30
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
5
10
15
20
300
TJ(Max)=150°C
TC=25°C
270
RDS(ON)
limited
240
210
1.0
DC
0.1
Power (W)
ID (Amps)
30
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
25
10µs
100µs
1ms
10ms
150
120
90
TJ(Max)=150°C
TC=25°C
0.0
0.01
180
60
30
0.1
1
10
100
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1000
0
1E-05 0.0001 0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=3.2°C/W
1
PDM
Single Pulse
0.1
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: Nov 2015
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Page 4 of 6
AON7232
50
50
40
40
Current rating ID (A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
10
30
20
10
0
0
0
25
50
75
100
125
150
0
25
TCASE (°C)
Figure 12: Power De-rating (Note F)
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PDM
Single Pulse
Ton
0.001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: Nov 2015
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Page 5 of 6
AON7232
Figure
A: Charge
Gate Charge
Test Circuit
& Waveforms
Gate
Test Circuit
& Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Figure B:Resistive
ResistiveSwitching
Switching Test
Test Circuit
Circuit&&Waveforms
Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Figure C:
UnclampedInductive
InductiveSwitching
Switching (UIS) Test
Unclamped
TestCircuit
Circuit&&Waveforms
Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Figure
D: Recovery
Diode Recovery
Test Circuit
& Waveforms
Diode
Test Circuit
& Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: Nov 2015
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6