技术信息/TechnicalInformation IGBT-模块 IGBT-Module DF200R12W1H3F_B11 J VCES = 1200V IC nom = 30A / ICRM = 60A 典型应用 • 太阳能应用 TypicalApplications • Solarapplications 电气特性 • 低开关损耗 • thinQH碳化硅肖特基二极管1200V ElectricalFeatures • Lowswitchinglosses • thinQHSiCSchottkydiode1200V 机械特性 • 低热阻的三氧化二铝（Al2O3衬底 • 集成NTC温度传感器 • 紧凑型设计 • PressFIT压接技术 MechanicalFeatures • Al2O3substratewithlowthermalresistance • IntegratedNTCtemperaturesensor • Compactdesign • PressFITcontacttechnology ModuleLabelCode BarcodeCode128 DMX-Code preparedby:CM dateofpublication:2016-02-23 approvedby:AKDA revision:V3.0 ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 ULapproved(E83335) 1 技术信息/TechnicalInformation IGBT-模块 IGBT-Module DF200R12W1H3F_B11 反极性保护二极管A/Inverse-polarityprotectiondiodeA 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C VRRM 1200 V 最大正向均方根电流(每芯片) MaximumRMSforwardcurrentperchip TC = 80°C IFRMSM 50 A 最大整流器输出均方根电流 MaximumRMScurrentatrectifieroutput TC = 80°C IRMSM 60 A 正向浪涌电流 Surgeforwardcurrent tp = 10 ms, Tvj = 25°C tp = 10 ms, Tvj = 150°C IFSM 360 290 A A I2t-值 I²t-value tp = 10 ms, Tvj = 25°C tp = 10 ms, Tvj = 150°C I²t 650 420 A²s A²s 特征值/CharacteristicValues min. typ. max. 正向电压 Forwardvoltage Tvj = 150°C, IF = 30 A VF 0,95 V 斜率电阻 Sloperesistance Tvj = 150°C rT 0,10 mΩ 反向电流 Reversecurrent Tvj = 150°C, VR = 1200 V IR 0,10 mA 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 0,800 0,900 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,800 在开关状态下温度 Temperatureunderswitchingconditions Tvj op preparedby:CM dateofpublication:2016-02-23 approvedby:AKDA revision:V3.0 2 -40 K/W 125 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-Module DF200R12W1H3F_B11 IGBT,斩波器/IGBT-Chopper 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C 集电极电流 Implementedcollectorcurrent VCES 1200 V ICN 100 A 连续集电极直流电流 ContinuousDCcollectorcurrent TC = 80°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C IC nom IC 30 50 集电极重复峰值电流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 200 A 总功率损耗 Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 375 W VGES +/-20 V 栅极－发射极峰值电压 Gate-emitterpeakvoltage 特征值/CharacteristicValues 集电极－发射极饱和电压 Collector-emittersaturationvoltage min. IC = 30 A, VGE = 15 V IC = 30 A, VGE = 15 V IC = 30 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C VCE sat A A typ. max. 1,30 1,35 1,35 1,45 V V V 5,80 6,45 V 栅极阈值电压 Gatethresholdvoltage IC = 3,80 mA, VCE = VGE, Tvj = 25°C 栅极电荷 Gatecharge VGE = -15 V ... +15 V QG 0,80 µC 内部栅极电阻 Internalgateresistor Tvj = 25°C RGint 0,0 Ω 输入电容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 6,15 nF 反向传输电容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,345 nF 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 100 nA VGEth 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = 30 A, VCE = 600 V VGE = ±15 V RGon = 4,7 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 上升时间(电感负载) Risetime,inductiveload IC = 30 A, VCE = 600 V VGE = ±15 V RGon = 4,7 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = 30 A, VCE = 600 V VGE = ±15 V RGoff = 4,7 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 下降时间(电感负载) Falltime,inductiveload IC = 30 A, VCE = 600 V VGE = ±15 V RGoff = 4,7 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = 30 A, VCE = 600 V, LS = 40 nH Tvj = 25°C VGE = ±15 V, di/dt = 2200 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 4,7 Ω Tvj = 150°C 关断损耗能量(每脉冲） Turn-offenergylossperpulse 5,05 0,018 0,017 0,017 µs µs µs 