AON6370 30V N-Channel MOSFET General Description Product Summary VDS • Trench Power αMOS Technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Applications ID (at VGS=10V) 30V 47A RDS(ON) (at VGS=10V) < 7.2mΩ RDS(ON) (at VGS=4.5V) < 11.5mΩ 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 PIN1 S Orderable Part Number Package Type Form Minimum Order Quantity AON6370 DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Avalanche Current C Avalanche energy L=0.01mH VDS Spike C 10µs TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: October 2014 23 40 A EAS 8 mJ VSPIKE 36 V 26 Steady-State Steady-State W 10 6.2 W 4 TJ, TSTG Symbol t ≤ 10s A IAS PDSM Junction and Storage Temperature Range A 18 PD TA=25°C V 90 IDSM TA=70°C ±20 29 IDM TA=25°C Continuous Drain Current Units V 47 ID TC=100°C C Maximum 30 RθJA RθJC -55 to 150 Typ 15 40 3.8 www.aosmd.com °C Max 20 50 4.8 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1.4 TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance ±100 nA 2.2 V 5.8 7.2 8.7 10.5 9 11.5 mΩ 1 V 30 A 62 VGS=0V, VDS=15V, f=1MHz f=1MHz µA 1.8 0.71 DYNAMIC PARAMETERS Input Capacitance Ciss Coss V 5 VGS=10V, ID=20A VDS=5V, ID=20A Units 1 TJ=55°C Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ 0.6 mΩ S 840 pF 330 pF 50 pF 1.2 1.8 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 13 Qg(4.5V) Total Gate Charge 6.2 nC 2.5 nC Qgs Gate Source Charge VGS=10V, VDS=15V, ID=20A nC Qgd Gate Drain Charge 3.5 nC Qgs Gate Source Charge 2.5 nC 3.5 nC Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=4.5V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 5.5 ns 3 ns 17 ns 3 ns IF=20A, dI/dt=500A/µs 11 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 18 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: October 2014 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 70 10V 60 70 4.5V 4V VDS=5V 60 50 50 40 40 ID(A) ID (A) 125°C 3.5V 30 30 20 25°C 20 10 10 VGS=3V 0 0 0 1 2 3 4 0 5 1 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 14 1.8 10 Normalized On-Resistance 12 RDS(ON) (mΩ) 2 VGS=4.5V 8 6 4 VGS=10V 1.6 VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=20A 1 2 0.8 0 0 5 10 15 20 25 0 30 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 20 1.0E+02 ID=20A 1.0E+01 16 12 IS (A) RDS(ON) (mΩ) 1.0E+00 125°C 125°C 1.0E-01 1.0E-02 8 25°C 1.0E-03 25°C 4 1.0E-04 0 1.0E-05 2.0 4.0 6.0 8.0 10.0 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.0: October 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=15V ID=20A 1000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 800 600 200 0 3 6 9 12 15 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10µs 15 20 25 30 1ms 10ms 0.0 0.01 Power (W) 100µs DC 0.1 TJ(Max)=150°C TC=25°C 400 10µs RDS(ON) limited 1.0 10 10 500 100.0 10.0 5 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 ID (Amps) Crss 0 0 ZθJC Normalized Transient Thermal Resistance Coss 400 TJ(Max)=150°C TC=25°C 300 200 100 0.1 1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0 0.00001 0.0001 0.001 100 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=4.8°C/W 1 0.1 PD Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: October 2014 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 50 40 Current rating ID(A) Power Dissipation (W) 25 20 15 10 5 30 20 10 0 0 0 25 50 75 100 125 0 150 25 TCASE (°C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=50°C/W 0.1 0.01 PD Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: October 2014 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: October 2014 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6