AO4268 60V N-Channel AlphaSGT TM General Description Product Summary • Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge ID (at VGS=10V) 60V 19A RDS(ON) (at VGS=10V) < 4.8mΩ RDS(ON) (at VGS=4.5V) < 6.5mΩ VDS Applications 100% UIS Tested 100% Rg Tested • Synchronous Rectification for AC-DC Quick Charger SOIC-8 Top View D D D Bottom View D D G G S S S S Orderable Part Number Package Type Form Minimum Order Quantity AO4268 SO-8 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Pulsed Drain Current C L=0.3mH C Avalanche energy VDS Spike Power Dissipation B 10µs TA=25°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev.1.0: February 2016 30 A EAS 135 mJ 72 V 3.1 Steady-State Steady-State W 2 TJ, TSTG Symbol t ≤ 10s A IAS PD Junction and Storage Temperature Range V 76 VSPIKE TA=70°C ±20 14.5 IDM Avalanche Current C Units V 19 ID TA=70°C Maximum 60 RθJA RθJL -55 to 150 Typ 31 59 16 www.aosmd.com °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 5 AO4268 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS • Trench VGS(th) Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Typ V 1 TJ=55°C Gate-Body leakage current VDS=0V, VGS=±20V VDS=VGS, ID=250µA 1.3 ±100 nA 1.8 2.3 V 4 4.8 6.3 7.6 6.5 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=16A 5.2 gFS Forward Transconductance VDS=5V, ID=19A 83 VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 VGS=10V, ID=19A Coss Units 60 VDS=60V, VGS=0V Gate Threshold Voltage Max VGS=0V, VDS=30V, f=1MHz mΩ mΩ S 1 V 4 A 2500 pF 670 pF 65 pF 1.2 2 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 44 65 nC Qg(4.5V) Total Gate Charge 21 30 Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr f=1MHz VGS=10V, VDS=30V, ID=19A 0.5 nC 6.5 nC Gate Drain Charge 8.5 nC Turn-On DelayTime 7.5 ns VGS=10V, VDS=30V, RL=1.6Ω, RGEN=3Ω 6.5 ns 38 ns 8 ns IF=19A, di/dt=500A/µs 22 Body Diode Reverse Recovery Charge IF=19A, di/dt=500A/µs 80 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: February 2016 www.aosmd.com Page 2 of 5 AO4268 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V 4.5V VDS=5V 3.5V 80 80 60 60 ID (A) ID (A) • Trench 3V 40 125°C 40 25°C 20 20 VGS=2.5V 0 0 0 1 2 3 4 0 5 2 3 4 5 VGS (Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 2 Normalized On-Resistance 10 8 RDS(ON) (mΩ Ω) 1 VGS=4.5V 6 4 VGS=10V 2 1.8 VGS=10V ID=19A 1.6 1.4 1.2 VGS=4.5V ID=16A 1 0.8 0 0 3 6 9 12 0 15 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 15 1.0E+02 ID=19A 1.0E+01 12 9 125°C IS (A) RDS(ON) (mΩ Ω) 1.0E+00 125°C 1.0E-01 1.0E-02 6 25°C 1.0E-03 3 1.0E-04 25°C 0 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: February 2016 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 1.0 Page 3 of 5 AO4268 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3500 10 VDS=30V ID=19A 3000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2500 2000 1500 Coss 1000 2 500 0 Crss 0 0 10 20 30 40 50 60 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 20 25 30 1000 10µs 100.0 RDS(ON) limited 100µs 1ms 1.0 10ms 100 10 TJ(Max)=150°C TA=25°C 0.1 TJ(Max)=150°C TA=25°C 10µs Power (W) ID (Amps) 15 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 10.0 10 DC 0.0 0.01 0.1 1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 1 1E-05 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PDM 0.01 0.001 1E-05 Single Pulse Ton 0.0001 0.001 0.01 0.1 1 T 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: February 2016 www.aosmd.com Page 4 of 5 AO4268 Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped Test Circuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.1.0: February 2016 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5