AON7444 60V N-Channel MOSFET SDMOS TM General Description Product Summary The AON7444 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS 60V 33A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 22mΩ RDS(ON) (at VGS=4.5V) < 26mΩ 100% UIS Tested 100% Rg Tested DFN 3x3 EP Top View D Top View Bottom 1 8 2 7 3 6 4 5 G S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev 2: Mar. 2011 IAS, IAR 30 A EAS, EAR 45 mJ 42 Steady-State Steady-State W 17 3.1 RθJA RθJC www.aosmd.com W 2 TJ, TSTG Symbol t ≤ 10s A 7 PDSM Junction and Storage Temperature Range A 9 PD TA=25°C V 75 IDSM TA=70°C ±20 21 IDM TA=25°C Continuous Drain Current Avalanche Current C Units V 33 ID TC=100°C Maximum 60 -55 to 150 Typ 30 60 2.5 °C Max 40 75 3 Units °C/W °C/W °C/W Page 1 of 7 AON7444 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V Typ 60 10 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 75 TJ=55°C 50 VDS=0V, VGS= ±20V ±100 VGS=10V, ID=9A 2 18 22 28 34 20.5 26 Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=9A 45 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 VGS=4.5V, ID=8A Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance 2.6 µA nA V A RDS(ON) TJ=125°C Units V VDS=60V, VGS=0V IDSS IS Max mΩ mΩ S 1 V 40 A pF 1340 1680 2000 100 150 195 pF 35 60 85 pF 0.4 0.9 1.4 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 22 28 34 nC Qg(4.5V) Total Gate Charge 10 13 16 nC 5.5 6.9 8.3 nC 2 3.7 5 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, ID=9A VGS=10V, VDS=30V, RL=3.3Ω, RGEN=3Ω IF=9A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=9A, dI/dt=500A/µs 6 ns 2.4 ns 24 ns 2.7 ns 9 13 17 24 34 44 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be u sed if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 2: Mar. 2011 www.aosmd.com Page 2 of 7 AON7444 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 80 10V 4.5V VDS=5V 6V 40 60 4V ID(A) ID (A) 30 40 20 3.5V 20 VGS=3V 0 0 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1 5 1.5 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) Normalized On-Resistance 1.8 25 VGS=4.5V 20 VGS=10V 15 VGS=10V ID=9A 1.6 1.4 17 VGS=4.5V 5 ID=8A 1.2 2 10 1 0.8 10 0 5 0 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 10 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 45 1.0E+02 ID=9A 40 1.0E+01 40 35 1.0E+00 125°C 30 IS (A) RDS(ON) (mΩ ) 25°C 0 1 30 RDS(ON) (mΩ ) 125°C 10 25 1.0E-02 20 1.0E-03 15 125°C 1.0E-01 25°C 1.0E-04 25°C 10 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 2: Mar. 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AON7444 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2400 10 VDS=30V ID=9A 2000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 1600 1200 800 400 Coss Crss 0 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 30 0 20 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics 60 200 1000 10µs 100 10µs RDS(ON) limited 10 1 DC 100µs 1ms 10ms TJ(Max)=150°C TC=25°C 0.1 0.1 17 5 2 10 120 80 40 0.01 0.01 TJ(Max)=150°C TC=25°C 160 Power (W) ID (Amps) 10 1 10 VDS (Volts) 100 1000 0 0.0001 0.001 0.01 0.1 1 10 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=3°C/W 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 2: Mar. 2011 www.aosmd.com Page 4 of 7 AON7444 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 IAR (A) Peak Avalanche Current 50 Power Dissipation (W) TA=25°C TA=100°C TA=150°C TA=125°C 40 30 20 10 0 10 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 40 10000 30 1000 25 50 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) 150 Power (W) Current rating ID(A) TA=25°C 20 17 5 2 10 100 10 10 1 0.00001 0 0 25 50 75 100 125 150 0.001 0.1 10 0 1000 18 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 2: Mar. 2011 www.aosmd.com Page 5 of 7 AON7444 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 75 20 20 3 di/dt=800A/µs 125ºC 60 2.5 16 125ºC 2 Qrr 30 12 trr (ns) 25ºC Irm (A) Qrr (nC) 15 45 1.5 25ºC trr 8 10 1 125ºC 15 25ºC 4 Irm 0 0 5 10 15 20 5 25 125ºC 0 30 0 IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 0 10 15 20 25 30 25 2.5 125ºC Is=20A 5 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 25 70 60 0.5 S 25ºC S di/dt=800A/µs Is=20A 125ºC 20 20 15 15 2 30 Qrr 10 125ºC 1.5 25ºC trr S trr (ns) 25ºC 40 Irm (A) Qrr (nC) 50 10 1 25ºC 20 10 5 25ºC Irm 0.5 S 125º 0 0 0 5 200 400 600 800 1000 0 0 0 di/dt (A/µ µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev 2: Mar. 2011 www.aosmd.com 200 400 600 800 1000 di/dt (A/µ µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt Page 6 of 7 AON7444 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 2: Mar. 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7