Datasheet

AO4268
60V N-Channel AlphaSGT TM
General Description
Product Summary
• Trench Power AlphaSGTTM technology
• Low RDS(ON)
• Low Gate Charge
ID (at VGS=10V)
60V
19A
RDS(ON) (at VGS=10V)
< 4.8mΩ
RDS(ON) (at VGS=4.5V)
< 6.5mΩ
VDS
Applications
100% UIS Tested
100% Rg Tested
• Synchronous Rectification for AC-DC Quick Charger
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AO4268
SO-8
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TA=25°C
Pulsed Drain Current C
L=0.3mH C
Avalanche energy
VDS Spike
Power Dissipation B
10µs
TA=25°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev.1.0: February 2016
30
A
EAS
135
mJ
72
V
3.1
Steady-State
Steady-State
W
2
TJ, TSTG
Symbol
t ≤ 10s
A
IAS
PD
Junction and Storage Temperature Range
V
76
VSPIKE
TA=70°C
±20
14.5
IDM
Avalanche Current C
Units
V
19
ID
TA=70°C
Maximum
60
RθJA
RθJL
-55 to 150
Typ
31
59
16
www.aosmd.com
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO4268
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
•
Trench
VGS(th)
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Typ
V
1
TJ=55°C
Gate-Body leakage current
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
1.3
±100
nA
1.8
2.3
V
4
4.8
6.3
7.6
6.5
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=16A
5.2
gFS
Forward Transconductance
VDS=5V, ID=19A
83
VSD
Diode Forward Voltage
IS=1A, VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
VGS=10V, ID=19A
Coss
Units
60
VDS=60V, VGS=0V
Gate Threshold Voltage
Max
VGS=0V, VDS=30V, f=1MHz
mΩ
mΩ
S
1
V
4
A
2500
pF
670
pF
65
pF
1.2
2
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
44
65
nC
Qg(4.5V) Total Gate Charge
21
30
Qgs
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
f=1MHz
VGS=10V, VDS=30V, ID=19A
0.5
nC
6.5
nC
Gate Drain Charge
8.5
nC
Turn-On DelayTime
7.5
ns
VGS=10V, VDS=30V, RL=1.6Ω,
RGEN=3Ω
6.5
ns
38
ns
8
ns
IF=19A, di/dt=500A/µs
22
Body Diode Reverse Recovery Charge IF=19A, di/dt=500A/µs
80
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: February 2016
www.aosmd.com
Page 2 of 5
AO4268
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
4.5V
VDS=5V
3.5V
80
80
60
60
ID (A)
ID (A)
• Trench
3V
40
125°C
40
25°C
20
20
VGS=2.5V
0
0
0
1
2
3
4
0
5
2
3
4
5
VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
2
Normalized On-Resistance
10
8
RDS(ON) (mΩ
Ω)
1
VGS=4.5V
6
4
VGS=10V
2
1.8
VGS=10V
ID=19A
1.6
1.4
1.2
VGS=4.5V
ID=16A
1
0.8
0
0
3
6
9
12
0
15
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature (Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
15
1.0E+02
ID=19A
1.0E+01
12
9
125°C
IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
125°C
1.0E-01
1.0E-02
6
25°C
1.0E-03
3
1.0E-04
25°C
0
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: February 2016
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note E)
1.0
Page 3 of 5
AO4268
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3500
10
VDS=30V
ID=19A
3000
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
2500
2000
1500
Coss
1000
2
500
0
Crss
0
0
10
20
30
40
50
60
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
25
30
1000
10µs
100.0
RDS(ON)
limited
100µs
1ms
1.0
10ms
100
10
TJ(Max)=150°C
TA=25°C
0.1
TJ(Max)=150°C
TA=25°C
10µs
Power (W)
ID (Amps)
15
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
10.0
10
DC
0.0
0.01
0.1
1
10
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
100
1
1E-05
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1
PDM
0.01
0.001
1E-05
Single Pulse
Ton
0.0001
0.001
0.01
0.1
1
T
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: February 2016
www.aosmd.com
Page 4 of 5
AO4268
Figure
A: Charge
Gate Charge
Test Circuit
& Waveforms
Gate
Test Circuit
& Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Figure B:Resistive
ResistiveSwitching
Switching Test
Test Circuit
Circuit&&Waveforms
Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Figure C:
UnclampedInductive
InductiveSwitching
Switching (UIS) Test
Unclamped
Test Circuit
Circuit&&Waveforms
Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Figure
D: Recovery
Diode Recovery
Test Circuit
& Waveforms
Diode
Test Circuit
& Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev.1.0: February 2016
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
www.aosmd.com
Page 5 of 5