AON6156 45V N-Channel MOSFET General Description Product Summary • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications VDS Applications ID (at VGS=10V) 45V 100A RDS(ON) (at VGS=10V) < 2.6mΩ RDS(ON) (at VGS=4.5V) < 4mΩ 100% UIS Tested 100% Rg Tested • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications D DFN5x6 Top View Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AON6156 DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy VDS Spike Power Dissipation B L=0.3mH C 10µs TC=25°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: November 2015 36 32 A EAS 154 mJ VSPIKE 54 V 78 Steady-State Steady-State W 31 6.2 W 4.0 TJ, TSTG Symbol t ≤ 10s A IAS PDSM TA=70°C A 29 PD TC=100°C V 260 IDSM TA=70°C ±20 82 IDM TA=25°C Continuous Drain Current Units V 100 ID TC=100°C Maximum 45 RθJA RθJC -55 to 150 Typ 15 40 1.3 www.aosmd.com Max 20 50 1.6 °C Units °C/W °C/W °C/W Page 1 of 6 AON6156 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA V 1 TJ=55°C 1.5 ±100 nA 1.9 2.5 V 2.1 2.6 3.4 4.2 4.0 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A 3.1 gFS Forward Transconductance VDS=5V, ID=20A 100 VSD Diode Forward Voltage IS=1A, VGS=0V 0.67 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=22.5V, f=1MHz mΩ S 1 V 90 A 3975 pF 545 pF 62 pF 0.7 1.1 Ω 50 70 nC Qg(4.5V) Total Gate Charge 23 35 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=22.5V, ID=20A VGS=10V, VDS=22.5V, RL=1.125Ω, RGEN=3Ω 0.3 mΩ SWITCHING PARAMETERS Total Gate Charge Qg(10V) tD(off) f=1MHz µA 5 VGS=10V, ID=20A Coss Units 45 VDS=45V, VGS=0V IDSS Max 11 nC 5 nC 11 ns 4 ns 38 ns 4 ns IF=20A, di/dt=400A/µs 19 Body Diode Reverse Recovery Charge IF=20A, di/dt=400A/µs 43 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: November 2015 www.aosmd.com Page 2 of 6 AON6156 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 4.0V VDS=5V 3.5V 4.5V 80 80 10V 60 ID (A) ID (A) 60 40 125°C 40 20 25°C 20 VGS=3V 0 0 0 1 2 3 4 1 5 3 4 5 VGS (Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 5 Normalized On-Resistance 2 4 VGS=4.5V RDS(ON) (mΩ) 2 3 2 VGS=10V 1 1.8 VGS=10V ID=20A 1.6 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 8 1.0E+01 ID=20A 1.0E+00 125°C 1.0E-01 125°C IS (A) RDS(ON) (mΩ) 6 4 1.0E-02 25°C 1.0E-03 2 25°C 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: November 2015 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6156 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 6000 VDS=22.5V ID=20A 5000 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 4000 3000 2000 1000 0 0 0 10 20 30 40 50 60 0 Qg (nC) Figure 7: Gate-Charge Characteristics RDS(ON) limited 15 20 25 30 35 40 45 TJ(Max)=150°C TC=25°C 10µs 10µs 400 100µs 1ms 10ms 10.0 DC 1.0 TJ(Max)=150°C TC=25°C 0.0 0.01 0.1 300 200 100 0.1 1 10 VDS (Volts) 100 1000 0 0.0001 0.001 VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 10 500 Power (W) ID (Amps) 100.0 5 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 ZθJC Normalized Transient Thermal Resistance Coss Crss 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=1.6°C/W 1 PDM Single Pulse 0.1 Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: November 2015 www.aosmd.com Page 4 of 6 AON6156 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 150 Current rating ID (A) Power Dissipation (W) 80 60 40 20 100 50 0 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=50°C/W 0.1 PDM Single Pulse 0.01 Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: November 2015 www.aosmd.com Page 5 of 6 AON6156 Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: November 2015 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6