AON7932 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary The AON7932 is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN3x3A package. The Q1 "High Side" MOSFET is designed to minimize switching losses. The Q2 "Low Side" MOSFET use advance trench technology with a monolithically integrated Schotty to provide excellent RDS(ON) and low gate charge. The AON7932 is well suited for use in compact DC/DC converter applications. Top View Power DFN3x3A S2 S2 RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) G1 G2 (S1/D2) D1 D1 D1 D1 D1 D1 TC=25°C Avalanche Current C Power Dissipation A TA=25°C G1 D1 8 Q1 7 2 3 6 Q2 5 4 TC=25°C <15mΩ TA=25°C D1 3 6 S2 S2 D1 2 7 S2 S2 G1 1 8 G2 D1 S1/D2 Max Q2 Units V ±12 V 35 A 6.6 8.1 5.3 6.5 IAS, IAR 18 17 A EAS, EAR 16 14 mJ 23 25 9 10 Thermal Characteristics Parameter Symbol Steady-State S2 22 TJ, TSTG Steady-State S2 30 5 110 Junction and Storage Temperature Range t ≤ 10s D1 4 70 PDSM TA=70°C <12mΩ 16 PD TC=100°C Rev.3.0: February 2015 <30mΩ G2 26 IDSM TA=70°C Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 35A Bottom View 1 IDM Avalanche Energy L=0.1mH C Power Dissipation B 26A <20mΩ 100% Rg Tested ID TC=100°C Pulsed Drain Current C Continuous Drain Current Q2 30V 100% UIS Tested Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 VDS Drain-Source Voltage ±20 VGS Gate-Source Voltage Continuous Drain Current Q1 30V Top View Bottom View S2 VDS ID (at VGS=10V) RθJA RθJC 1.4 1.4 0.9 0.9 -55 to 150 Typ Q1 40 70 4.5 www.aosmd.com Max Q1 50 90 5.4 Typ Q2 40 70 4.2 A W W °C Max Q2 50 90 5 Units °C/W °C/W °C/W Page 1 of 1 AON7932 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V VDS=30V, VGS=0V 5 Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.4 ID(ON) On state drain current VGS=10V, VDS=5V 70 RDS(ON) Static Drain-Source On-Resistance 100 VGS=10V, ID=6.6A TJ=125°C VGS=4.5V, ID=5.3A gFS Forward Transconductance Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current VDS=5V, ID=6.6A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz Units V 1 TJ=55°C VSD Max 30 IGSS IS Typ 1.9 2.4 µA nA V A 16 20 24 29 23 30 22 0.75 mΩ mΩ S 1 V 20 A 300 380 460 pF 110 160 210 pF 7 13 22 pF 0.7 1.5 2.3 Ω 5.4 6.5 nC 2.3 VGS=10V, VDS=15V, ID=6.6A nC 1.3 nC 1 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=6.6A, dI/dt=500A/µs 6.8 8.5 10.2 Qrr Body Diode Reverse Recovery Charge IF=6.6A, dI/dt=500A/µs 12.8 16 19.2 VGS=10V, VDS=15V, RL=2.3Ω, RGEN=3Ω 10 ns 3 ns 15 ns 5 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.3.0: February 2015 www.aosmd.com Page 1 of 1 AON7932 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 80 VDS=5V 10V 25 7V 20 4.5V 40 ID(A) ID (A) 60 4V 125°C 10 3.5V 20 15 25°C 5 VGS=2.5V 0 0 0 1 2 3 4 5 0 0.5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1.5 2 2.5 3 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 2 Normalized On-Resistance 30 VGS=4.5V 25 RDS(ON) (mΩ) 1 20 15 VGS=10V 10 0 3 6 9 12 VGS=10V ID=6.6A 1.8 1.6 17 VGS=4.5V 5 ID=5.3A 1.4 2 10 1.2 1 0.8 15 0 25 50 75 100 125 150 175 200 1.2 1.4 Temperature (°C) 0 18Temperature Figure 4: On-Resistance vs. Junction (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 40 ID=6.6A 1.0E+01 40 1.0E+00 30 125°C 1.0E-01 25 125°C 20 IS (A) RDS(ON) (mΩ) 35 25°C 