0,01 0,01 0,01 µs µs µs 0,30 0,40 0,44 µs µs µs 0,014 0,03 0,035 µs µs µs Eon 0,73 0,78 0,80 mJ mJ mJ IC = 30 A, VCE = 600 V, LS = 40 nH Tvj = 25°C VGE = ±15 V, du/dt = 2800 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 4,7 Ω Tvj = 150°C Eoff 1,30 2,00 2,40 mJ mJ mJ 短路数据 SCdata VGE ≤ 15 V, VCC = 800 V VCEmax = VCES -LsCE ·di/dt ISC 360 A 结－外壳热阻 Thermalresistance,junctiontocase 每个IGBT/perIGBT preparedby:CM dateofpublication:2016-02-23 approvedby:AKDA revision:V3.0 tP ≤ 10 µs, Tvj = 150°C td on tr td off tf RthJC 3 0,350 0,400 K/W 技术信息/TechnicalInformation IGBT-模块 IGBT-Module DF200R12W1H3F_B11 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个IGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 在开关状态下温度 Temperatureunderswitchingconditions 0,350 Tvj op -40 K/W 150 °C Diode-斩波器/Diode-Chopper 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage VRRM Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 25°C VR = 0 V, tP = 10 ms, Tvj = 125°C 1200 V IF 30 A IFRM 30 A I²t 150 110 特征值/CharacteristicValues min. typ. max. 1,60 2,20 1,95 A²s A²s 正向电压 Forwardvoltage IF = 30 A, VGE = 0 V IF = 30 A, VGE = 0 V Tvj = 25°C Tvj = 125°C VF 反向恢复峰值电流 Peakreverserecoverycurrent IF = 30 A, - diF/dt = 2200 A/µs (Tvj=150°C) VR = 600 V Tvj = 25°C Tvj = 125°C Tvj = 150°C IRM 10,0 10,0 A A 恢复电荷 Recoveredcharge IF = 30 A, - diF/dt = 2200 A/µs (Tvj=150°C) VR = 600 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Qr 0,30 0,50 µC µC 反向恢复损耗（每脉冲） Reverserecoveryenergy IF = 30 A, - diF/dt = 2200 A/µs (Tvj=150°C) VR = 600 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Erec 0,06 0,06 mJ mJ 结－外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 0,500 0,600 K/W 外壳－散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,450 在开关状态下温度 Temperatureunderswitchingconditions Tvj op -40 V V K/W 150 °C 负温度系数热敏电阻/NTC-Thermistor 特征值/CharacteristicValues min. typ. max. 额定电阻值 Ratedresistance TNTC = 25°C R100偏差 DeviationofR100 TNTC = 100°C, R100 = 493 Ω 耗散功率 Powerdissipation TNTC = 25°C B-值 B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B-值 B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B-值 B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K R25 ∆R/R 5,00 -5 P25 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. preparedby:CM dateofpublication:2016-02-23 approvedby:AKDA revision:V3.0 4 kΩ 5 % 20,0 mW 技术信息/TechnicalInformation IGBT-模块 IGBT-Module DF200R12W1H3F_B11 模块/Module 绝缘测试电压 Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. 内部绝缘 Internalisolation 基本绝缘(class1,IEC61140) basicinsulation(class1,IEC61140) Al2O3 爬电距离 Creepagedistance 端子至散热器/terminaltoheatsink 端子至端子/terminaltoterminal 11,5 6,3 mm 电气间隙 Clearance 端子至散热器/terminaltoheatsink 端子至端子/terminaltoterminal 10,0 5,0 mm > 200 相对电痕指数 Comperativetrackingindex VISOL CTI min. 杂散电感,模块 Strayinductancemodule 模块引线电阻,端子-芯片 Moduleleadresistance,terminals-chip TC=25°C,每个开关/perswitch 储存温度 Storagetemperature preparedby:CM dateofpublication:2016-02-23 approvedby:AKDA revision:V3.0 5 max. 30 nH RCC'+EE' 5,00 mΩ G Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25A rms per connector pin. typ. LsCE Tstg 重量 Weight kV 2,5 -40 125 24 °C g 技术信息/TechnicalInformation IGBT-模块 IGBT-Module DF200R12W1H3F_B11 正向偏压特性反极性保护二极管A（典型) forwardcharacteristicofInverse-polarityprotectiondiodeA (typical) IF=f(VF) 输出特性IGBT,斩波器（典型) outputcharacteristicIGBT-Chopper(typical) IC=f(VCE) VGE=15V 60 60 Tvj = 25°C Tvj = 125°C Tvj = 150°C 50 50 40 40 IC [A] IF [A] Tvj = 25°C Tvj = 150°C 30 20 20 10 10 0 0,0 0,2 0,4 0,6 0,8 VF [V] 1,0 1,2 0 1,4 输出特性IGBT,斩波器（典型) outputcharacteristicIGBT-Chopper(typical) IC=f(VCE) Tvj=150°C 0,2 0,4 0,6 0,8 1,0 1,2 VCE [V] 1,4 1,6 1,8 2,0 60 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 50 Tvj = 25°C Tvj = 125°C Tvj = 150°C 50 40 IC [A] 40 30 30 20 20 10 10 0 0,0 传输特性IGBT,斩波器(典型) transfercharacteristicIGBT-Chopper(typical) IC=f(VGE) VCE=20V 60 IC [A] 30 0,0 0,5 1,0 1,5 VCE [V] 2,0 2,5 0 3,0 5 6 7 8 VGE [V] preparedby:CM dateofpublication:2016-02-23 approvedby:AKDA revision:V3.0 6 9 10 技术信息/TechnicalInformation IGBT-模块 IGBT-Module DF200R12W1H3F_B11 开关损耗IGBT,斩波器（典型) switchinglossesIGBT-Chopper(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=4.7Ω,RGoff=4.7Ω,VCE=600V 开关损耗IGBT,斩波器（典型) switchinglossesIGBT-Chopper(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=30A,VCE=600V 4,5 6,0 Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C 4,0 5,0 3,5 4,5 3,0 4,0 3,5 2,5 E [mJ] E [mJ] Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150°C 5,5 2,0 3,0 2,5 1,5 2,0 1,5 1,0 1,0 0,5 0,0 0,5 0 10 20 30 IC [V] 40 50 0,0 60 瞬态热阻抗IGBT,斩波器 transientthermalimpedanceIGBT-Chopper ZthJH=f(t) 0 5 10 15 20 25 RG [Ω] 30 35 40 45 反偏安全工作区IGBT,斩波器（RBSOA） reversebiassafeoperatingareaIGBT-Chopper(RBSOA) IC=f(VCE) VGE=±15V,RGoff=4.7Ω,Tvj=150°C 10 70 ZthJH : IGBT IC, Modul IC, Chip 60 50 1 IC [A] ZthJH [K/W] 40 30 0,1 20 10 i: 1 2 3 4 ri[K/W]: 0,02368 0,04588 0,23088 0,40182 τi[s]: 0,0005 0,005 0,05 0,2 0,01 0,001 0,01 0,1 t [s] 1 0 10 0 200 400 600 800 t [s] preparedby:CM dateofpublication:2016-02-23 approvedby:AKDA revision:V3.0 7 1000 1200 1400 技术信息/TechnicalInformation IGBT-模块 IGBT-Module DF200R12W1H3F_B11 正向偏压特性Diode-斩波器（典型) forwardcharacteristicofDiode-Chopper(typical) IF=f(VF) 开关损耗Diode-斩波器（典型) switchinglossesDiode-Chopper(typical) Erec=f(IF) RGon=4.7Ω,VCE=600V 60 0,100 Tvj = 25°C Tvj = 125°C Erec, Tvj = 125°C 50 0,075 E [mJ] IF [A] 40 30 0,050 20 0,025 10 0 0,0 0,5 1,0 1,5 2,0 0,000 2,5 0 10 20 VF [V] 开关损耗Diode-斩波器（典型) switchinglossesDiode-Chopper(typical) Erec=f(RG) IF=30A,VCE=600V 30 IF [A] 40 50 60 瞬态热阻抗Diode-斩波器 transientthermalimpedanceDiode-Chopper ZthJH=f(t) 0,100 10 Erec, Tvj = 125°C ZthJH : Diode 0,075 ZthJH [K/W] E [mJ] 1 0,050 0,1 0,025 i: 1 2 3 4 ri[K/W]: 0,118 0,204 0,37 0,258 τi[s]: 0,0005 0,005 0,05 0,2 0,000 0 5 10 15 20 25 RG [Ω] 30 35 40 0,01 0,001 45 preparedby:CM dateofpublication:2016-02-23 approvedby:AKDA revision:V3.0 8 0,01 0,1 t [s] 1 10 技术信息/TechnicalInformation IGBT-模块 IGBT-Module DF200R12W1H3F_B11 负温度系数热敏电阻温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 100000 Rtyp R[Ω] 10000 1000 100 0 20 40 60 80 100 TC [°C] 120 140 160 preparedby:CM dateofpublication:2016-02-23 approvedby:AKDA revision:V3.0 9 技术信息/TechnicalInformation IGBT-模块 IGBT-Module DF200R12W1H3F_B11 接线图/Circuitdiagram J 封装尺寸/Packageoutlines Infineon preparedby:CM dateofpublication:2016-02-23 approvedby:AKDA revision:V3.0 10 技术信息/TechnicalInformation IGBT-模块 IGBT-Module DF200R12W1H3F_B11 Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2015. 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ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorizedrepresentativesofInfineon Technologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswhereafailureoftheproductoranyconsequencesof theusethereofcan reasonablybeexpectedtoresultinpersonalinjury. preparedby:CM dateofpublication:2016-02-23 approvedby:AKDA revision:V3.0 11