Datasheet

AON7446
60V N-Channel MOSFET
SDMOS TM
General Description
Product Summary
The AON7446 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge and low Qrr.The result is outstanding efficiency
with controlled switching behavior. This universal
technology is well suited for PWM, load switching and
general purpose applications.
VDS
ID (at VGS=10V)
60V
8A
RDS(ON) (at VGS=10V)
< 145mΩ
RDS(ON) (at VGS = 7V)
< 160mΩ
100% UIS Tested
100% Rg Tested
DFN 3x3_EP
Bottom View
Top View
D
Top View
1
8
2
7
3
6
4
5
G
Pin 1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TC=25°C
Pulsed Drain Current C
Continuous Drain
Current
V
A
17
3.3
IDSM
TA=70°C
±20
5
IDM
TA=25°C
Units
V
8
ID
TC=100°C
Maximum
60
A
2.7
Avalanche Current C
IAS, IAR
10
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
5
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 1: Mar. 2011
3.1
Steady-State
Steady-State
RθJA
RθJC
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W
2
TJ, TSTG
Symbol
t ≤ 10s
W
7
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
16.7
PD
TC=100°C
-55 to 150
Typ
30
60
6.2
°C
Max
40
75
7.5
Units
°C/W
°C/W
°C/W
Page 1 of 7
AON7446
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=250µA, VGS=0V
10
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
On state drain current
VDS=VGS ID=250µA
2.2
VGS=10V, VDS=5V
17
TJ=55°C
50
100
nA
3.3
V
113
145
197
237
VGS=7V, ID=2.5A
118
160
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=3A
7.5
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.76
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
µA
2.7
VGS=10V, ID=3A
Crss
Units
V
VDS=60V, VGS=0V
Zero Gate Voltage Drain Current
RDS(ON)
Max
60
IDSS
ID(ON)
Typ
VGS=10V, VDS=30V, ID=3A
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=3A, dI/dt=500A/µs
mΩ
S
1
V
15
A
285
pF
190
237
17
25
33
pF
5
9
13
pF
0.7
1.4
2.1
Ω
3.5
4.4
5.3
nC
0.7
0.9
1.1
nC
0.7
1.1
1.6
nC
VGS=10V, VDS=30V, RL=10Ω,
RGEN=3Ω
IF=3A, dI/dt=500A/µs
mΩ
4.5
ns
1.5
ns
15
ns
1.5
ns
5.4
7.7
10
9
13
17
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be u sed if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: Mar. 2011
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Page 2 of 7
AON7446
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
15
10V
VDS=5V
7V
8
12
5V
6
ID (A)
ID(A)
9
4
4.5V
6
125°C
25°C
2
3
VGS=3.5V
0
0
0
1
2
3
4
2.5
5
3.5
4
4.5
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
140
2.2
130
Normalized On-Resistance
135
RDS(ON) (mΩ )
3
VGS=7V
125
120
115
110
VGS=10V
105
VGS=10V
ID=3A
2
1.8
17
5
2
VGS=7V
10
1.6
1.4
1.2
ID=2.5A
1
0.8
100
0
1
2
3
4
5
0
6
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18
Temperature (Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
300
1.0E+02
ID=3A
1.0E+01
250
40
1.0E+00
200
IS (A)
RDS(ON) (mΩ )
125°C
150
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
100
25°C
1.0E-04
50
4
5
6
7
8
9
10
1.0E-05
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: Mar. 2011
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON7446
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
350
10
VDS=30V
ID=3A
300
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
2
250
200
150
Coss
100
50
Crss
0
0
0
1
2
3
4
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
5
20
30
40
50
60
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
200
10µs
10µs
10.0
RDS(ON)
limited
160
100µs
1.0
Power (W)
ID (Amps)
10
1ms
10ms
DC
TJ(Max)=150°C
TC=25°C
17
5
2
10
120
80
0.1
TJ(Max)=150°C
TC=25°C
0.0
0.01
0.1
40
1
10
VDS (Volts)
100
1000
0
0.0001
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junctionto-Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=7.5°C/W
0.1
PD
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: Mar. 2011
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Page 4 of 7
AON7446
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
TA=25°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
100.0
TA=100°C
10.0
TA=150°C
TA=125°C
1.0
15
10
5
0
1
10
100
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
10
TA=25°C
1000
Power (W)
Current rating ID(A)
8
6
4
17
5
2
10
100
10
2
1
0.00001
0
0
Zθ JA Normalized Transient
Thermal Resistance
10
1
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
150
0.001
0.1
10 0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
40
0.1
PD
Single Pulse
0.01
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
Rev 1: Mar. 2011
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Page 5 of 7
AON7446
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
12
10
10
8
8
3
25ºC
Qrr
6
8
125ºC
4
2
6
4
2
0
1
2
3
4
5
0
0
0
IS (A)
Figure 17: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
1
2
3
4
5
6
IS (A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
10
Is=4A
0.5
125ºC
6
25
25ºC
2
0
1
1.5
S
25ºC
2.5
25ºC
trr
Irm
4
125ºC
di/dt=500A/µs
S
12
trr (ns)
16
Irm (A)
di/dt=500A/µs
Qrr (nC)
12
125ºC
15
2.5
Is=4A
125ºC
20
8
12
2
10
4
125º
9
25ºC
6
Irm
5
2
25ºC
1
125º
3
0.5
S
25ºC
0
300
400
500
600
0
700
di/dt (A/µ
µs)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Rev 1: Mar. 2011
1.5
trr
S
6
25ºC
trr (ns)
Qrr
15
Irm (A)
Qrr (nC)
125ºC
0
300
400
500
600
0
700
di/dt (A/µ
µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
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Page 6 of 7
AON7446
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 1: Mar. 2011
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 7 of 7