1.0E-02 1.0E-03 15 25°C 10 2 1.0E-04 1.0E-05 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.3.0: February 2015 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 1 of 1 AON7932 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 10 VDS=15V ID=6.6A 500 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 400 300 Coss 200 100 0 Crss 0 0 1 2 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 6 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 200 RDS(ON) limited 10.0 100us 1ms 1.0 DC TJ(Max)=150°C TC=25°C 0.1 0.1 1 VDS (Volts) 120 80 0 10 0.0001 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 1 TJ(Max)=150° C 40 0.0 0.01 160 10µs Power (W) ID (Amps) 100.0 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0.001 0.01 0.1 1 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=5.4°C/W PD 0.1 Ton 0.01 Single Pulse 0.00001 Rev.3.0: February 2015 0.0001 0.001 T 0.01 0.1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.aosmd.com 1 Page 1 of 1 AON7932 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 TA=25°C TA=100°C Power Dissipation (W) IAR (A) Peak Avalanche Current 100.0 10.0 TA=150°C TA=125°C 25 20 15 10 5 0 1.0 0 1E-06 1E-05 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 50 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) 150 10000 30 25 TA=25°C 1000 20 Power (W) Current rating ID(A) 25 15 10 17 5 2 10 100 10 5 1 0 0 25 50 75 100 125 0.00001 150 ZθJA Normalized Transient Thermal Resistance TCASE (°C) Figure 14: Current De-rating (Note F) 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=90°C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.3.0: February 2015 www.aosmd.com Page 1 of 1 AON7932 Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=10mA, VGS=0V VDS=30V, VGS=0V 500 IGSS Gate-Body leakage current VDS=0V, VGS= ±12V Gate Threshold Voltage VDS=VGS ID=250µA 1.1 ID(ON) On state drain current VGS=10V, VDS=5V 110 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=8.1A TJ=125°C VGS=4.5V, ID=6.5A gFS Forward Transconductance IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VDS=5V, ID=8.1A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz Units V 0.5 TJ=55°C VSD Max 30 VGS(th) IS Typ 1.6 mA 100 nA 2.1 V A 10 12 15 18 12 15 55 0.45 mΩ mΩ S 0.7 V 30 A 810 1020 1230 pF 77 111 150 pF 45 75 130 pF 0.5 1 1.5 Ω 19 23 nC VGS=10V, VDS=15V, ID=8.1A 9 nC 4 nC 3 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=8.1A, dI/dt=500A/µs 4 5.4 7 Qrr Body Diode Reverse Recovery Charge IF=8.1A, dI/dt=500A/µs 4 5.3 7 VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω 11 ns 5 ns 29 ns 6 ns ns nC 1in2 A. The value of RθJA is measured with the device mounted on FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.3.0: February 2015 www.aosmd.com Page 1 of 1 AON7932 Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 3.5V 10V VDS=5V 60 60 40 ID(A) ID (A) 3V 40 Vgs=2.5V 20 125°C 25°C 20 0 0 0 1 2 3 4 5 0 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 20 Normalized On-Resistance 2 16 RDS(ON) (mΩ) 1 VGS=4.5V 12 8 VGS=10V 4 VGS=10V ID=8.1A 1.8 1.6 17 1.4 VGS=4.5V 5 ID=6.5A 2 1.2 10 1 0.8 0 0 3 0 6 9 12 15 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 40 ID=8.1A 35 40 30 25 1.0E+00 125°C IS (A) RDS(ON) (mΩ) 125°C 1.0E+01 20 25°C 