PIN diodes MA27P01 Silicon epitaxial planar type Unit: mm 0.27+0.05 –0.02 For high frequency switch 0.13+0.05 –0.02 Symbol Rating Unit VR 60 V Forward current (DC) IF 100 mA Power dissipation * PD 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0 to 0.01 Parameter Reverse voltage (DC) 0.52±0.03 ■ Absolute Maximum Ratings Ta = 25°C 0.15 max. 0.60±0.05 0.15 min. 1 5° 0.15 min. • Low terminal capacitance: Ct ≤ 0.8 pF • Low forward dynamic resistance: rf ≤ 1.0 Ω • Ultraminiature package and surface mounting type 1.0 mm × 0.6 mm (height: 0.52 mm) 5° 1.00±0.05 ■ Features 1.40±0.05 2 1: Anode 2: Cathode SSSMini2-F2 Package Marking Symbol: N Note) *: With a glass epoxy board ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 60 V 100 nA Forward voltage (DC) VF IF = 10 mA 1.0 V Terminal capacitance Ct VR = 1 V, f = 1 MHz 0.8 pF Forward dynamic resistance * rf IF = 10 mA, f = 100 MHz 1.0 Ω Note) *: Measuring instrument; AGILENT MODEL 4291B Publication date: April 2002 SKL00007AED 1 MA27P01 IF V F I R VR 103 Ct VR 103 1 Ta = 150°C 102 Ta = 150°C 1 25°C Terminal capacitance Ct (pF) −20°C 100°C 10 Reverse current IR (nA) Forward current IF (mA) 102 100°C 10 1 10−1 10−2 25°C 10−1 f = 1 MHz Ta = 25°C 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 10−3 0.1 10−2 −4 0 0.2 0.4 0.6 0.8 1.0 1.2 Forward voltage VF (V) 0 10 0 10 20 30 40 rf I F Forward dynamic resistance rf (Ω) 103 f = 100 MHz Ta = 25°C 102 10 1 10−1 0.01 0.1 1 10 Forward current IF (mA) 2 50 Reverse voltage VR (V) SKL00007AED 60 0 10 20 30 40 50 Reverse voltage VR (V) 60 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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