AON7232 100V N-Channel MOSFET General Description Product Summary • Trench Power MV MOSFET Technology • Low RDS(ON) • Low Gate Charge • Logic Level Driven ID (at VGS=10V) VDS Applications 100V 37A RDS(ON) (at VGS=10V) < 13.5mΩ RDS(ON) (at VGS=4.5V) < 16.5mΩ 100% UIS Tested 100% Rg Tested • Synchronous Rectification in AC-DC/DC-DC Converter • Synchronous Rectification in Cell Phone Quick Charger DFN 3.3x3.3 Top View D Bottom View Top View Pin 1 1 8 2 7 3 6 4 5 G S Pin 1 Orderable Part Number Package Type Form Minimum Order Quantity AON7232 DFN 3.3x3.3 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VDS Parameter Drain-Source Voltage Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH VDS Spike 10µs TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: Nov 2015 12 26 A EAS 34 mJ VSPIKE 120 V 39 Steady-State Steady-State W 15.5 4.1 RθJA RθJC W 2.6 TJ, TSTG Symbol t ≤ 10s A IAS PDSM Junction and Storage Temperature Range A 9.5 PD TA=25°C V 62 IDSM TA=70°C ±20 23 IDM TA=25°C Units V 37 ID TC=100°C Maximum 100 -55 to 150 Typ 25 50 2.6 www.aosmd.com Max 30 60 3.2 °C Units °C/W °C/W °C/W Page 1 of 6 AON7232 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1 TJ=55°C 1.5 ±100 nA 2 2.5 V 11 13.5 20 24.5 16.5 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=10A 13 gFS Forward Transconductance VDS=5V, ID=12A 50 VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz mΩ S 1 V 37 A 1770 pF 145 pF 10 pF 1.2 2 Ω 26 40 nC Qg(4.5V) Total Gate Charge 12 20 Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=50V, ID=12A 0.5 mΩ SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs f=1MHz µA 5 VGS=10V, ID=12A Coss Units V VDS=100V, VGS=0V IDSS Max nC 4.5 nC Gate Drain Charge 4.5 nC Turn-On DelayTime 6 ns 3 ns 27 ns VGS=10V, VDS=50V, RL=4.2Ω, RGEN=3Ω 4 ns IF=12A, di/dt=500A/µs 23 Body Diode Reverse Recovery Charge IF=12A, di/dt=500A/µs 96 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: Nov 2015 www.aosmd.com Page 2 of 6 AON7232 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 10V VDS=5V 4V 125°C 60 4.5V 3.5V ID (A) ID (A) 60 40 VGS=3V 20 40 20 25°C 0 0 0 1 2 3 4 0 5 1 2 3 4 5 6 VGS (Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 20 2.6 Normalized On-Resistance 2.4 RDS(ON) (mΩ) 17 VGS=4.5V 14 11 VGS=10V 8 VGS=10V ID=12A 2.2 2 1.8 1.6 1.4 VGS=4.5V ID=10A 1.2 1 0.8 5 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 32 1.0E+01 ID=12A 125°C 1.0E-01 IS (A) RDS(ON) (mΩ) 1.0E+00 125°C 24 16 1.0E-02 25°C 1.0E-03 8 25°C 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: Nov 2015 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON7232 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2500 VDS=50V ID=12A Ciss 2000 Capacitance (pF) VGS (Volts) 8 6 4 2 1500 1000 Coss 500 Crss 0 0 0 5 10 15 20 25 30 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 300 TJ(Max)=150°C TC=25°C 270 RDS(ON) limited 240 210 1.0 DC 0.1 Power (W) ID (Amps) 30 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10.0 25 10µs 100µs 1ms 10ms 150 120 90 TJ(Max)=150°C TC=25°C 0.0 0.01 180 60 30 0.1 1 10 100 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1000 0 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=3.2°C/W 1 PDM Single Pulse 0.1 Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: Nov 2015 www.aosmd.com Page 4 of 6 AON7232 50 50 40 40 Current rating ID (A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 10 30 20 10 0 0 0 25 50 75 100 125 150 0 25 TCASE (°C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PDM Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: Nov 2015 www.aosmd.com Page 5 of 6 AON7232 Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: Nov 2015 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6