1.0E-01 15 10 1.0E-02 25°C 5 1.0E-03 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.3.0: February 2015 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 1 of 1 AON7932 Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=15V ID=8.1A 1000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 800 600 400 Crss 200 0 Coss 0 0 4 8 12 16 Qg (nC) Figure 7: Gate-Charge Characteristics 20 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 200 10µs RDS(ON) 10.0 1ms DC 1.0 TJ(Max)=150°C TC=25°C 0.1 120 80 40 0.0 0.01 0.1 1 VDS (Volts) 0 10 0.0001 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 1 TJ(Max)=150°C TC=25°C 160 100µs Power (W) ID (Amps) 100.0 30 0.001 0.01 0.1 1 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=5°C/W 40 PD 0.1 Single Pulse Ton T 0.01 0.00001 Rev.3.0: February 2015 0.0001 0.001 0.01 0.1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) www.aosmd.com 1 Page 1 of 1 AON7932 Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS IAR (A) Peak Avalanche Current 100 30 TA=25°C 10 Power Dissipation (W) TA=100°C TA=150°C TA=125°C 25 20 15 10 5 0 1 1E-06 1E-05 0.0001 0 0.001 25 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 50 10000 40 1000 Power (W) Current rating ID(A) 50 30 20 TA=25°C 17 5 2 10 100 10 10 1 0 0.00001 ZθJA Normalized Transient Thermal Resistance 0 25 50 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) 150 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 0.001 0.1 10 0 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=90°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) Rev.3.0: February 2015 www.aosmd.com Page 1 of 1 AON7932 Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 0.9 20A 0.8 1.0E-02 0.6 IR (A) VSD (V) VDS=30V 1.0E-04 VDS=15V 0.5 0.4 0.3 IS=1A 0.2 1.0E-05 0.1 0 0 50 100 150 200 Temperature (°C) Figure 17: Diode Reverse Leakage Current vs. Junction Temperature 125ºC 25ºC 10 8 8 6 6 8 Qrr 4 4 125ºC Irm 5 10 15 20 25 8 2 0 0 125ºC 2 125ºC Irm 25ºC 200 10 15 20 0 25 30 4 3.5 3 trr 25ºC 6 4 1.5 125ºC S 2 600 800 1000 di/dt (A/µs) Figure 20: Diode Reverse Recovery Charge and Peak Current vs. di/dt www.aosmd.com 2.5 2 125ºC 400 Rev.3.0: February 2015 5 25ºC 0 0.5 25ºC 8 3 1 S Is=20A trr (ns) 6 Qrr 2 1.5 10 Irm (A) 25ºC 4 0 2.5 25ºC IS (A) Figure 19: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 12 9 3 125ºC 0 30 15 125ºC 3.5 4 2 Is=20A 6 4 di/dt=800A/µs trr IS (A) Figure 18: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 0 100 150 200 Temperature (°C) Figure 18: Diode Forward voltage vs. Junction Temperature 25ºC 0 0 50 S di/dt=800A/µs 12 10 trr (ns) 16 Irm (A) 0 S 1.0E-06 Qrr (nC) 5A 0.7 1.0E-03 Qrr (nC) 10A 1 0.5 0 0 200 400 600 800 1000 di/dt (A/µs) Figure 21: Diode Reverse Recovery Time and Softness Factor vs. di/dt Page 1 of 1 AON7932 Gate Charge Test Circuit & Waveform Vgs + VDC - Qg 10V + Vds - Qgs VDC DUT Qgd Vgs Ig RL Vds Vds 90% + Vdd - DUT Vgs Rg Charge Resistive Switching Test Circuit & Waveforms VDC Vgs 10% Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds Vds Id Rg BVDSS + Vdd - Vgs Vgs VDC I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Vds - Qrr = - Idt DUT Isd Vgs Ig Rev.3.0: February 2015 Vgs Isd L + Vdd - VDC Vds www.aosmd.com IF t rr dI/dt I RM Vdd Page 1 of 1