AON7446 60V N-Channel MOSFET SDMOS TM General Description Product Summary The AON7446 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS ID (at VGS=10V) 60V 8A RDS(ON) (at VGS=10V) < 145mΩ RDS(ON) (at VGS = 7V) < 160mΩ 100% UIS Tested 100% Rg Tested DFN 3x3_EP Bottom View Top View D Top View 1 8 2 7 3 6 4 5 G Pin 1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C Pulsed Drain Current C Continuous Drain Current V A 17 3.3 IDSM TA=70°C ±20 5 IDM TA=25°C Units V 8 ID TC=100°C Maximum 60 A 2.7 Avalanche Current C IAS, IAR 10 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 5 mJ Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 1: Mar. 2011 3.1 Steady-State Steady-State RθJA RθJC www.aosmd.com W 2 TJ, TSTG Symbol t ≤ 10s W 7 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 16.7 PD TC=100°C -55 to 150 Typ 30 60 6.2 °C Max 40 75 7.5 Units °C/W °C/W °C/W Page 1 of 7 AON7446 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V 10 IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 2.2 VGS=10V, VDS=5V 17 TJ=55°C 50 100 nA 3.3 V 113 145 197 237 VGS=7V, ID=2.5A 118 160 Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=3A 7.5 VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr µA 2.7 VGS=10V, ID=3A Crss Units V VDS=60V, VGS=0V Zero Gate Voltage Drain Current RDS(ON) Max 60 IDSS ID(ON) Typ VGS=10V, VDS=30V, ID=3A Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=3A, dI/dt=500A/µs mΩ S 1 V 15 A 285 pF 190 237 17 25 33 pF 5 9 13 pF 0.7 1.4 2.1 Ω 3.5 4.4 5.3 nC 0.7 0.9 1.1 nC 0.7 1.1 1.6 nC VGS=10V, VDS=30V, RL=10Ω, RGEN=3Ω IF=3A, dI/dt=500A/µs mΩ 4.5 ns 1.5 ns 15 ns 1.5 ns 5.4 7.7 10 9 13 17 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be u sed if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: Mar. 2011 www.aosmd.com Page 2 of 7 AON7446 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 15 10V VDS=5V 7V 8 12 5V 6 ID (A) ID(A) 9 4 4.5V 6 125°C 25°C 2 3 VGS=3.5V 0 0 0 1 2 3 4 2.5 5 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 140 2.2 130 Normalized On-Resistance 135 RDS(ON) (mΩ ) 3 VGS=7V 125 120 115 110 VGS=10V 105 VGS=10V ID=3A 2 1.8 17 5 2 VGS=7V 10 1.6 1.4 1.2 ID=2.5A 1 0.8 100 0 1 2 3 4 5 0 6 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18 Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 300 1.0E+02 ID=3A 1.0E+01 250 40 1.0E+00 200 IS (A) RDS(ON) (mΩ ) 125°C 150 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 100 25°C 1.0E-04 50 4 5 6 7 8 9 10 1.0E-05 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 1: Mar. 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AON7446 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 350 10 VDS=30V ID=3A 300 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 250 200 150 Coss 100 50 Crss 0 0 0 1 2 3 4 Qg (nC) Figure 7: Gate-Charge Characteristics 0 5 20 30 40 50 60 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 200 10µs 10µs 10.0 RDS(ON) limited 160 100µs 1.0 Power (W) ID (Amps) 10 1ms 10ms DC TJ(Max)=150°C TC=25°C 17 5 2 10 120 80 0.1 TJ(Max)=150°C TC=25°C 0.0 0.01 0.1 40 1 10 VDS (Volts) 100 1000 0 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junctionto-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=7.5°C/W 0.1 PD Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1: Mar. 2011 www.aosmd.com Page 4 of 7 AON7446 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 100.0 TA=100°C 10.0 TA=150°C TA=125°C 1.0 15 10 5 0 1 10 100 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 10000 10 TA=25°C 1000 Power (W) Current rating ID(A) 8 6 4 17 5 2 10 100 10 2 1 0.00001 0 0 Zθ JA Normalized Transient Thermal Resistance 10 1 25 50 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) 150 0.001 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 40 0.1 PD Single Pulse 0.01 Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) Rev 1: Mar. 2011 www.aosmd.com Page 5 of 7 AON7446 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 12 10 10 8 8 3 25ºC Qrr 6 8 125ºC 4 2 6 4 2 0 1 2 3 4 5 0 0 0 IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 1 2 3 4 5 6 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 10 Is=4A 0.5 125ºC 6 25 25ºC 2 0 1 1.5 S 25ºC 2.5 25ºC trr Irm 4 125ºC di/dt=500A/µs S 12 trr (ns) 16 Irm (A) di/dt=500A/µs Qrr (nC) 12 125ºC 15 2.5 Is=4A 125ºC 20 8 12 2 10 4 125º 9 25ºC 6 Irm 5 2 25ºC 1 125º 3 0.5 S 25ºC 0 300 400 500 600 0 700 di/dt (A/µ µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev 1: Mar. 2011 1.5 trr S 6 25ºC trr (ns) Qrr 15 Irm (A) Qrr (nC) 125ºC 0 300 400 500 600 0 700 di/dt (A/µ µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt www.aosmd.com Page 6 of 7 AON7446 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 1: Mar. 2011 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7